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kw.\*:("Silicium Carbure")

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Thermogravimetry of SiC from rice huskPATEL, M; KARERA, A.Journal of thermal analysis. 1989, Vol 35, Num 7, pp 2535-2537, issn 0368-4466, 3 p.Article

L'EVOLUZIONE DEI REFRATTARI DEL CAMPO DI COLATA = L'EVOLUTION DES REFRACTAIRES DE HALLE DE COULEEREGGIO F; VARALDO G.1980; REFRATTARI; ITA; DA. 1980; VOL. 6; NO 9; PP. 599-608; BIBL. 4 REF.; IDEM ENG FREArticle

Silicon carbide derived from silica sol and sugarMARTIN, H.-P; MÜLLER, E; KNOLL, Y et al.Journal of materials science letters. 1995, Vol 14, Num 9, pp 620-622, issn 0261-8028Article

Der Konstruktive Entwurf von Brennerbauteilen aus SiSiC-Keramik = La conception d'éléments de construction de brûleurs en céramique SiSiC = The constructive design of burner parts made of SiSiC ceramicsHEUSCHMANN, G; WILLMANN, G.Keramische Zeitschrift. 1985, Vol 37, Num 11, pp 641-644, issn 0023-0561Article

Utilisation de carbure de silicium recristallisé pour la fabrication de réfractairesPOLYAK, B. I; VLASOV, A. S; ALEKSANDROVA, T. V et al.Steklo i keramika. 1983, Num 11, pp 16-17, issn 0131-9582Article

Silicon carbide (SiC)LAUGHTON, D.American Ceramic Society bulletin. 1999, Vol 78, Num 6, issn 0002-7812, p. 76Article

Silicon carbide whiskersBRAY, D. J.American Ceramic Society bulletin. 1993, Vol 72, Num 6, pp 116-117, issn 0002-7812Article

Silicon carbideAULT, N. N; CROWE, J. T.American Ceramic Society bulletin. 1991, Vol 70, Num 5, pp 881-882, issn 0002-7812, 2 p.Article

β-SiC/Si heterojunction bipolar transistors with high current gainSUGII, T; ITO, T; FURUMURA, Y et al.IEEE electron device letters. 1988, Vol 9, Num 2, pp 87-89, issn 0741-3106Article

Morphological characterization of SiC materialsCHERMANT, J. L; COSTER, M; MOUSSA, R et al.Journal de physique. Colloques. 1986, Vol 47, Num 1, pp C1.285-C1.289, issn 0449-1947Article

Frittage normal de poudre de β-SiC. Quantités d'additifs bore et carboneTANAKA, H; INAOMATA, Y; TSUKUDA, H et al.Yogyo kyokaishi. 1984, Vol 92, Num 8, pp 461-465, issn 0009-0255Article

R.F.-plasma system for the production of ultrafine, ultrapure silicon carbide powderHOLLABAUGH, C. M; HULL, D. E; NEWKIRK, L. R et al.Journal of materials science. 1983, Vol 18, Num 11, pp 3190-3194, issn 0022-2461Article

The bases of luminescent diagnostic of dislocation structure of SiC crystalsGORBAN, I. S; MISHINOVA, G. N.SPIE proceedings series. 1998, pp 187-196, isbn 0-8194-2808-6Conference Paper

Silicon carbideAULT, N. N; CROWE, J. T.American Ceramic Society bulletin. 1992, Vol 71, Num 5, issn 0002-7812, 814,824 [2 p.]Article

L'usinage par électro-érosion du carbure de silicium lié par réaction (RB-SiC)NAKAMURA, M; KUBO, K; HIRAI, Y et al.Yogyo kyokaishi. 1984, Vol 92, Num 11, pp 648-653, issn 0009-0255Article

Untersuchungsmethoden zur Bestimmung des Alterungszustandes keramisch gebundener SiC-Brennhilfsmittel = Méthodes d'étude de détermination de l'état de dégradation de matériel d'enfournement céramique en SiC = Methods suited for the description of gradually disintegrated of kiln furniture containing SiCKNÜPFER, U; BERGER, I.Sprechsaal (1976). 1983, Vol 116, Num 9, pp 734-739, issn 0341-0676Article

Raman spectral characterization of silicon carbide nuclear fuel coatingsKRAUTWASSER, P; BEGUN, G. M; ANGELINI, P et al.Journal of the American Ceramic Society. 1983, Vol 66, Num 6, pp 424-434, issn 0002-7820Article

Influence des condition d'élaboration sur la microstructure et les propriétés mécaniques du nitrure de silicium = The influence of processing parameters on the microstructure and mechanical properties of silicon nitrideOlagnon, Christian; Fantozzi, Gilbert.1990, 138 p.Thesis

STATIONAERE UND DYNAMISCHE ABSCHEIDUNG VON SILIZIUMKARBID AUF BESCHICHTETEN TEILCHEN = DEPOSITION STATIONNAIRE ET DYNAMIQUE DE CARBURE DE SILICIUM SUR DES PARTICULES COMBUSTIBLES ENROBEESGYARMATI E; NICKEL H.1972; JUEL-900-RW; DTSCH.; DA. 1972; PP. 1-71; ABS. ANGL.; BIBL. 3 P. 1/2Report

BREVET 2.159.437 (B) (7239799). A 9 NOVEMBRE 1972. PROCEDE DE REALISATION D'OBJETS EN CARBURE DE SILICIUMsdPatent

MEASUREMENTS OF SPECTRAL AND TOTAL EMITTANCE OF REINFORCED CARBON-CARBON. = MESURE DE L'EMITTANCE SPECTRALE ET TOTALE DU COMPOSITE CARBONE-CARBONE RENFORCEGRINBERG IM; LUCE RG; MCGINNIS FK et al.1976; IN: AEROSP. SCI. MEET. 14. PAP.; WASHINGTON, D.C.; 1976; NEW YORK; AM. INST. AERONAUT. ASTRONAUT.; DA. 1976; VOL. 119; PP. 1-7; BIBL. 6 REF.Conference Paper

ROLE DU CARBURE DE SILICIUM DANS LES REFRACTAIRES AL2O3-SIC-CTAKAHASHI T; KITANI F; MIYASHITA Y et al.1983; YOGYO-KYOKAI-SHI. (JOURNAL OF THE CERAMIC SOCIETY OF JAPAN); ISSN 0009-0255; JPN; DA. 1983; VOL. 91; NO 4; PP. 157-164; ABS. ENG; BIBL. 3 REF.Article

Directly synthesized polycarbosilanes as binding agents for pressurelessly sintered SiC-materialsSARTORI, P; HABEL, W; VAN AEFFERDEN, B et al.Precursors for CVD and MOCD. European journal of solid state and inorganic chemistry. 1992, Vol 29, pp 127-146, SUPBook Chapter

Highly polished, grazing incidence mirrors developed for synchrotron radiation beam lines at Stanford synchrotron radiation laboratoryTISELL, K. G; BERGLIN, E. J; FUCHS, B. A et al.Optical engineering (Bellingham. Print). 1988, Vol 27, Num 11, pp 985-993, issn 0091-3286Article

Frittage sans pression de poudre de SiC ultrafine produite par une méthode d'évaporation de gazOHKOHCHI, M; ANDO, Y.Yogyo kyokaishi. 1986, Vol 94, Num 1, pp 26-34, issn 0009-0255Article

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