Ordering of the Si(553) surface with Pb atomsKOPCIUSZYNSKI, M; LUKASIK, P; ZDYB, R et al.Applied surface science. 2014, Vol 305, pp 139-142, issn 0169-4332, 4 p.Article

Prediction of amorphous alloy formation by ion beam mixing = Prévision de la formation d'alliage amorphe par mélange de faisceaux ioniquesALONSO, J. A; SIMOZAR, S.Solid state communications. 1983, Vol 48, Num 9, pp 765-767, issn 0038-1098Article

Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

Korrosion von grauem Gusseisen in konzentrierter Schwefelsaeure = Corrosion of grey cast iron in concentrated sulphuric acidPLESSEN, H. von; VOGT, H.Zeitschrift für Werkstofftechnik. 1983, Vol 14, Num 5, pp 141-147, issn 0049-8688Article

Cémentation d'un acier ferritomartensitiqueKAMADA, S.-I; HASHIURA, K; NISHIZAWA, T et al.Nippon Kinzoku Gakkaishi (1952). 1983, Vol 47, Num 4, pp 359-364, issn 0021-4876Article

Enthalpie de mélange des métaux alcalino-terreux avec le fer et le nickelPLETNEVA, E. D; ESIN, YU. O; LITOVSKIJ, V. V et al.Izvestija vysših učebnyh Zavedenij. Černaja Metallurgija. 1985, Num 8, pp 10-12, issn 0368-0797Article

Inoculation alternatives to prevent eutectic carbide formation in ductile ironKRAUSE, W; CHAVES, L.M. jun; SOUZA SANTOS, A.B. de et al.International cast metals journal. 1982, Vol 7, Num 3, pp 22-31, issn 0362-1723Article

Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping processII, Seiichiro; TAKAKI, Yuichi; IKEDA, Ken-Ichi et al.Thin solid films. 2008, Vol 517, Num 1, pp 38-40, issn 0040-6090, 3 p.Conference Paper

Low temperature electrical performance of ultrathin oxide MOS capacitors with p⁺ poly-Si_1-xGe_x and poly-Si gate materialsJACOB, A. P; MYRBERE, T; YOUSIF, M. Y. A et al.SPIE proceedings series. 2002, pp 668-671, isbn 0-8194-4500-2, 2VolConference Paper

Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfacesNEUMANN, R; ZHU, J; BRUNNER, K et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 124-126, issn 0040-6090Conference Paper

Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting StampsVASKO, Stephanie E; KAPETANOVIC, Adnan; TALLA, Vamsi et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2386-2389, issn 1530-6984, 4 p.Article

Silicon-based narrow-bandgap thin-film semiconductor materials : polycrystalline SiGe prepared by reactive thermal CVDJIANJUN ZHANG; SHIMIZU, Kousaku; YING ZHAO et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 4, pp 760-775, issn 1862-6300, 16 p.Conference Paper

A high-power solid-state p⁺-n-n⁺ diode for picosecond-range closing switchingFEI ZHANG; LINA SHI; CHENGFANG LI et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 991-997, issn 0268-1242, 7 p.Article

Photoluminescence characterization of defects in Si and SiGe structuresHIGGS, V; CHIN, F; WANG, X et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 49, pp 10105-10121, issn 0953-8984Article

A study of Si_1-xGe_x/Si quantum-well intermixing by photocurrent spectroscopyCHENG LI; QINQING YANG; YONGHAI CHEN et al.Thin solid films. 2000, Vol 359, Num 2, pp 236-238, issn 0040-6090Article

Fabrication of SiGe rings and holes on Si(001) by flash annealingPERSICHETTI, L; CAPASSO, A; SGARLATA, A et al.Applied surface science. 2013, Vol 283, pp 813-819, issn 0169-4332, 7 p.Article

Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum DotSIMMONS, C. B; THALAKULAM, Madhu; ERIKSSON, M. A et al.Nano letters (Print). 2009, Vol 9, Num 9, pp 3234-3238, issn 1530-6984, 5 p.Article

Fabrication of nanostructures by selective growth of C₆₀ and Si on Si(111) substrateNAKAYA, Masato; NAKAYAMA, Tomonobu; KUWAHARA, Yuji et al.Surface science. 2006, Vol 600, Num 13, pp 2810-2816, issn 0039-6028, 7 p.Article

Silicon-based light emittersKITTLER, M; REICHE, M; ARGUIROV, T et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 4, pp 802-809, issn 1862-6300, 8 p.Conference Paper

Band ordering of the pseudomorphic Si_1-xGe_x/Si heterostructure : the fundamental role of excitonsPENN, C; BAUER, G; SCHÄFFLER, F et al.Thin solid films. 2000, Vol 369, Num 1-2, pp 394-397, issn 0040-6090Conference Paper

Contrast variation effects on neutron diffraction patterns with quasi-periodic structures = Effets des variations de contraste sur les figures de diffraction de neutrons avec des structures quasi-périodiquesJANOT, C; PANNETIER, J; DE BOISSIEU, M et al.Europhysics letters (Print). 1987, Vol 3, Num 9, pp 995-1000, issn 0295-5075Article

Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulatorYOUNGHYUN KIM; TAKENAKA, Mitsuru; OSADA, Takenori et al.Thin solid films. 2014, Vol 557, pp 342-345, issn 0040-6090, 4 p.Conference Paper

Formation of Me-O-Si covalent bonds at the interface between polysilazane and stainless steelAMOUZOU, Dodji; FOURDRINIER, Lionel; MASERI, Fabrizio et al.Applied surface science. 2014, Vol 320, pp 519-523, issn 0169-4332, 5 p.Article

Determination of organic contaminations on Si wafer surfaces by static ToF-SIMS : Improvement of the detection limit with C₆₀+ primary ionsPOLEUNIS, Claude; DELCORTE, Arnaud; BERTRAND, Patrick et al.Applied surface science. 2006, Vol 252, Num 19, pp 7258-7261, issn 0169-4332, 4 p.Conference Paper

Enhancement and stability of photoluminescence from Si nanocrystals embedded in a SiO₂ matrix by H₂-passivationYANLI LI; PEIPEI LIANG; ZHIGAO HU et al.Applied surface science. 2014, Vol 300, pp 178-183, issn 0169-4332, 6 p.Article