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2006 IEEE International Solid-State Circuits ConferenceFLYNN, Michael P; MOK, Philip K. T; WANG, Zhihua et al.IEEE journal of solid-state circuits. 2006, Vol 41, Num 12, issn 0018-9200, 391 p.Conference Proceedings

Reliability assurance for devices with a sudden-failure characteristicSAUL, R. H; CHEN, F. S.IEEE electron device letters. 1983, Vol 4, Num 12, pp 467-468, issn 0741-3106Article

Analytical examination of the functional form of the experimental conduction characteristic for a formed MIM device showing VCNRRAY, A. K; HOGARTH, C. A; PANK, R. S et al.International journal of electronics. 1985, Vol 58, Num 5, pp 729-742, issn 0020-7217Article

Purping: a reliability assurance technique for new technology semiconductor devicesGORDON, E. I; NASH, F. R; HARTMAN, R. L et al.IEEE electron device letters. 1983, Vol 4, Num 12, pp 465-466, issn 0741-3106Article

2005 European solid state circuits conference (ESSCIRC)STEYAERT, Michiel S. J; RUSU, Stefan.IEEE journal of solid-state circuits. 2006, Vol 41, Num 7, issn 0018-9200, 183 p.Conference Proceedings

The 33rd European Solid-State Circuits Conference (ESSCIRC 2007)BASCHIROTTO, Andreas; CHARBON, Edoardo; RUSU, Stefan et al.IEEE journal of solid-state circuits. 2008, Vol 43, Num 7, issn 0018-9200, 206 p.Serial Issue

2007 Asian Solid-State Circuits Conference (A-SSCC'07)LU, Nicky; JOU, Shyh-Jye.IEEE journal of solid-state circuits. 2008, Vol 43, Num 11, pp 2351-2421, issn 0018-9200, 70 p.Conference Paper

Papers selected from the 35th European Solid-State Device Research Conference - ESSDERC'05GHIBAUDO, G; SKOTNICKI, T.Solid-state electronics. 2006, Vol 50, Num 4, issn 0038-1101, 208 p.Conference Proceedings

47th annual device research conference: abstracts, June 19-21 1989, Cambridge MAI.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2599-2631, issn 0018-9383, 33 p., part 1Conference Proceedings

A mathematical analysis for the peak of the conduction characteristic of formed MIM devicesRAY, A. K; HOGARTH, C. A.Journal of materials science letters. 1985, Vol 4, Num 5, pp 513-516, issn 0261-8028Article

Recombination in germanium: voltage-decay experiments on induced-junction devices and validity of the SRH modelHSIEH, Y. K; CARD, H. C.Solid-state electronics. 1984, Vol 27, Num 12, pp 1061-1066, issn 0038-1101Article

Quantum electrodynamic circuit soft-photon renormalization of the conductance in electronic shot-noise devicesWIDOM, A; PANCHERI, G; SRIVASTAVA, Y et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 6, pp 3412-3417, issn 0163-1829Article

Special Issue on the 2008 IEEE International Solid-State Circuits Conference (ISSCC)TSUKAMOTO, Sanroku; LIU, Shen-Iuan; HEINEN, Stefan et al.IEEE journal of solid-state circuits. 2008, Vol 43, Num 12, issn 0018-9200, 507 p.Conference Proceedings

ESSCIRC 2006KAISER, Andreas; RUSU, Stefan.IEEE journal of solid-state circuits. 2007, Vol 42, Num 7, issn 0018-9200, 175 p.Conference Proceedings

Size effect on contact resistance and device scalingCOHEN, S. S; GILDENBLAT, G; BROWN, D. M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 4, pp 978-980, issn 0013-4651Article

SPECIAL ISSUE ON THE 2010 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCEKAZUTAMI ARIMOTO; TAKEUCHI, Ken; KARNIK, Tanay et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 1, issn 0018-9200, 364 p.Conference Proceedings

Selected Papers from ISDRS 2009ILIADIS, Agis A; AKTURK, Akin.Solid-state electronics. 2010, Vol 54, Num 10, issn 0038-1101, 191 p.Conference Proceedings

Special Issue on the 2008 IEEE International Solid-State Circuits conference (ISSCC)HAM, Donhee; HIDAKA, Hideto; HO, Ron et al.IEEE journal of solid-state circuits. 2009, Vol 44, Num 1, issn 0018-9200, 313 p.Conference Proceedings

Modellistica dei dispositivi a semiconduttore = Modèle de dispositifs à semi-conducteurs = Model of solid state devicesBACCARINI, G; CIAMPOLINI, P; GNUDI, A et al.Alta frequenza. 1987, Vol 56, Num 5, pp 59I-71I, issn 0002-6557Article

2007 IEEE International Solid-State Circuits Conference (ISSCC)SEVENHANS, Jan; STONICK, John T; MILLER, Matt et al.IEEE journal of solid-state circuits. 2007, Vol 42, Num 12, issn 0018-9200, 357 p.Conference Proceedings

Transfer of the australian standard of EMF using a commercial solid-state referenceFRENKEL, R. B; MURRAY, W.Journal of physics. E. Scientific instruments. 1986, Vol 19, Num 7, pp 532-535, issn 0022-3735Article

Practical integration of process, device, and circuit simulationSOKEL, R. J; MACMILLEN, D. B.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 10, pp 2110-2116, issn 0018-9383Article

The MISS device: modelling and influence of critical parametersFIORE DE MATTOS, A. C; SARRABAYROUSE, G.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp 699-707, issn 0031-8965Article

The importance of ESD protection in electronics assemblyKOHLHAAS, P.Electri.onics. 1984, Vol 30, Num 9, pp 25-28, issn 0745-4309Article