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Aerosol jet etchingCHEN, Y. L; BROCK, J. R; TRACHTENBERG, I et al.Aerosol science and technology. 1990, Vol 12, Num 4, pp 842-855, issn 0278-6826, 14 p.Article

Structure of glasses in the systems Mgi2SiO4-Fe2SiO4-Fe2SiO4, Mg2SiO4-CaMgSiO4, and Mn2SiO4-CaMnSiO4COONEY, T. F; SHARMA, S. K.Journal of non-crystalline solids. 1990, Vol 122, Num 1, pp 10-32, issn 0022-3093Article

Measurement of the displacement distribution by speckle photography using a BSO crystalNAKAGAWA, K; TAKATSUJI, T; MINEMOTO, T et al.Optics communications. 1990, Vol 76, Num 3-4, pp 206-212, issn 0030-4018, 7 p.Article

On the charge storage and decay mechanism in silicon dioxide electretsOLTHUIS, W; BERGVELD, P.IEEE transactions on electrical insulation. 1992, Vol 27, Num 4, pp 691-697, issn 0018-9367Conference Paper

Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesJENN-GWO HWU; JIN-BOR CHUANG; SHYH-LIANG FU et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 377-383, issn 0721-7250Article

Evidence for resonant tunneling of electrons via sodium ions in silicon dioxideKOCH, R. H; HARTSTEIN, A.Physical review letters. 1985, Vol 54, Num 16, pp 1848-1851, issn 0031-9007Article

Silicon-dioxide electret transducerHOHM, D; GERHARD-MULTHAUPT, R.The Journal of the Acoustical Society of America. 1984, Vol 75, Num 4, pp 1297-1298, issn 0001-4966Article

Thermal fixing of holographic gratings in Bi12SiO20ARIZMENDI, L.Journal of applied physics. 1989, Vol 65, Num 2, pp 423-427, issn 0021-8979Article

Mécanisme de formation de donneurs thermiques dans le silicium contenant de l'oxygèneBATAVIN, V. V; KOCHINA, EH. A; SAL'NIK, Z. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 692-696, issn 0015-3222Article

A novel synthetic procedure for the preparation of silicon sesquioxide at room temperatureBETTADAPURA SRINIVASAIAH SURESH; DODDABALLAPUR KRISHNAMURTHY PADMA.Journal of the Chemical Society. Dalton transactions. 1984, Num 8, pp 1779-1780, issn 0300-9246Article

A multilevel model for astronomical SiO masersELITZUR, M; WATSON, W. D; WESTERN, L. R et al.The Astrophysical journal. 1983, Vol 274, Num 1, pp 210-213, issn 0004-637XArticle

Angle-independent plasmonic infrared band-stop reflective filter based on the Ag/SiO2/Ag T-shaped arrayCHENG, Cheng-Wen; MOHAMMED NADHIM ABBAS; CHANG, Zi-Chang et al.Optics letters. 2011, Vol 36, Num 8, pp 1440-1442, issn 0146-9592, 3 p.Article

Cluster model and charge transfer in a strong metal-support interaction (SMSI) stateVISWANATHAN, B; TANAKA, K; TOYOSHIMA, I et al.Langmuir. 1986, Vol 2, Num 1, pp 113-116, issn 0743-7463Article

Noise measurements in thin film SiO diodesNGUYEN, T. P; MINN, S.Solid state communications. 1985, Vol 53, Num 4, pp 335-337, issn 0038-1098Article

Some electrical properties of thin film sandwich assemblies of SiO/V2O5AL-RAMADHAN, F. A. S; HOGARTH, C. A.Journal of materials science. 1984, Vol 19, Num 5, pp 1718-1725, issn 0022-2461Article

The solid solution in mulliteCHAUDHURI, S. P.Journal of the Canadian Ceramic Society. 1989, Vol 58, Num 1, pp 61-76, issn 0068-8444Article

RAMAN SPECTROSCOPIC STUDY ON THE STRUCTURE OF SILICATE SLAG = ETUDE PAR SPECTROSCOPIE RAMAN DE LA STRUCTURE DE SCORIES DE SILICATESKASHIO S; IGUCHI Y; GOTO T et al.1980; TRANS. IRON STEEL INST. JAP.; JPN; DA. 1980; VOL. 20; NO 4; PP. 251-253; BIBL. 14 REF.Article

Influence of two-level planar interconnection processes using bias-sputtered SiO2 for MOSFETsTSUNEKAWA, S; KUME, H; HOMMA, Y et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 9, pp 2632-2637, issn 0013-4651, 6 p.Article

Hole trapping and breakdown in thin SiO2CHEN, I. C; HOLLAND, S; HU, C et al.IEEE electron device letters. 1986, Vol 7, Num 3, pp 164-167, issn 0741-3106Article

Pulsed high rate plasma etching with variable Si/SiO2 selectivity and variable Si etch profilesBOSWELL, R. W; HENRY, D.Applied physics letters. 1985, Vol 47, Num 10, pp 1095-1097, issn 0003-6951Article

Magnetoresistive switching of small permalloy sandwich structuresBERCHIER, J.-L; SOLT, K; ZAJC, T et al.Journal of applied physics. 1984, Vol 55, Num 2, pp 487-492, issn 0021-8979Article

Effect of compositional variation on optical and structure properties of europium-doped SiO2—HrO2 glassesCHAOFENG ZHU; MONTEIL, André; EI-JOUAD, Mohamed et al.Optics letters. 2009, Vol 34, Num 23, pp 3749-3751, issn 0146-9592, 3 p.Article

Realization of solar cells based on silicon/oxide junctionsCAMPET, G; SUN, Z. W; KEOU, P et al.Active and passive electronic components. 1990, Vol 14, Num 2, pp 47-52, issn 0882-7516, 6 p.Article

A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxideDIMARIA, D. J; ARIENZO, M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1762-1767, issn 0018-9383, 1Article

The voltage-current characteristics of thin MIM sandwichwes with SiOx/Bi2O3 as the insulatorARSHAK, K. I; GLOT, A; HOGARTH, C. A et al.Journal of materials science. 1985, Vol 20, Num 10, pp 3590-3596, issn 0022-2461Article

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