Improved SOI image sensor design based on backside illumination on silicon-on-sapphire (SOS) substrateCHAO SHEN; CHEN XU; HUANG, R et al.IEEE International SOI conference. 2002, pp 73-74, isbn 0-7803-7439-8, 2 p.Conference Paper

SOI-specific tri-state inverter and its applicationKIM, Jae-Joon; ROY, Kaushik.IEEE International SOI conference. 2002, pp 145-146, isbn 0-7803-7439-8, 2 p.Conference Paper

Recesseed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistanceAHN, C. G; CHO, W. J; IM, K. J et al.IEEE international SOI conference. 2004, pp 207-208, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Imaging of the SOI interface by high resolution electron microscopyYONG YAN; FUQUAN JI; JUN CHEN et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 1, pp K25-K28, issn 0031-8965Article

Characterization of front and back Si-SiO₂ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping techniqueWOUTERS, D. J; TACK, M. R; GROESENEKEN, G. V et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1746-1750, issn 0018-9383, 5 p., 1Article

A new formation process of anodizable structures of n, n⁺, and n^- silicon for the production of silicon-on-insulator structuresXIANG-ZHENG TU.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1530-1532, issn 0734-211XArticle

Transconductance of silicon-on-insulator (SOI) MOSFET'sCOLINGE, J.-P.IEEE electron device letters. 1985, Vol 6, Num 11, pp 573-574, issn 0741-3106Article

Investigation of charge control related performances in double-gate SOI MOSFETsKILCHYTSKA, V; CHUNG, T. M; VAN MEER, H et al.Proceedings - Electrochemical Society. 2003, pp 225-230, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO₂) dielectric and elevated source/drain extensionsVANDOOREN, A; EGLEY, S; CONNER, J et al.IEEE International SOI conference. 2002, pp 205-206, isbn 0-7803-7439-8, 2 p.Conference Paper

EUROSOI'06 Conference. Selected papersCLERC, Raphaël; FAYNOT, Olivier; KERNEVEZ, Nelly et al.Solid-state electronics. 2007, Vol 51, Num 2, issn 0038-1101, 157 p.Conference Proceedings

Silicon-on-insulator technology and devices XII (Quebec PQ, 15-20 May 2005)Celler, George K; Cristoloveanu, S; Gamiz, F et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-461-6, XI, 395 p, isbn 1-56677-461-6Conference Proceedings

A new structure for in-depth history effect characterization on partially depleted SOI transistorsFAYNOT, O; POIROUX, T; CLUZEL, J et al.IEEE International SOI conference. 2002, pp 35-36, isbn 0-7803-7439-8, 2 p.Conference Paper

Transient charge pumping for partially and fully depleted SOI MOSFETsOKHONIN, S; NAGOGA, M; FAZAN, P et al.IEEE International SOI conference. 2002, pp 171-172, isbn 0-7803-7439-8, 2 p.Conference Paper

Novel two-step SDB technology for high-performance thin-film SOI/MOSFET applicationsXU, X.-L; TONG, Q.-Y.Electronics Letters. 1989, Vol 25, Num 6, pp 394-395, issn 0013-5194, 2 p.Article

Measurement and modelling of SOI MOSFETs capacitancesTOMASZEWSKI, D; ŁUKASIAK, L; GIBKI, J et al.SPIE proceedings series. 2002, pp 725-728, isbn 0-8194-4500-2, 2VolConference Paper

A new mathematical model for semiconductor-on-insulator structuresLAI, P. T.Solid-state electronics. 1990, Vol 33, Num 4, pp 441-444, issn 0038-1101, 4 p.Article

Selected Full-Length Extended Papers from the EUROSOI 2009 ConferenceENGSTRÖM, Olof.Solid-state electronics. 2010, Vol 54, Num 2, issn 0038-1101, 137 p.Serial Issue

A 12dBm 320GHz GBW distributed amplifier in a 0.12μm SOI CMOSKIM, Jonghae; PLOUCHART, Jean-Olivier; ZAMDMER, Noah et al.IEEE International Solid-State Circuits Conference. 2004, pp 478-479, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in ground plane silicon-on-insulator (GPSOI) cross-talk suppression technologySTEFANOU, S; HAMEL, J. S; BAINE, P et al.IEEE international SOI conference. 2004, pp 84-85, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Advanced SOI structures based on wafer bonding: A short reviewGHYSELEN, B.Proceedings - Electrochemical Society. 2003, pp 96-109, issn 0161-6374, isbn 1-56677-402-0, 14 p.Conference Paper

Lp/lv ratioed DG-SOI logic with (intrinsically on) symmetric DG-MOSFET loadMITRA, Souvick; SALMAN, Akram; IOANNOU, Dimitris P et al.IEEE International SOI conference. 2002, pp 66-67, isbn 0-7803-7439-8, 2 p.Conference Paper

Two-dimensional polysilicon quantum-mechanical effects in double-gate SOICHOI, Chang-Hoon; ZHIPING YU; DUTTON, Robert W et al.IEDm : international electron devices meeting. 2002, pp 723-726, isbn 0-7803-7462-2, 4 p.Conference Paper

SOI technology, devices and characterizationBHAT, K. N; LAKSHMI, N; DASGUPTA, A et al.SPIE proceedings series. 2002, pp 576-583, isbn 0-8194-4500-2, 2VolConference Paper

Silicon on insulator technology by ion implantation and smart-cutDUTT, M. B; KUMAR, Rajendra; DATTA, P et al.SPIE proceedings series. 2002, pp 641-643, isbn 0-8194-4500-2, 2VolConference Paper

Gate-oxide integrity of silicon-on-insulator transistorsKAMINS, T. I.Electronics Letters. 1987, Vol 23, Num 4, pp 175-176, issn 0013-5194Article