Ultrathin SOI wafer fabrication and metrologyMALEVILLE, Christophe.Proceedings - Electrochemical Society. 2003, pp 33-44, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

Carrier lifetimes in SOI materialHOVEL, H. J.Proceedings - Electrochemical Society. 2003, pp 487-492, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

High performace strained-SOI CMOSFETsTAKAGI, Shin-Ichi; MIZUNO, Tomohisa; MAEDA, Tatsuro et al.Proceedings - Electrochemical Society. 2003, pp 159-174, issn 0161-6374, isbn 1-56677-375-X, 16 p.Conference Paper

The SOI OdysseyHEMMENT, Peter L. F.Proceedings - Electrochemical Society. 2003, pp 1-12, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

Silicon-on-insulator technology and devices XI (Paris, 28 April - 2 May 2003)Celler, G; Fossum, J; Gamiz, F et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-375-X, XI, 522 p, isbn 1-56677-375-XConference Proceedings

Status and future development of PDSOI MOSFETsKRISHNAN, Srinath.Proceedings - Electrochemical Society. 2003, pp 215-224, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Fully-quantum theory of SOI MOSFETsWALLS, T. J; SVERDLOV, V. A; LIKHAREV, K. K et al.Proceedings - Electrochemical Society. 2003, pp 401-406, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Real space transfer devices in SOILURYI, Serge.Proceedings - Electrochemical Society. 2003, pp 175-184, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Substrate bias effects in SOI FinFETsPRETET, J; DAUGE, F; VANDOOREN, A et al.Proceedings - Electrochemical Society. 2003, pp 231-236, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Emerging silicon-on-nothing (SON) devices technologySKOTNICKI, T; MONFRAY, S; FENOUILLET-BERANGER, C et al.Proceedings - Electrochemical Society. 2003, pp 133-148, issn 0161-6374, isbn 1-56677-375-X, 16 p.Conference Paper

Control of SEU in SOI SRAMs through carrier lifetime engineeringMITRA, S; IOANNOU, D. P; LIU, S. T et al.Proceedings - Electrochemical Society. 2003, pp 461-466, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Oxidation simulation of silicon nanostructures on silicon-on-insulator substratesUEMATSU, M; KAGESHIMA, H; SHIRAISHI, K et al.Proceedings - Electrochemical Society. 2003, pp 407-412, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Fully depleted SOI process and device technology for digital and RF applicationsICHIKAWA, F; NAGATOMO, Y; KATAKURA, Y et al.Proceedings - Electrochemical Society. 2003, pp 123-132, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Changes in the parameters of silicon-on-insulator structures under irradiationANTONOVA, I. V; NIKOLAEV, D. V; NAUMOVA, O. V et al.Proceedings - Electrochemical Society. 2003, pp 505-510, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Radiation damage in deep submicron partially depleted SOI CMOSSIMOEN, E; RAFI, J. M; MERCHA, A et al.Proceedings - Electrochemical Society. 2003, pp 437-442, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Investigation of charge control related performances in double-gate SOI MOSFETsKILCHYTSKA, V; CHUNG, T. M; VAN MEER, H et al.Proceedings - Electrochemical Society. 2003, pp 225-230, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Nature of high-temperature charge instability in fully depleted SOI MOSFETsNAZAROV, A. N; LYSENKO, V. S; COLINGE, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 455-460, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Saturation current model for the N-channel G⁴-FETDUFRENE, B; BLALOCK, B; CRISTOIOVEANU, S et al.Proceedings - Electrochemical Society. 2003, pp 367-372, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Modeling of Coulomb scattering of electrons in ultrathin symmetrical DG SOI transistorWALCZAK, J; MAJKUSLAK, B.Proceedings - Electrochemical Society. 2003, pp 355-360, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Characterization of SOI wafers by photoluminescence spectroscopy, decay and micro/macro-mappingTAJIMA, Michlo.Proceedings - Electrochemical Society. 2003, pp 413-424, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

Issues in high performance FinFET and FDSOI transistor designKEDZIERSKI, Jakub; IEONG, Meikei; NOWAK, Edward et al.Proceedings - Electrochemical Society. 2003, pp 185-196, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

Extremely scaled ultra-thin-body and finfet CMOS devicesBALASUBRAMANIAN, Sriram; CHANG, Leland; CHOI, Yang-Kyu et al.Proceedings - Electrochemical Society. 2003, pp 197-208, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

SOI thermal resistance and its application to thermal modeling of SOI MOSFETsCHENG, Ming-C; FEIXIA YU.Proceedings - Electrochemical Society. 2003, pp 395-400, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Status of 300 mm SOI material: Comparisons with 200 mmHOVEL, H; ALMONTE, M; BETTINGER, J et al.Proceedings - Electrochemical Society. 2003, pp 75-80, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper