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kw.\*:("Silicium IV Oxyde")

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Plasma etching of SiO2 films for contact holes in VLSIALBIN, S.GEC journal of research. 1983, Vol 1, Num 3, pp 178-183, issn 0264-9187Article

SOLUTION OF LAUE BACK REFLECTION PATTERNS OF SAPPHIRE CRYSTALS USING A COMPUTER TECHNIQUE.ANAZIA C; CHANG OU LEE; JERNER RC et al.1975; METALLURG. TRANS. A; U.S.A.; DA. 1975; VOL. 6; NO 9; PP. 1751-1753; BIBL. 7 REF.Article

ETUDE DE LA DISTRIBUTION DES IMPURETES DANS LES COUCHES SUPERFICIELLES DES TUBES DE VERRE DE QUARTZLEKO VK; KOMAROVA LA.1974; OPT.-MEKH. PROMYSL.; S.S.S.R.; DA. 1974; NO 6; PP. 33-35; BIBL. 2 REF.Article

MEASUREMENT OF THE ORDER PARAMETER OF ALPHA -QUARTZ BY SECOND-HARMONIC GENERATION OF LIGHT.BACHHEIMER JP; DOLINO G.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 8; PP. 3195-3205; BIBL. 51 REF.Article

COMPACTION OF ION-IMPLANTED FUSED SILICA.EERNISSE EP.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 167-174; BIBL. 21 REF.Article

MODIFIZIERUNG VON SIO2-OBERFLAECHEN MIT HILFE VON PLASMEN. I. EPR-SPEKTROSKOPISCHE UNTERSUCHUNG DER DEFEKTZENTREN UND DER EINFLUSS DES PLASMATRAEGERGASES AUF DEREN BILDUNG. = MODIFICATION DE SURFACES DE SIO2 A L'AIDE DE PLASMAS. 1ERE PARTIE. ETUDE PAR SPECTROSCOPIE RPE DES CENTRES DE DEFAUTS ET DE L'INFLUENCE DU GAZ PORTEUR DE PLASMA SUR LEUR FORMATIONMEYER K; TILLER HJ; WELZ E et al.1974; Z. CHEM.; DTSCH.; DA. 1974; VOL. 14; NO 4; PP. 146-150; BIBL. 47 REF.Article

LIFT-OFF PATTERNING OF SPUTTERED SIO2 FILMSSERIKAWA T; YACHI T.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 918-919; BIBL. 7 REF.Article

LOCAL DIFFRACTION OF NEUTRONS BY VIBRATING QUARTZ SINGLE CRYSTALS.CHALUPA B; MICHALEC R; CECH J et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 2; PP. 541-548; ABS. ALLEM.; BIBL. 10 REF.Article

ETUDE DE LA COMPOSITION ET DES PROPRIETES DE SIO2 PRODUIT PAR DECOMPOSITION HYDROLYTIQUE DU TETRAETHOXYSILANEBOCHKANS P YA; GRIGALE DA; KALNYNYA RP et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 2; PP. 18-23; ABS. ANGL.; BIBL. 16 REF.Article

CALCULS PRELIMINAIRES AU SCIAGE D'UN CRISTAL.HECHMATI MEHR NAZ.1974; ; S.L.; DA. 1974; PP. (46P.); BIBL. 6 REF.; (THESE DOCT. CHIM., MENTION CHIM. STRUCT.; BESANCON)Thesis

SOUND VELOCITY IN COLLOIDAL SIO2 SUSPENSIONSYOUNGER PR; ZIMMERMAN GO; CHASE CE et al.1973; J. CHEM. PHYS.; U.S.A.; DA. 1973; VOL. 58; NO 7; PP. 2675-2678; BIBL. 15 REF.Serial Issue

Reactive ion etching of silicon with Cl2/Ar(1)POGGE, H. B; BONDUR, J. A; BURKHARDT, P. J et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1592-1597, issn 0013-4651Article

RIE OF SIO2 IN DOPED AND UNDOPED FLUOROCARBON PLASMASNORSTROEM H; BUCHTA R; RUNOVC F et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 737-745; BIBL. 29 REF.Article

CATALYZED CRYSTALLIZATION IN SIO2 THIN FILMS.ALESSANDRINI EI; CAMPBELL DR.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 8; PP. 1115-1118; BIBL. 5 REF.Article

CHARACTERIZATION OF REAL SURFACES OF VITREOUS SILICA BY ELLIPSOMETRY.VEDAM K; MALIN M.1974; MATER. RES. BULL.; U.S.A.; DA. 1974; VOL. 9; NO 11; PP. 1503-1509; BIBL. 12 REF.Article

PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article

BESTIMMUNG DER PINHOLE-DICHTE VON ISOLATORSCHICHTEN DURCH CHEMISCHES AETZEN (I). DAS SYSTEM SILIZIUM-SILIZIUMDIOXID. = DETERMINATION PAR ATTAQUE CHIMIQUE DE LA DENSITE DES "TROUS D'EPINGLES" DANS DES COUCHES ISOLANTES (I). LE SYSTEME SILICIUM-DIOXYDE DE SILICIUMTHIEMT K; KALTOFEN R.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 3; PP. 305-312; ABS. ANGL.; BIBL. 17 REF.Article

DEPOT DE COUCHES MINCES D'OXYDES PAR EVAPORATION SOUS IMPACT IONIQUE DANS UNE DECHARGE INDUITE.HECQ M; VAN CAKENBERGHE J; GORINAS G et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 33; NO 1; PP. 65-87; ABS. ANGL.; BIBL. 34 REF.Article

IMPLANTED ARSENIC AND BORON CONCENTRATION PROFILES IN SIO2 LAYERS.SCHIMKO R; RICHTER CE; ROGGE K et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 87-93; ABS. ALLEM.; BIBL. 16 REF.Article

ETUDE PHYSICOCHIMIQUE DES COUCHES OBTENUES PAR HYDROLYSE DE TETRAETHOXYSILANESTRIZHKOV BV; PELIPAS VP; NISHANOV DN et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 9; PP. 1641-1644; BIBL. 10 REF.Article

DAUPHINE TWIN OBSERVATION IN QUARTZ USING PIEZO OR ELECTRO-OPTIC EFFECTS.DOLINO G.1975; REV. PHYS. APPL.; FR.; DA. 1975; VOL. 10; NO 6; PP. 433-436; ABS. FR.; BIBL. 12 REF.Article

IRRADIATION DE CERTAINS MATERIAUX AU REACTEURGISMATULLIN YU R; OSTROUMOV VI.1975; TRUDY L.P.I., LENINGRAD; S.S.S.R.; DA. 1975; NO 341; PP. 122-127; BIBL. 26 REF.Article

A method for eliminating hillocks in integrated-circuit metallizationsCADIEN, K. C; LOSEE, D. L.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 82-83Article

THEORETICAL STUDY OF SIO2-COOPER DL; WILSON S.1981; MOL. PHYS.; ISSN 0026-8976; GBR; DA. 1981; VOL. 44; NO 4; PP. 799-802; BIBL. 11 REF.Article

PARAMETER VARIATION IN LOW-QUARTZ BETWEEN 94 AND 298 KLE PAGE Y; CALVERT LD; GABE EJ et al.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 7; PP. 721-725; BIBL. 10 REF.Article

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