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kw.\*:("Silicon IV Oxides")

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Results 1 to 25 of 1015

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RF annealing of defects induced in SiO2 by oxygen plasmaSZEKERES, A; ALEXANDROVA, S.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 721-724, issn 0031-8965Article

LIFT-OFF PATTERNING OF SPUTTERED SIO2 FILMSSERIKAWA T; YACHI T.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 918-919; BIBL. 7 REF.Article

Plasma etching of SiO2 films for contact holes in VLSIALBIN, S.GEC journal of research. 1983, Vol 1, Num 3, pp 178-183, issn 0264-9187Article

Etude des transformations structurales dans les silices renfermant du titaneSUSHKO, R. V; GETTE, A. V; MIRONYUK, I. F et al.Žurnal prikladnoj himii. 1983, Vol 56, Num 6, pp 1230-1234, issn 0044-4618Article

RIE OF SIO2 IN DOPED AND UNDOPED FLUOROCARBON PLASMASNORSTROEM H; BUCHTA R; RUNOVC F et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 737-745; BIBL. 29 REF.Article

PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURESSMOLINSKY G; MAYER TM; TRUESDALE EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1770-1772; BIBL. 6 REF.Article

OBSERVATIONS OF CMFN RADICALS IN REACTIVE ION BEAMETCHINGHAYASHI T; MIYAMURA M; KOMIYA S et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PART. 2; PP. L755-L757; BIBL. 19 REF.Article

THEORETICAL STUDY OF SIO2-COOPER DL; WILSON S.1981; MOL. PHYS.; ISSN 0026-8976; GBR; DA. 1981; VOL. 44; NO 4; PP. 799-802; BIBL. 11 REF.Article

Reactive ion etching of silicon with Cl2/Ar(1)POGGE, H. B; BONDUR, J. A; BURKHARDT, P. J et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 7, pp 1592-1597, issn 0013-4651Article

Méthode de préparation à basse température du dioxyde de silicium anhydreBUTSKIJ, V. D; ZORYA, L. N; LAZAREV, V. B et al.Žurnal neorganičeskoj himii. 1989, Vol 34, Num 9, pp 2194-2198, issn 0044-457XArticle

Ion-induced etching of SiO2: the influence of mixing and lattice damageWINTERS, H. F.Journal of applied physics. 1988, Vol 64, Num 5, pp 2805-2808, issn 0021-8979Article

Control of silicon dioxide properties by RF sputteringLEE, M. K; CHANG, C. Y; TZENG, J. S et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 3, pp 658-659, issn 0013-4651Article

Dry Liftoff method by sublimation of molybdenum oxideYAMAUCHI, N; YACHI, T; WADA, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 9, pp L595-L596, issn 0021-4922Article

A method for eliminating hillocks in integrated-circuit metallizationsCADIEN, K. C; LOSEE, D. L.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 82-83Article

Kinetics and mechanism of silicon dioxide deposition through thermal pyrolysis of tetraethoxysilaneRAUPP, G. B; SHEMANSKY, F. A; CALE, T. S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2422-2430, issn 1071-1023Conference Paper

Ätzen von (100)-Silicium mit KOH zur Herstellung freitragender SiO2-Strukturen für mikromechanische Anwendungen = Corrosion de silicium-(100) avec KOH en vue d'élaborer des cloisonnages de SiO2 pour des usages en micromécanique = Corrosion of (100)-silicon with KOH for the production of SiO2 framework for micromechanical utilizationsLEYFFER, W.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1988, Vol 30, Num 3, pp 363-370, issn 0372-7610Article

Mechanochemical racemization of L-leucineIKEKAWA, A; HAYAKAWA, S.Bulletin of the Chemical Society of Japan. 1984, Vol 57, Num 3, pp 889-890, issn 0009-2673Article

DEPOSITION AND PROPERTIES OF RF REACTIVELY SPUTTERED SIO2 LAYERSKORTLANDT J; OOSTING L.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 10; PP. 153-159; BIBL. 14 REF.Article

FACTORS AFFECTING PROBABILITY DISTRIBUTION AND YIELD OF SILICON DIOXIDE DEFECTSZAKZOUK AKM.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 96-102; BIBL. 12 REF.Article

SELECTIVE REACTIVE ION BEAM ETCHING OF SIO2 OVER POLYCRYSTALLINE SIHEATH BA.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 396-402; BIBL. 16 REF.Article

ON THE PINHOLE MODEL FOR MIS DIODESFONASH SJ; ASHOK S.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1075-1076; BIBL. 19 REF.Article

REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATESHORWITZ CM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1320-1323; BIBL. 10 REF.Article

A REVISED ANALYSIS OF DRY OXIDATION OF SILICONFARGEIX A; GHIBAUDO G; KAMARINOS G et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2878-2880; BIBL. 12 REF.Article

PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2EPHRATH LM; PETRILLO EJ.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2282-2287; BIBL. 6 REF.Article

SDW MOSFET'S IN LSI ANALOG CIRCUIT DESIGNHAMDY EZ; ELMASRY MI.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 1; PP. 2-8; BIBL. 7 REF.Article

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