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Results 1 to 25 of 22159

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Effect of oxygen partial pressure on oxidation rate of Si-C-O fiberSHIMOO, T; TOYODA, F; OKAMURA, K et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1998, Vol 106, Num 5, pp 447-451, issn 0914-5400Article

Thermal behavior of (Organosilicon) polymer-derived ceramics. V: Main facts and trendsMONTHIOUX, M; DELVERDIER, O.Journal of the European Ceramic Society. 1996, Vol 16, Num 7, pp 721-737, issn 0955-2219Article

Entwicklung metallorganisch basierter Keramiken = Development of ceramics via pyrolysis of metal organic polymersGADOW, R; KIENZLE, A.Materialwissenschaft und Werkstofftechnik. 1998, Vol 29, Num 7, pp 371-384, issn 0933-5137Article

Réfractaire amélioré au carbure de siliciumBERDICHEVSKIJ, I. M; TELESHMAN, N. I; KRESIN, O. M et al.Steklo i keramika. 1984, Num 1, pp 22-23, issn 0131-9582Article

Thermogravimetry of SiC from rice huskPATEL, M; KARERA, A.Journal of thermal analysis. 1989, Vol 35, Num 7, pp 2535-2537, issn 0368-4466, 3 p.Article

Electrical gating and rectification in graphene three-terminal junctionsHÄNDEL, B; HÄHNLEIN, B; GÖCKERITZ, R et al.Applied surface science. 2014, Vol 291, pp 87-92, issn 0169-4332, 6 p.Conference Paper

Playing tetris at the nanoscaleCICOIRA, Fabio; ROSEI, Federico.Surface science. 2006, Vol 600, Num 1, pp 1-5, issn 0039-6028, 5 p.Article

High-yield laser-synthesis of Si-based nanopowdersYONG LIANG; FEN ZHENG; QUANGANG XIAN et al.Powder technology. 2003, Vol 137, Num 1-2, pp 29-33, issn 0032-5910, 5 p.Article

Microstructural and microchemical characterization of silicon carbide and silicon carbonitride ceramic fibers produced from polymer precursorsRACHMAN CHAIM; HEUER, A. H; CHEN, R. T et al.Journal of the American Ceramic Society. 1988, Vol 71, Num 11, pp 960-969, issn 0002-7820Article

Silicon carbide from sludged silicon powder = Siliziumkarbid aus SiliziumpulverschlammCHOI, Mi-Ryoung; KIM, Yeong-Cheol; CHANG, Young-Chul et al.Praktische Metallographie. 2006, Vol 43, Num 3, pp 120-126, issn 0032-678X, 7 p.Article

Evidence for a silicon oxycarbide phase in the Nicalon silicon carbide fibrePORTE, L; SARTRE, A.Journal of materials science. 1989, Vol 24, Num 1, pp 271-275, issn 0022-2461Article

Oxidation behaviour of ceramic fibres from the Si-C-N-O system and related sub-systemsCHOLLON, G.Journal of the European Ceramic Society. 2000, Vol 20, Num 12, pp 1959-1974, issn 0955-2219Article

Ceramic fibres from polymer precursorsOKAMURA, K.Composites. 1987, Vol 18, Num 2, pp 107-120, issn 0010-4361Article

Highly permeable porous silicon carbide support tubes for the preparation of nanoporous inorganic membranesWANGXUE DENG; XINHAI YU; SAHIMI, Muhammad et al.Journal of membrane science (Print). 2014, Vol 451, pp 192-204, issn 0376-7388, 13 p.Article

Laser synthesized nanopowders for polymer-based compositesGAVRILA-FLORESCU, Lavinia; SANDU, Ion; STAN, Ana et al.Applied surface science. 2012, Vol 258, Num 23, pp 9260-9262, issn 0169-4332, 3 p.Conference Paper

Thin graphite overlayers: Graphene and alkali metal intercalationALGDAL, J; BALASUBRAMANIAN, T; BREITHOLTZ, M et al.Surface science. 2007, Vol 601, Num 4, pp 1167-1175, issn 0039-6028, 9 p.Article

Selective effect of ion/surface interaction in low frequency pacvd of SiC:H films: Part B. Microstructural studySOUM GLAUDE, A; THOMAS, L; TOMASELLA, E et al.Surface & coatings technology. 2006, Vol 201, Num 1-2, pp 174-181, issn 0257-8972, 8 p.Article

Electronic structure of oxidized SiC(0001) studied by inverse photoemission spectroscopyOSTENDORF, R; WULFF, K; BENESCH, C et al.Surface science. 2006, Vol 600, Num 18, pp 3839-3844, issn 0039-6028, 6 p.Conference Paper

Effects of different laser sources and doping methods used to dope silicon carbideTIAN, Z; SALAMA, I. A; QUICK, N. R et al.Acta materialia. 2005, Vol 53, Num 9, pp 2835-2844, issn 1359-6454, 10 p.Article

Silicon carbide detector for laser-generated plasma radiationBERTUCCIO, Giuseppe; PUGLISI, Donatella; TORRISI, Lorenzo et al.Applied surface science. 2013, Vol 272, pp 128-131, issn 0169-4332, 4 p.Article

Structure of SiC coatings from polycarbosilane on graphite for fuel element matrix of high temperature gas-cooled reactorFU ZHIQIANG; TANG CHUNHE; LIANG TONGXIANG et al.Surface & coatings technology. 2006, Vol 200, Num 12-13, pp 3950-3954, issn 0257-8972, 5 p.Article

Structural and electronic properties of graphite layers grown on SiC(0001)SEYLLER, Th; EMTSEV, K. V; VARYKHALOV, A et al.Surface science. 2006, Vol 600, Num 18, pp 3906-3911, issn 0039-6028, 6 p.Conference Paper

Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diodePEREZ, R; MESTRES, N; JORDA, X et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 1231-1235, issn 0925-9635, 5 p.Conference Paper

Synthesis and oxidation behavior of Al4SiC4―Al―Si compositesCHAO YU; HONGXI ZHU; WENJIE YUAN et al.International journal of materials research. 2014, Vol 105, Num 8, pp 793-796, issn 1862-5282, 4 p.Article

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilaneNARITA, Yuzuru; HARASHIMA, Masayuki; YASUI, Kanji et al.Applied surface science. 2006, Vol 252, Num 10, pp 3460-3465, issn 0169-4332, 6 p.Article

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