Surface-potential-based model of reverse short channel effect in submicrometer MOSFETs with nonuniform lateral channel dopingWENSHENG QIANA; XING ZHOU; YUWEN WANG et al.SPIE proceedings series. 2000, pp 243-248, isbn 0-8194-3900-2Conference Paper

Steep Retrograde Indium Channel profiling for high performance nMOSFETsdevice fabricationONG, S. Y; CHOR, E. F; LEUNG, Y. K et al.SPIE proceedings series. 2000, pp 270-278, isbn 0-8194-3900-2Conference Paper

Short channel effect improved strained-Si:C-source/drain PMOSFETsLEE, M. H; CHANG, S. T; MAIKAP, S et al.Applied surface science. 2008, Vol 254, Num 19, pp 6144-6146, issn 0169-4332, 3 p.Conference Paper

A versatile sample injection system for miniaturised isotachophoresis devicesBALDOCK, S. J; FIELDEN, P. R; GODDARD, N. J et al.Microelectronic engineering. 2008, Vol 85, Num 5-6, pp 1440-1442, issn 0167-9317, 3 p.Conference Paper

Gate-extension overlap control by sb tilt implantation : Fundamentals and applications of advanced semiconductor devicesSHIBAHARA, Kentaro; MAEDA, Nobuhide.IEICE transactions on electronics. 2007, Vol 90, Num 5, pp 973-977, issn 0916-8524, 5 p.Article

Threshold voltage model for short channel retrograde doped MOSFETsKRANTI, Abhinav; RASHMI; HALDAR, S et al.SPIE proceedings series. 2002, pp 672-676, isbn 0-8194-4500-2, 2VolConference Paper

Constant-current contour plot for the description of short-channel effects of MOS transistorsCHOONG-KI KIM; GOODWIN-JOHANSSON, S; DINESH SHARMA et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1619-1621, issn 0018-9383Article

Electrical characteristics of 20-nm junctionless Si nanowire transistorsPARK, Chan-Hoon; KO, Myung-Dong; KIM, Ki-Hyun et al.Solid-state electronics. 2012, Vol 73, pp 7-10, issn 0038-1101, 4 p.Article

Short channel effects in polysilicon thin film transistorsFORTUNATO, G; VALLETTA, A; GAUCCI, P et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 221-226, issn 0040-6090, 6 p.Conference Paper

Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidationHAKIM, M. M. A; TAN, L; BUIU, O et al.Solid-state electronics. 2009, Vol 53, Num 7, pp 753-759, issn 0038-1101, 7 p.Conference Paper

An analytical threshold voltage roll-off equation for MOSFET by using effective-doping modelSHIH, Chun-Hsing; CHEN, Yi-Min; CHENHSIN LIEN et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 808-812, issn 0038-1101, 5 p.Article

A quasi-analytical model for nanowire FETs with arbitrary polygonal cross sectionDE MICHIELIS, L; SELMI, L; IONESCU, A. M et al.Solid-state electronics. 2010, Vol 54, Num 9, pp 929-934, issn 0038-1101, 6 p.Conference Paper

An analytical channel thermal noise model for deep-submicron MOSFETs with short channel effectsJEON, Jongwook; JONG DUK LEE; PARK, Byung-Gook et al.Solid-state electronics. 2007, Vol 51, Num 7, pp 1034-1038, issn 0038-1101, 5 p.Article

Scaling effects in dual-bit split-gate nitride memory devicesBREUIL, L; HASPESLAGH, L; LORENZINI, M et al.Solid-state electronics. 2005, Vol 49, Num 11, pp 1862-1866, issn 0038-1101, 5 p.Conference Paper

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in SubthresholdQIAN XIE; JUN XU; YUAN TAUR et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1569-1579, issn 0018-9383, 11 p.Article

Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET bv Effective RadiusLINING ZHANG; LIN LI; JIN HE et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1188-1190, issn 0741-3106, 3 p.Article

A Quasi-Two-Dimensional Compact Drain-Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel EffectsLIME, Francois; INIGUEZ, Benjamin; MOLDOVAN, Oana et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 6, pp 1441-1448, issn 0018-9383, 8 p.Article

Short-channel effect limitations on high-frequency operation of ALGaN/GaN HEMTs for T-Gate devicesJESSEN, Gregg H; FITCH, Robert C; GILLESPIE, James K et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 10, pp 2589-2597, issn 0018-9383, 9 p.Article

Undoped-Body Extremely Thin SOI MOSFETs With Back GatesMAJUMDAR, Amlan; ZHIBIN REN; KOESTER, Steven J et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 10, pp 2270-2276, issn 0018-9383, 7 p.Article

Mobility extraction using RFCV for 80nm MOSFET with 1 nm EOT HfSiON/TiNANDRES, E. San; PANTISANO, L; SEVERI, S et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1878-1881, issn 0167-9317, 4 p.Conference Paper

Fabrication and characterization of nanowire transistors with solid-phase crystallized Poly-Si channelsLIN, Homg-Chih; LEE, Ming-Hsien; SU, Chun-Jung et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 10, pp 2471-2477, issn 0018-9383, 7 p.Article

Partial SOI type isolation for improvement of DRAM cell transistor characteristicsMYOUNG JIN LEE; JUN HEE CHO; SANG DON LEE et al.IEEE electron device letters. 2005, Vol 26, Num 5, pp 332-334, issn 0741-3106, 3 p.Article

Low-Cost Submicrometer Organic Field-Effect TransistorsSCHEINERT, Susanne; PAASCH, Gernot; HÖRSELMANN, Ingo et al.Advances in polymer science (Print). 2010, Vol 223, pp 155-188, issn 0065-3195, 34 p.Article

Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETsBANGSARUNTIP, Sarunya; COHEN, Guy M; MAJUMDAR, Amlan et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 903-905, issn 0741-3106, 3 p.Article

C_∞-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETsHOUK, Yuri; INIGUEZ, Benjamin; FLANDRE, Denis et al.Solid-state electronics. 2006, Vol 50, Num 7-8, pp 1261-1268, issn 0038-1101, 8 p.Article