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Metal silicides with energetic pulses = Herstellung von Metallsiliciden mit Hilfe von EnergiepulsenD'ANNA, E; LEGGIERI, G; LUCHES, A et al.Applied physics. A, Solids and surfaces. 1986, Vol 40, Num 3, pp 183-190, issn 0721-7250Article

Ordering of the Si(553) surface with Pb atomsKOPCIUSZYNSKI, M; LUKASIK, P; ZDYB, R et al.Applied surface science. 2014, Vol 305, pp 139-142, issn 0169-4332, 4 p.Article

Si-based electroluminescence at THz frequenciesLYNCH, S. A; DHILLON, S. S; CULLIS, A. G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 10-12, issn 0921-5107Conference Paper

SiH4 adsorption on SiGe(001)HIROSE, F; SHINOHARA, M; KIMURA, Y et al.Surface science. 2007, Vol 601, Num 4, pp 1123-1128, issn 0039-6028, 6 p.Article

Prediction of amorphous alloy formation by ion beam mixing = Prévision de la formation d'alliage amorphe par mélange de faisceaux ioniquesALONSO, J. A; SIMOZAR, S.Solid state communications. 1983, Vol 48, Num 9, pp 765-767, issn 0038-1098Article

Optimization of the performance of micromorph tandem solar cell a-Si/μc-SiBOUSSEITINE, A. A; REZGUI, B; BENMANSOUR, A et al.Revue des énergies renouvelables. 2010, Vol 13, Num 1, pp 179-186, issn 1112-2242, 8 p.Article

Silicon isotopic fractionation by banana (Musa spp.) grown in a continuous nutrient flow deviceOPFERGELT, S; CARDINAL, D; HENRIET, C et al.Plant and soil. 2006, Vol 285, Num 1-2, pp 333-345, issn 0032-079X, 13 p.Article

Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

Korrosion von grauem Gusseisen in konzentrierter Schwefelsaeure = Corrosion of grey cast iron in concentrated sulphuric acidPLESSEN, H. von; VOGT, H.Zeitschrift für Werkstofftechnik. 1983, Vol 14, Num 5, pp 141-147, issn 0049-8688Article

Cémentation d'un acier ferritomartensitiqueKAMADA, S.-I; HASHIURA, K; NISHIZAWA, T et al.Nippon Kinzoku Gakkaishi (1952). 1983, Vol 47, Num 4, pp 359-364, issn 0021-4876Article

Genotypic variation in silicon concentration of barley grainJIAN FENG MA; HIGASHITANI, Aki; SATO, Kazuhiro et al.Plant and soil. 2003, Vol 249, Num 2, pp 383-387, issn 0032-079X, 5 p.Article

Development of novel architecture and assembly techniques for a detector unit for a silicon micro-vertex detector using the flip-chip bonding methodSAITOH, Y; YAMANAKA, J; TAKEUCHI, H et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 552-556, issn 0018-9499Conference Paper

Signal simulations for double-sided silicon strip detectorsLESLIE, J; SEIDEN, A; UNNO, Y et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 557-562, issn 0018-9499Conference Paper

Enthalpie de mélange des métaux alcalino-terreux avec le fer et le nickelPLETNEVA, E. D; ESIN, YU. O; LITOVSKIJ, V. V et al.Izvestija vysših učebnyh Zavedenij. Černaja Metallurgija. 1985, Num 8, pp 10-12, issn 0368-0797Article

Inoculation alternatives to prevent eutectic carbide formation in ductile ironKRAUSE, W; CHAVES, L.M. jun; SOUZA SANTOS, A.B. de et al.International cast metals journal. 1982, Vol 7, Num 3, pp 22-31, issn 0362-1723Article

Design of an advanced readout chip for silicon strip detectorsZIMMERMAN, T; SARRAJ, M; YAREMA, R et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 736-739, issn 0018-9499Conference Paper

Energy response and filter compensation of pin Si photodiode for personal dosimetry applicationCHIEN-RONG CHEN; SHIANG-HUEI JIANG.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 857-862, issn 0018-9499Conference Paper

Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping processII, Seiichiro; TAKAKI, Yuichi; IKEDA, Ken-Ichi et al.Thin solid films. 2008, Vol 517, Num 1, pp 38-40, issn 0040-6090, 3 p.Conference Paper

Thermal stability and crystallization behaviour of amorphous Zr-M-Si (M=IV-VIII group transition metals) alloysINOUE, A; TAKAHASHI, Y; SURYANARAYANA, C et al.Journal of materials science. 1982, Vol 17, Num 11, pp 3253-3262, issn 0022-2461Article

Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materialsJACOB, A. P; MYRBERE, T; YOUSIF, M. Y. A et al.SPIE proceedings series. 2002, pp 668-671, isbn 0-8194-4500-2, 2VolConference Paper

Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfacesNEUMANN, R; ZHU, J; BRUNNER, K et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 124-126, issn 0040-6090Conference Paper

SIMS quantification of thick Si1―x Gex films (0≤x≤1) using the isotopic comparative method under Ar+ beamPRUDON, G; DUBOIS, C; GAUTIER, B et al.Surface and interface analysis. 2013, Vol 45, Num 1, pp 376-380, issn 0142-2421, 5 p.Conference Paper

C-V characterization of Schottky-and MIS-gate SiGe/Si HEMT structuresONOJIMA, Norio; KASAMATSU, Akihumi; HIROSE, Nobumitsu et al.Applied surface science. 2008, Vol 254, Num 19, pp 6162-6164, issn 0169-4332, 3 p.Conference Paper

Temperature and excitation power dependencies of the photoluminescence of planar and vertically self-organized Si0.70Ge0.30/Si strained superlatticesBOZZO, S; LAZZARI, J.-L; BREMOND, G et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 130-133, issn 0040-6090Conference Paper

Energy dispersive method used for non-specular X-ray scattering from multilayer structureMALAURENT, J. C; DHEZ, P; DUVAL, H et al.Optics communications. 1994, Vol 113, Num 1-3, pp 1-8, issn 0030-4018Article

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