Covalent functionalization of silicon nitride surfaces by semicarbazide groupCOFFINIER, Yannick; BOUKHERROUB, Rabah; WALLART, Xavier et al.Surface science. 2007, Vol 601, Num 23, pp 5492-5498, issn 0039-6028, 7 p.Article

Application of development-free vapor photolithography in etching silicon nitrideXIAOYIN HONG; SHENGQUAN DUAN; JIANPING LU et al.SPIE proceedings series. 1998, pp 478-486, isbn 0-8194-2776-4Conference Paper

Silicon nitride (Si₃N₄)LATHROP, D.American Ceramic Society bulletin. 1999, Vol 78, Num 6, pp 76-77, issn 0002-7812Article

Silicon nitrideAULT, N. N; YECKLEY, R. L.American Ceramic Society bulletin. 1992, Vol 71, Num 5, issn 0002-7812, p. 816Article

Silicon nitrideAULT, N. N; YECKLEY, R. L.American Ceramic Society bulletin. 1993, Vol 72, Num 6, pp 117-118, issn 0002-7812Article

Deterministic micro asperities on bearings and seals using a modified LIGA processSTEPHENS, L. S; SIRIPURAM, R; HAYDEN, M et al.Journal of engineering for gas turbines and power. 2004, Vol 126, Num 1, pp 147-154, issn 0742-4795, 8 p.Conference Paper

Self-joining of Si₃N₄ using metal interlayersLEMUS-RUIZ, José; LEON-PATINO, Carlos A; DREW, Robin A. L et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2006, Vol 37, Num 1, pp 69-75, issn 1073-5623, 7 p.Conference Paper

Characterization and surface chemistry of uncoated and coated silicon nitride powdersSCHMIDT, H; NABERT, G; ZIEGLER, G et al.Journal of the European Ceramic Society. 1995, Vol 15, Num 7, pp 667-674, issn 0955-2219Article

High-temperature active oxidation of CVD-Si₃N₄ in Ar-O₂ atmosphereNARUSHIMA, T; IGUCHI, Y; GOTO, T et al.Solid state ionics. 1992, Vol 53-56, pp 265-269, issn 0167-2738, 1Conference Paper

Synthesis of silicon nitride fibers from ferrosiliconWARNER, T. E; FRAY, D. J.Journal of materials science letters. 2000, Vol 19, Num 9, pp 733-734, issn 0261-8028Article

Characterization of laser synthesized silicon nitride powders with nanoscale by solid-state NMRYUE, Y; LI, D; YE, C et al.Journal of materials science letters. 1996, Vol 15, Num 8, pp 691-692, issn 0261-8028Article

Multiple nanoscale parallel grooves formed on Si₃N₄/TiC ceramic by femtosecond pulsed laserYOUQIANG XING; JIANXIN DENG; YUNSONG LIAN et al.Applied surface science. 2014, Vol 289, pp 62-71, issn 0169-4332, 10 p.Article

Robust and wear resistant in-situ carbon nanotube/Si₃N₄ nanocomposites with a high loading of nanotubesGONZALEZ-JULIAN, Jesus; DATYE, Amit; WU, Kuang-Hsi et al.Carbon (New York, NY). 2014, Vol 72, pp 338-347, issn 0008-6223, 10 p.Article

Microstructure characterization of hot-pressed β-silicon nitride containing β-Si₃N₄ seedsBO WANG; JUN YANG; RUI GUO et al.Materials characterization. 2009, Vol 60, Num 8, pp 894-899, issn 1044-5803, 6 p.Article

Modified Wagner model for the active-to-passive transition in the oxidation of Si₃N₄JUNJIE WANG; LITONG ZHANG; QINGFENG ZENG et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 11, issn 0022-3727, 115412.1-115412.7Article

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressureMATSUMOTO, M; INAYOSHI, Y; SUEMITSU, M et al.Applied surface science. 2008, Vol 254, Num 19, pp 6208-6210, issn 0169-4332, 3 p.Conference Paper

Microstructure and infiltration kinetics of Si₃N4/Al-Mg composites fabricated by pressureless infiltrationWANG, Shou-Ren; WANG, Ying-Zi; YONG WANG et al.Journal of materials science. 2007, Vol 42, Num 18, pp 7812-7818, issn 0022-2461, 7 p.Article

On combining surface and bulk passivation of SiN_x:H layers for mc-Si solar cellsSOPPE, W. J; HONG, J; WEEBER, A. W et al.sans titre. 2002, pp 158-161, isbn 0-7803-7471-1, 4 p.Conference Paper

Low hydrogen content silicon nitride films grown by chemical vapor deposition using microwave excited hydrogen radicalsYASUI, K; KANEDA, S.Journal of electronic materials. 1991, Vol 20, Num 7, pp 529-533, issn 0361-5235Article

Statistical properties of crushing strength of Si₃N₄ balls for ceramic bearingsICHIKAWA, M; TAKAMATSU, T; OKABE, N et al.Zairyo. 1991, Vol 40, Num 457, pp 1355-1360, issn 0514-5163Article

Ellipsometric characterization of inhomogeneous non-stoichiometric silicon nitride filmsNECAS, David; FRANTA, Daniel; OHLIDAL, Ivan et al.Surface and interface analysis. 2013, Vol 45, Num 7, pp 1188-1192, issn 0142-2421, 5 p.Article

Hard and relaxed a-SiN_xH_y films prepared by PECVD: Structure analysis and formation mechanismXIANGDONG XU; QIONG HE; TAIJUN FAN et al.Applied surface science. 2013, Vol 264, pp 823-831, issn 0169-4332, 9 p.Article

Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon waferHUANG, Bohr-Ran; YANG, Ying-Kan; YANG, Wen-Luh et al.Applied surface science. 2013, Vol 266, pp 245-249, issn 0169-4332, 5 p.Article

The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layersMAJEE, S; CERQUEIRA, M. F; TONDELIER, D et al.Surface & coatings technology. 2013, Vol 235, pp 361-366, issn 0257-8972, 6 p.Article

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVDKSHIRSAGAR, Abhijeet; NYAUPANE, Pradeep; BODAS, Dhananjay et al.Applied surface science. 2011, Vol 257, Num 11, pp 5052-5058, issn 0169-4332, 7 p.Article