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Influence des condition d'élaboration sur la microstructure et les propriétés mécaniques du nitrure de silicium = The influence of processing parameters on the microstructure and mechanical properties of silicon nitrideOlagnon, Christian; Fantozzi, Gilbert.1990, 138 p.Thesis

The preparation and observation by 29Si N.M.R. spectroscopy of simple, acyclic, five-co-ordinate silicon saltsBASSINDALE, A. R; STOUT, T.Journal of the Chemical Society. Chemical communications. 1984, Num 21, pp 1387-1389, issn 0022-4936Article

Interface between transparent electrode and p-layer in a-SiC/a-Si heterojunction solar cellsTAWADA, Y; NISHIMURA, K; TSUGE, K et al.Photovoltaic solar energy conference. 5. 1984, pp 774-777Conference Paper

Photoluminescence absorption spectroscopy in a-Si:H and related alloysRADHA RANGANATHAN; GAL, M; TAYLOR, P. C et al.Solar cells. 1988, Vol 24, Num 3-4, pp 257-262, issn 0379-6787Conference Paper

CHEMICAL VAPOR DEPOSITION IN THE SYSTEMS SILICON-CARBON AND SILICON-CARBON-NITROGEN.NICKL JJ; VON BRAUNMUHL C.1974; J. LESS-COMMON METALS; NETHERL.; DA. 1974; VOL. 37; NO 3; PP. 317-329; ABS. ALLEM.; BIBL. 14 REF.Article

Profilométrie de concentration et état chimique des éléments dans une multicouche Si3N4/SiO2/Si = Element concentration profilometry and chemical state in a Si3N4/SiO2/Si multilayerBALLUTAUD, D; SEVERAC, C.Le Vide (1995). 1996, Vol 52, Num 279, pp 114-115, issn 1266-0167Conference Paper

Study of the response speed of a high gain a-SiC/a-Si junction photosensor and the spectral under bias lightYAMAGUCHI, M; KONDO, M; HAYASHI, K et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1305-1308, issn 0022-3093, 2Conference Paper

Characterization of silicon transducers with Si3N4 sensing surfaces by an AFM and a PAB systemADAMI, M; ALLIATA, D; DEL CARLO, C et al.Sensors and actuators. B, Chemical. 1995, Vol 25, Num 1-3, pp 889-893, issn 0925-4005Conference Paper

Silane nitrile : matrix isolation, adduct with hydrogenMAIER, G; GLATTHAAR, J.Angewandte Chemie. International edition in English. 1994, Vol 33, Num 4, pp 473-475, issn 0570-0833Article

Les Outils de gravure de l'atelier pilote = Etching tools of the pilot workshopBROUQUET, P; BRUN, C; CHOLLET, J.-P et al.1983, 20 p.Report

A two-stage reduction process for silicon productionTADA, M; HIRASAWA, M.High-temperature materials and processes. 2000, Vol 19, Num 3-4, pp 281-297, issn 0334-6455Article

Production of metallurgical silicon of enhanced quality for land-based solar cellsABDYUKHANOV, I. M; ABDYUKHANOV, M. A; KUZ'MIN, Yu. A et al.Metal science and heat treatment. 2000, Vol 42, Num 5-6, pp 246-249, issn 0026-0673Article

Reaktivität von anionischen, fünffach koordinierten Si-Komplexen gegenüber Nucleophilen = Réactivité de complexes du silicium anioniques pentacoordinés envers les nucléophiles = Reactivity of anionic pentacoordinated silicon complexes towards nucleophilesBOUDIN, A; CERVEAU, G; CHUIT, C et al.Angewandte Chemie. 1986, Vol 98, Num 5, pp 472-473, issn 0044-8249Article

PRODUITS REFRACTAIRES DE CARBURE DE SILICIUM A LIANT COMPLEXE CONTENANT DU NITRURE ET OXYNITRURE DE SILICIUMDRAGOMIR C; OPREA G; RUSU E et al.1975; CERC. METALURG.; ROMAN.; DA. 1975; VOL. 16; PP. 665-671; ABS. ANGL. ALLEM. FR. RUSSE; BIBL. 16 REF.Article

Diffusionsschweissen von Silizium = Soudage par diffusion du silicium = Diffusion welding of siliconWIESNER, P; OERTEL, B.ZIS-Mitteilungen. 1986, Vol 28, Num 1, pp 108-114, issn 0044-1465Article

Vibrations locales des isotopes du silicium dans les cristaux de Bi12SiO20BELOUSOV, M. V; LEONOV, E. I; SHCHERBAKOV, A. G et al.Fizika tverdogo tela. 1986, Vol 28, Num 2, pp 598-600, issn 0367-3294Article

Isotope-selective infrared multiple photon decomposition of hexafluorodisilaneKAMIOKA, M; ISHIKAWA, Y.-I; KAETSU, H et al.Journal of physical chemistry (1952). 1986, Vol 90, Num 22, pp 5727-5730, issn 0022-3654Article

Physique de dépôt par plasma et propriétés optiques du silicium amorphe et microcristallin = Physics of deposition by plasma and optical properties of amorphous and microcrystalline siliconFang, Ming; Drevillon, Bernard.1992, 129 p.Thesis

β-SiC/Si heterojunction bipolar transistors with high current gainSUGII, T; ITO, T; FURUMURA, Y et al.IEEE electron device letters. 1988, Vol 9, Num 2, pp 87-89, issn 0741-3106Article

Microtransducer for the concentration of chloride ions in electrolyte solutionsZHUKOVA, T.V; ORLOV, K.V; PODLEPETSKIJ, B.I et al.Zavodskaâ laboratoriâ. 1984, Vol 50, Num 8, pp 18-21, issn 0321-4265Article

Determination of the void fraction in hydrogenated amorphous silicon carbonMENNA, P; MAHAN, A. H; TSU, R et al.Photovoltaic specialists conference. 19. 1987, pp 832-834Conference Paper

A novel synthetic procedure for the preparation of silicon sesquioxide at room temperatureBETTADAPURA SRINIVASAIAH SURESH; DODDABALLAPUR KRISHNAMURTHY PADMA.Journal of the Chemical Society. Dalton transactions. 1984, Num 8, pp 1779-1780, issn 0300-9246Article

Effet de Si dans les alliages d'Al sur leur anodisationHOSHINO, S; IMAMURA, T; MATSUMOTO, S et al.Kinzoku Hyomen Gijutsu. 1984, Vol 35, Num 4, pp 210-212, issn 0026-0614Article

Silicon micro-transducer = Silizium-MiniaturaufnehmerMIDDELHOEK, S; NOORLAG, D.Journal of physics. E. Scientific instruments. 1981, Vol 14, Num 12, pp 1343-1352, issn 0022-3735Article

High efficiency solar cells using amorphous silicon and amorphous silicon-germanium based alloysYANG, J; ROSS, R; MOHR, R et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1519-1522Conference Paper

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