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Results 1 to 25 of 11810

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Joining of silicon nitride using coating technologyTATLI, Z; THOMPSON, D. P.Surface & coatings technology. 2006, Vol 200, Num 9, pp 3078-3083, issn 0257-8972, 6 p.Article

Application of development-free vapor photolithography in etching silicon nitrideXIAOYIN HONG; SHENGQUAN DUAN; JIANPING LU et al.SPIE proceedings series. 1998, pp 478-486, isbn 0-8194-2776-4Conference Paper

The variation of hardness in Lucas Syalon ceramicsLUMBY, R. J.Journal of materials science letters. 1983, Vol 2, Num 7, pp 345-346, issn 0261-8028Article

A silicon-29 MAS-NMR study of α-silicon nitride and amorphous silicon oxynitride fibresCHOLLON, G; HANY, R; VOGT, U et al.Journal of the European Ceramic Society. 1998, Vol 18, Num 5, pp 535-541, issn 0955-2219Article

Electron heating in silicon nitride and silicon oxynitride filmsDIMARIA, D. J; ABERNATHEY, J. R.Journal of applied physics. 1986, Vol 60, Num 5, pp 1727-1729, issn 0021-8979Article

Si3N4 and Si2N2O for high performance radomesBARTA, J; MANELA, M; FISCHER, R et al.Materials science and engineering. 1985, Vol 71, Num 1-2, pp 265-272, issn 0025-5416Conference Paper

Low temperature plasma enhanced chemical vapor deposition of silicon nitride and oxynitride layersNALLAPATI, G; AJMERA, P. K.SPIE proceedings series. 1998, pp 573-579, isbn 0-8194-2756-X, 2VolConference Paper

Thermodynamic calculations of heterogeneous equilibria in the system Si-Fe-N-O and Si-Fe-NRICHTER, H.-J; HERRMANN, M.Journal of materials science letters. 1991, Vol 10, Num 13, pp 783-785, issn 0261-8028, 3 p.Article

Effect of Si-H and N-H bonds on electrical properties of plasma deposited silicon nitride and oxynitride filmsSON VAN NGUYER.Journal of electronic materials. 1987, Vol 16, Num 4, pp 275-281, issn 0361-5235Article

The role of additives in the pressureless sintering of nitrogen ceramics for engine applicationsHAMPSHIRE, S.Metals forum. 1984, Vol 7, Num 3, pp 162-170, issn 0160-7952Article

Compressive creep and oxidation resistance of an Si3N4 material fabricated in the system Si3N4-Si2N2O-Y2Si2O7LANGE, F. F; DAVIS, B. I; GRAHAM, H. C et al.Journal of the American Ceramic Society. 1983, Vol 66, Num 6, pp C98-C99, issn 0002-7820Article

Microstructure characterization of hot-pressed β-silicon nitride containing β-Si3N4 seedsBO WANG; JUN YANG; RUI GUO et al.Materials characterization. 2009, Vol 60, Num 8, pp 894-899, issn 1044-5803, 6 p.Article

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressureMATSUMOTO, M; INAYOSHI, Y; SUEMITSU, M et al.Applied surface science. 2008, Vol 254, Num 19, pp 6208-6210, issn 0169-4332, 3 p.Conference Paper

Ellipsometric characterization of inhomogeneous non-stoichiometric silicon nitride filmsNECAS, David; FRANTA, Daniel; OHLIDAL, Ivan et al.Surface and interface analysis. 2013, Vol 45, Num 7, pp 1188-1192, issn 0142-2421, 5 p.Article

Hard and relaxed a-SiNxHy films prepared by PECVD: Structure analysis and formation mechanismXIANGDONG XU; QIONG HE; TAIJUN FAN et al.Applied surface science. 2013, Vol 264, pp 823-831, issn 0169-4332, 9 p.Article

Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon waferHUANG, Bohr-Ran; YANG, Ying-Kan; YANG, Wen-Luh et al.Applied surface science. 2013, Vol 266, pp 245-249, issn 0169-4332, 5 p.Article

The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layersMAJEE, S; CERQUEIRA, M. F; TONDELIER, D et al.Surface & coatings technology. 2013, Vol 235, pp 361-366, issn 0257-8972, 6 p.Article

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVDKSHIRSAGAR, Abhijeet; NYAUPANE, Pradeep; BODAS, Dhananjay et al.Applied surface science. 2011, Vol 257, Num 11, pp 5052-5058, issn 0169-4332, 7 p.Article

An improved process for preparing tris(N-methylamino)methylsilane monomer for use in producing silicon carbide-silicon nitride fibersPENN, B. G; LEDBETTER, F. E. III; CLEMONS, J. M et al.Industrial and engineering chemistry. Process design and development. 1984, Vol 23, Num 2, pp 217-220, issn 0019-7882Article

Diffraction study of ss″-magnesium sialonLENG-WARD, G; LEWIS, M. H; WILD, S et al.Journal of materials science. 1984, Vol 19, Num 5, pp 1726-1736, issn 0022-2461Article

The removal of surface silica and its effect on the nitridation of high-purity siliconRAHAMAN, M. N; MOULSON, A. J.Journal of materials science. 1984, Vol 19, Num 1, pp 189-194, issn 0022-2461Article

Interface effects on the moisture barrier properties of SiNx/PMMA/SiNx hybrid structureMAJEE, Subimal; GEFFROY, Bernard; BONNASSIEUX, Yvan et al.Surface & coatings technology. 2014, Vol 254, pp 429-432, issn 0257-8972, 4 p.Article

Bone growth around silicon nitride implants-An evaluation by scanning electron microscopyGUEDES E SILVA, C. C; KÖNIG, B; CARBONARI, M. J et al.Materials characterization. 2008, Vol 59, Num 9, pp 1339-1341, issn 1044-5803, 3 p.Article

Band bending at the Si(100)-Si3N4 interface studied by photoreflectance spectroscopyDEV, Kapil; SEEBAUER, E. G.Surface science. 2005, Vol 583, Num 1, pp 80-87, issn 0039-6028, 8 p.Article

Silicon nitride (Si3N4)LATHROP, D.American Ceramic Society bulletin. 1999, Vol 78, Num 6, pp 76-77, issn 0002-7812Article

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