Ètude, réalisation, et métrologie de photodétecteurs infrarouge à bande d'impuretés bloquée à base de silicium dope antimoine = Study, realisation, and metrology of infrared blocked impurity band photoconductors based on antimony doped siliconSirmain, Gilles; Leotin, J.1994, 125 p.Thesis

Evaporation of oxygen-bearing species from Si melt and influence of Sb additionXIMING HUANG; TERASHIMA, K; SASAKI, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 1717-1722, issn 0021-4922, 1Article

Evaluation of evaporated species from silicon melt surface during Sb-doped Czochralski silicon crystal growthIZUNOME, K; XINMING HUANG; TERASHIMA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 12B, pp L1635-L1637, issn 0021-4922, 2Article

Occupied and unoccupied surface states on the single-domain Si(100):Sb-2×1 surfaceCRICENTI, A; BERNHOFF, H; REIHL, B et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 10983-10986, issn 0163-1829Article

On the theory of enhanced diffusion in high-temperature antimony-implanted siliconANTONCIK, E.Radiation effects and defects in solids. 1993, Vol 127, Num 1, pp 75-82, issn 1042-0150Article

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk SiVOYLES, P. M; MULLER, D. A; GRAZUL, J. L et al.Nature (London). 2002, Vol 416, Num 6883, pp 826-829, issn 0028-0836Article

Analysis of deposits evaporated from Sb-doped Si meltsHUANG, X; TERASHIMA, K; TOKIZAKI, E et al.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3305-3309, issn 0021-4922, 1Article

Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxyGOSSMANN, H.-J; VREDENBERG, A. M; RAFFERTY, C. S et al.Journal of applied physics. 1993, Vol 74, Num 5, pp 3150-3155, issn 0021-8979Article

On the influence of nitrogen and carbon on the formation of dislocations in heavily doped silicon wafersWINKLER, R; KRAUTBAUER, R; PECH, R et al.Proceedings - Electrochemical Society. 2004, pp 55-59, issn 0161-6374, isbn 1-56677-418-7, 5 p.Conference Paper

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxyLU, X; JIANG, Z; LIU, K et al.Journal of crystal growth. 1996, Vol 169, Num 4, pp 665-671, issn 0022-0248Article

Surface roughening of silicon under ultra-low-energy cesium bombardmentKATAOKA, Y; YAMAZAKI, K; SHIGENO, M et al.Applied surface science. 2003, Vol 203-04, pp 43-47, issn 0169-4332, 5 p.Conference Paper

Contactless measurement of dopant distribution using etch roughnessesKLOESS, G; CRÖLL, A; BENZ, K. W et al.Journal of crystal growth. 1996, Vol 166, Num 1-4, pp 319-324, issn 0022-0248Conference Paper

Antimony δ doping by low energy implantation in molecular-beam epitaxy Si layersGERGAM, E; CHARKI, H; LAZZOUNI, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1793-1797, issn 1071-1023Conference Paper

Reverse temperature dependence of Sb sticking on Si(100) surfacesNAKAGAWA, K; YAMAGUCHI, S; SUGII, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 238-240, issn 0921-5107Conference Paper

Weak anti-localization in δ-doped Sb layer of SiFUJIMOTO, A; KOBORI, H; OHYAMA, T et al.Physica status solidi. B. Basic research. 2002, Vol 230, Num 1, pp 273-276, issn 0370-1972Conference Paper

Crystalline quality of Si epilayers influenced by Sb dopingXUEKUN LU; ZUIMIN JIANG; DAMIN HUANG et al.Journal of crystal growth. 1996, Vol 158, Num 1-2, pp 169-173, issn 0022-0248Article

Diffusion of electrically active Sb atoms in heavily doped silicon : Monte-Carlo simulation with regard to collective phenomenaFEDOTOV, S. A.Physica status solidi. B. Basic research. 1994, Vol 186, Num 2, pp 375-382, issn 0370-1972Article