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Results 1 to 25 of 88950

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High efficiency solar cells using amorphous silicon and amorphous silicon-germanium based alloysYANG, J; ROSS, R; MOHR, R et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1519-1522Conference Paper

β-SiC/Si heterojunction bipolar transistors with high current gainSUGII, T; ITO, T; FURUMURA, Y et al.IEEE electron device letters. 1988, Vol 9, Num 2, pp 87-89, issn 0741-3106Article

Überraschende Reaktionen von Decamethylsilicocen mit π-Systemen des Typs X=C=Y = Surprising reactions of decamethylsilicocene with π systems of the type X=C=YJUTZI, P; MÖHRKE, A.Angewandte Chemie. 1989, Vol 101, Num 6, pp 769-770, issn 0044-8249, 2 p.Article

Heteroepitaxial β-SiC on SiFURUMURA, Y; DOKI, M; MIENO, F et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1255-1260, issn 0013-4651Article

A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxideDIMARIA, D. J; ARIENZO, M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1762-1767, issn 0018-9383, 1Article

Formation of particles in a H2-O2 counterflow diffusion flame doped with SiH4 or SiCl4SHYAN-LUNG CHUNG; MING-SHYONG TSAI; HUOO-DENG LIN et al.Combustion and flame. 1991, Vol 85, Num 1-2, pp 134-142, issn 0010-2180, 9 p.Article

Inelastic electron tunneling spectroscopy of si MIS structures with ultrathin thermal silicon nitride and thermal silicaKOVCHAVTSEV, A. P; KURISHEV, G. L; POSTNIKOV, K. O et al.Physica status solidi. A. Applied research. 1988, Vol 106, Num 2, pp 669-674, issn 0031-8965Article

High-yield laser-synthesis of Si-based nanopowdersYONG LIANG; FEN ZHENG; QUANGANG XIAN et al.Powder technology. 2003, Vol 137, Num 1-2, pp 29-33, issn 0032-5910, 5 p.Article

Oxidation behaviour of ceramic fibres from the Si-C-N-O system and related sub-systemsCHOLLON, G.Journal of the European Ceramic Society. 2000, Vol 20, Num 12, pp 1959-1974, issn 0955-2219Article

Silicon solar cells with antireflection layers of silicon oxide and nitrideABDULLAEV, G. B; BAKIROV, M. YA; SAFAROV, N. A et al.Applied solar energy. 1993, Vol 29, Num 1, pp 76-78, issn 0003-701XArticle

Photoluminescence absorption spectroscopy in a-Si:H and related alloysRADHA RANGANATHAN; GAL, M; TAYLOR, P. C et al.Solar cells. 1988, Vol 24, Num 3-4, pp 257-262, issn 0379-6787Conference Paper

Ball lightning caused by oxidation of nanoparticle networks from normal lightning strikes on soilABRAHAMSON, J; DINNISS, J.Nature (London). 2000, Vol 403, Num 6769, pp 519-521, issn 0028-0836Article

Some new perspectives on oxidation of silicon carbide and silicon nitrideLUTHRA, K. L.Journal of the American Ceramic Society. 1991, Vol 74, Num 5, pp 1095-1103, issn 0002-7820, 9 p.Article

Approximate calculation of inner-shell binding energies and Auger transition energies of solid silicon compoundsZWANZIGER, C; PETROWA, S; REINHOLD, J et al.Physica status solidi. B. Basic research. 1988, Vol 145, Num 2, pp 603-607, issn 0370-1972Article

Entwicklung metallorganisch basierter Keramiken = Development of ceramics via pyrolysis of metal organic polymersGADOW, R; KIENZLE, A.Materialwissenschaft und Werkstofftechnik. 1998, Vol 29, Num 7, pp 371-384, issn 0933-5137Article

Silicon nitride ridge-type optical waveguides fabricated on oxidized silicon by laser direct writingOHTANI, M; HANABUSA, M.Applied optics. 1992, Vol 31, Num 27, pp 5830-5832, issn 0003-6935Article

The influence of different oxides on the formation of Si2N2O from SiO2 and Si3N4BERGMAN, B; HEPING, H.International journal of high technology ceramics. 1990, Vol 6, Num 1, pp 3-8, issn 0267-3762, 6 p.Article

Silicon nitrides and oxynitrides prepared in high-pressure plasmasSVOBODA, P; TARAS, P.Ceramics (Praha). 1991, Vol 35, Num 4, pp 369-378, issn 0862-5468Article

Analysis of valence shell electronic excitations in silicon and its refractory compounds using electron energy loss microspectroscopySKIFF, W. M; CARPENTER, R. W; LIN, S. H et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6328-6335, issn 0021-8979Article

An analysis of thermal stresses in a multilayer thin film printheadJOU, J. H; HSU, L; CHANG, L. S et al.Thin solid films. 1991, Vol 201, Num 2, pp 253-265, issn 0040-6090Article

Inorganic solid-state chemistry with main group element carbodiimidesRIEDEL, R; KROKE, E; GREINER, A et al.Chemistry of materials. 1998, Vol 10, Num 10, pp 2964-2979, issn 0897-4756Article

Challenges for photovoltaic silicon materialsCOLETTI, Gianluca; GORDON, Ivan; SCHUBERT, Martin C et al.Solar energy materials and solar cells. 2014, Vol 130, pp 629-633, issn 0927-0248, 5 p.Conference Paper

Formation and inhibition of polysilicon nucleation on SiO2 for SOI by ELOYAN CHUNLI; LIU MINGDENG; QUAN BAOFU et al.Chinese physics. 1992, Vol 12, Num 2, pp 438-442, issn 0273-429XArticle

From Ψ-MOSFET with silicon on oxide to Ψ-MOSFET with silicon carbide on nitrideRAVARIU, C; RUSU, A; RAVARIU, F et al.Diamond and related materials. 2002, Vol 11, Num 3-6, pp 1268-1271, issn 0925-9635Conference Paper

From cyclotetrasilazane [(CH3)2SiNH]4 via crystalline silicon nitride imide Si2N2NH to α-Si3N4SCHAIBLE, S; RIEDEL, R; WERNER, E et al.Applied organometallic chemistry. 1993, Vol 7, Num 1, pp 53-56, issn 0268-2605Article

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