Dichlorosilylene: rate constant for the gas-phase reaction with nitric oxideSANDHU, V; SAFARIK, I; STRAUSZ, O. P et al.Reviews of chemical intermediates. 1989, Vol 11, Num 1, pp 19-24, issn 0162-7546Article

Role of the trichlorosilyl radical and dichlorosilylene in gas-phase reactions of trichlorosilaneHEINICKE, J; GEHRHUS, B.Journal of analytical and applied pyrolysis. 1994, Vol 28, Num 1, pp 81-92, issn 0165-2370Article

Absolute rate constants for silylene reactions with diatomic moleculesCHU, J. O; BEACH, D. B; ESTES, R. D et al.Chemical physics letters. 1987, Vol 143, Num 2, pp 135-139, issn 0009-2614Article

Reaction of silicon difluoride with halogens: a reinvestigationSURESH, B. S; THOMPSON, J. C.Journal of the Chemical Society. Dalton transactions. 1987, Num 5, pp 1123-1126, issn 0300-9246Article

Gas phase reactions of SiF₂ with F₂ and Cl₂STANTON, A. C; FREEDMAN, A; WORMHOUDT, J et al.Chemical physics letters. 1985, Vol 122, Num 3, pp 190-195, issn 0009-2614Article

The equilibrium geometry of HNSiBOTSCHWINA, P; TOMMEK, M; SEBALD, P et al.The Journal of chemical physics. 1991, Vol 95, Num 10, pp 7769-7770, issn 0021-9606Article

REMPI/MS detection of SiF₂ radicals by (3+1) and (1+3) photoionizationHORWITZ, J. S; DULCEY, C. S; LIN, M. C et al.Chemical physics letters. 1988, Vol 150, Num 1-2, pp 165-170, issn 0009-2614Article

Wide fluctuations in fluorescence lifetimes of individual rovibronic levels in SiH₂ (ùB₁)THOMAN, J. W. JR; STEINFELD, J. I; MCKAY, R. I et al.The Journal of chemical physics. 1987, Vol 86, Num 11, pp 5909-5917, issn 0021-9606Article

Information theoretic analysis of quantal fluctuations in fluorescence lifetimesENGEL, Y. M; LEVINE, R. D; THOMAN, J. W. JR et al.Journal of physical chemistry (1952). 1988, Vol 92, Num 19, pp 5497-5500, issn 0022-3654Article

Quantal fluctuations in fluorescence lifetimes of individual rovibronic levelsENGEL, Y. M; LEVINE, R. D; THOMAN, J. W. JR et al.The Journal of chemical physics. 1987, Vol 86, Num 11, pp 6561-6563, issn 0021-9606Article

Microwave spectroscopic detection of dichlorosilylene SiCl₂ in the ground stateTANIMOTO, M; TAKEO, H; MATSUMURA, C et al.The Journal of chemical physics. 1989, Vol 91, Num 4, pp 2102-2107, issn 0021-9606Article

Atomic properties and the reactivity of carbenesMACDOUGALL, P. J; BADER, R. F. W.Canadian journal of chemistry (Print). 1986, Vol 64, Num 8, pp 1496-1508, issn 0008-4042Article

Dynamic stability of silacarbonyl ylideTACHIBANA, A; FUENO, H; OKAZAKI, I et al.International journal of quantum chemistry. 1992, Vol 42, Num 4, pp 929-939, issn 0020-7608Article

Unimolecular dissociation dynamics of disilaneAGRAWAL, P. M; THOMPSON, S. L; RAFF, L. M et al.The Journal of chemical physics. 1990, Vol 92, Num 2, pp 1069-1082, issn 0021-9606Article

Production of Si(¹D₂) from electronically excited SiH₂VAN ZOEREN, C. M; THOMAN, J. W. JR; STEINFELD, J. I et al.Journal of physical chemistry (1952). 1988, Vol 92, Num 1, pp 9-11, issn 0022-3654Article

Effect of electron correlation on the topological properties of molecular charge distributionsGATTI, C; MACDOUGALL, P. J; BADER, R. F. W et al.The Journal of chemical physics. 1988, Vol 88, Num 6, pp 3792-3804, issn 0021-9606Article

Trajectory studies of unimolecular reactions of Si₂H₄ and SiH₂ on a global potential surface fitted to ab initio and experimental dataAGRAWAL, P. M; THOMPSON, D. L; RAFF, L. M et al.The Journal of chemical physics. 1988, Vol 89, Num 2, pp 741-750, issn 0021-9606Article

New electronic emission from SiCl₂SEKIYA, H; NISHIMURA, Y; TSUJI, M et al.Chemical physics letters. 1991, Vol 176, Num 5, pp 477-481, issn 0009-2614, 5 p.Article

Tunneling instability in the cis-trans isomerization reaction of hydroxysilyleneTACHIBANA, A; FUENO, H; KOIZUMI, M et al.Journal of physical chemistry (1952). 1988, Vol 92, Num 4, pp 935-939, issn 0022-3654Article

On the singlet-triplet splitting in SiH₂, GeH₂, and SnH₂. Local-spin-density calculationsSELMANI, A; SALAHUB, D. R.The Journal of chemical physics. 1988, Vol 89, Num 3, pp 1529-1532, issn 0021-9606Article

Full CI benchmark calculations for molecular propertiesBAUSCHLICHER, C. W. JR; TAYLOR, P. R.Theoretica chimica acta. 1987, Vol 71, Num 4, pp 263-276, issn 0040-5744Article

Dissociation energetics of SiF systems of relevance to etching reactionsGARRISON, B. J; GODDARD, W. A. III.The Journal of chemical physics. 1987, Vol 87, Num 2, pp 1307-1314, issn 0021-9606Article

On the structure and stability of Si₂H₄OLBRICH, G.Chemical physics letters. 1986, Vol 130, Num 1-2, pp 115-119, issn 0009-2614Article

Theoretical studies of reactions of H₂SiNH and its isomer HSiNH₂TRUONG, T. N; GORDON, M. S.Journal of the American Chemical Society. 1986, Vol 108, Num 8, pp 1775-1778, issn 0002-7863Article

Dynamics of unimolecular dissociation of silyleneNOORBATCHA, I; RAFF, L. M; THOMPSON, D. L et al.The Journal of chemical physics. 1986, Vol 84, Num 8, pp 4341-4346, issn 0021-9606Article