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Contribution à l'étude de matériaux du système Si, Ge, C et à leur élaboration par dépôt chimique en phase vapeur à partir de précurseurs organosiliciés et organogermaniés = Contribution to the study of materials Si, Ge, C and to their elaboration by chemical vapour deposition from organosilicon and organogermanium precursorsAMJOUD, M'Barek; MORANCHO, Roland.1992, 125 p.Thesis

Synthèses et applications catalytiques de carbures à haute surface spécifique dopés = Synthesis and catalytic applications of doped high specifique surface carbidesMarin, Sophie; Ledoux, Marc Jacques.1991, 180 p.Thesis

Synthesis of submicrometer-sized β-SiC particles from the precursors composed of exfoliated graphite and siliconeKONNO, Hidetaka; KINOMURA, Takuya; HABAZAKI, Hiroki et al.Carbon (New York, NY). 2004, Vol 42, Num 4, pp 737-744, issn 0008-6223, 8 p.Article

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Formation of interfacial reaction products in SCS-6 SiC/Ti₂AlNb compositesYANG, Y. Q; ZHU, Y; MA, Z. J et al.Scripta materialia. 2004, Vol 51, Num 5, pp 385-389, issn 1359-6462, 5 p.Article

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Analysis of the response of silicon carbide subjected to shock-reshock and shock-release plate-impact experimentsHOLMQUIST, T. J.Journal de physique. IV. 2006, Vol 134, pp 339-344, issn 1155-4339, 6 p.Conference Paper

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Preparation of silicon carbide films on molybdenum by R.F. reactive ion plating = Préparation de films de carbure de silicium sur du molybdène par revêtement ionique réactif par radio fréquenceFUKUTOMI, M; KITAJIMA, M; OKADA, M et al.Transactions of National Research Institute for Metals. 1984, Vol 26, Num 4, pp 263-269, issn 0453-9222Article

A model for the oxidation of carbon silicon carbide composite structuresSULLIVAN, Roy M.Carbon (New York, NY). 2005, Vol 43, Num 2, pp 275-285, issn 0008-6223, 11 p.Article