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Aerosol jet etchingCHEN, Y. L; BROCK, J. R; TRACHTENBERG, I et al.Aerosol science and technology. 1990, Vol 12, Num 4, pp 842-855, issn 0278-6826, 14 p.Article

Structure of glasses in the systems Mgi2SiO4-Fe2SiO4-Fe2SiO4, Mg2SiO4-CaMgSiO4, and Mn2SiO4-CaMnSiO4COONEY, T. F; SHARMA, S. K.Journal of non-crystalline solids. 1990, Vol 122, Num 1, pp 10-32, issn 0022-3093Article

Measurement of the displacement distribution by speckle photography using a BSO crystalNAKAGAWA, K; TAKATSUJI, T; MINEMOTO, T et al.Optics communications. 1990, Vol 76, Num 3-4, pp 206-212, issn 0030-4018, 7 p.Article

On the charge storage and decay mechanism in silicon dioxide electretsOLTHUIS, W; BERGVELD, P.IEEE transactions on electrical insulation. 1992, Vol 27, Num 4, pp 691-697, issn 0018-9367Conference Paper

Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devicesJENN-GWO HWU; JIN-BOR CHUANG; SHYH-LIANG FU et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 377-383, issn 0721-7250Article

Evidence for resonant tunneling of electrons via sodium ions in silicon dioxideKOCH, R. H; HARTSTEIN, A.Physical review letters. 1985, Vol 54, Num 16, pp 1848-1851, issn 0031-9007Article

Silicon-dioxide electret transducerHOHM, D; GERHARD-MULTHAUPT, R.The Journal of the Acoustical Society of America. 1984, Vol 75, Num 4, pp 1297-1298, issn 0001-4966Article

Thermal fixing of holographic gratings in Bi12SiO20ARIZMENDI, L.Journal of applied physics. 1989, Vol 65, Num 2, pp 423-427, issn 0021-8979Article

Mécanisme de formation de donneurs thermiques dans le silicium contenant de l'oxygèneBATAVIN, V. V; KOCHINA, EH. A; SAL'NIK, Z. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 692-696, issn 0015-3222Article

A novel synthetic procedure for the preparation of silicon sesquioxide at room temperatureBETTADAPURA SRINIVASAIAH SURESH; DODDABALLAPUR KRISHNAMURTHY PADMA.Journal of the Chemical Society. Dalton transactions. 1984, Num 8, pp 1779-1780, issn 0300-9246Article

A multilevel model for astronomical SiO masersELITZUR, M; WATSON, W. D; WESTERN, L. R et al.The Astrophysical journal. 1983, Vol 274, Num 1, pp 210-213, issn 0004-637XArticle

Angle-independent plasmonic infrared band-stop reflective filter based on the Ag/SiO2/Ag T-shaped arrayCHENG, Cheng-Wen; MOHAMMED NADHIM ABBAS; CHANG, Zi-Chang et al.Optics letters. 2011, Vol 36, Num 8, pp 1440-1442, issn 0146-9592, 3 p.Article

Cluster model and charge transfer in a strong metal-support interaction (SMSI) stateVISWANATHAN, B; TANAKA, K; TOYOSHIMA, I et al.Langmuir. 1986, Vol 2, Num 1, pp 113-116, issn 0743-7463Article

Noise measurements in thin film SiO diodesNGUYEN, T. P; MINN, S.Solid state communications. 1985, Vol 53, Num 4, pp 335-337, issn 0038-1098Article

Some electrical properties of thin film sandwich assemblies of SiO/V2O5AL-RAMADHAN, F. A. S; HOGARTH, C. A.Journal of materials science. 1984, Vol 19, Num 5, pp 1718-1725, issn 0022-2461Article

Vibrating sample magnetometer using a multilayer piezoelectric actuatorSHIN, K. H; PARK, K. I; KIM, Y et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 7, pp 1633-1636, issn 0370-1972, 4 p.Article

Blue―green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structuresBERENCEN, Y; JAMBOIS, O; RAMIREZ, J. M et al.Optics letters. 2011, Vol 36, Num 14, pp 2617-2619, issn 0146-9592, 3 p.Article

The solid solution in mulliteCHAUDHURI, S. P.Journal of the Canadian Ceramic Society. 1989, Vol 58, Num 1, pp 61-76, issn 0068-8444Article

Effect of air on debris formation in femtosecond laser ablation of crystalline SiODACHI, Go; SAKAMOTO, Ryosuke; HARA, Kento et al.Applied surface science. 2013, Vol 282, pp 525-530, issn 0169-4332, 6 p.Article

Ternary MoS2/SiO2/graphene hybrids for high-performance lithium storageSHENG HAN; YANRU ZHAO; YANPING TANG et al.Carbon (New York, NY). 2015, Vol 81, pp 203-209, issn 0008-6223, 7 p.Article

Ionization of xenon Rydberg atoms at oxidized Si(100) surfacesNEUFELD, D. D; DUNHAM, H. R; WETHEKAM, S et al.Surface science. 2008, Vol 602, Num 7, pp 1306-1312, issn 0039-6028, 7 p.Article

SEM/EDS study of metal-assisted oxide desorptionHOPF, T; MARKWITZ, A.Surface science. 2010, Vol 604, Num 17-18, pp 1531-1535, issn 0039-6028, 5 p.Article

Photo-modification and synthesis of semiconductor nanocrystalsNOZAKI, S; CHEN, C. Y; ONO, H et al.Surface science. 2007, Vol 601, Num 13, pp 2549-2554, issn 0039-6028, 6 p.Conference Paper

Interaction of cesium with charged oxide under UV irradiation imaged by photoemission electron microscopyFUKIDOME, Hirokazu; YOSHIMURA, Masamichi; UEDA, Kazuyuki et al.Surface science. 2007, Vol 601, Num 22, pp 5309-5312, issn 0039-6028, 4 p.Conference Paper

Formation of atomically smooth SiO2/SiC interfaces at ∼120 °C by use of nitric acid oxidation methodIMAI, Shigeki; FUJIMOTO, Masayuki; ASUHA et al.Surface science. 2006, Vol 600, Num 3, pp 547-550, issn 0039-6028, 4 p.Article

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