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Papers Selected from the 38th European Solid-State Device Research Conference - ESSDERC'08ASHBURN, Peter; HALL, Stephen.Solid-state electronics. 2009, Vol 53, Num 7, issn 0038-1101, 142 p.Conference Proceedings

2006 IEEE International Solid-State Circuits ConferenceFLYNN, Michael P; MOK, Philip K. T; WANG, Zhihua et al.IEEE journal of solid-state circuits. 2006, Vol 41, Num 12, issn 0018-9200, 391 p.Conference Proceedings

Reliability assurance for devices with a sudden-failure characteristicSAUL, R. H; CHEN, F. S.IEEE electron device letters. 1983, Vol 4, Num 12, pp 467-468, issn 0741-3106Article

Analytical examination of the functional form of the experimental conduction characteristic for a formed MIM device showing VCNRRAY, A. K; HOGARTH, C. A; PANK, R. S et al.International journal of electronics. 1985, Vol 58, Num 5, pp 729-742, issn 0020-7217Article

Purping: a reliability assurance technique for new technology semiconductor devicesGORDON, E. I; NASH, F. R; HARTMAN, R. L et al.IEEE electron device letters. 1983, Vol 4, Num 12, pp 465-466, issn 0741-3106Article

2005 European solid state circuits conference (ESSCIRC)STEYAERT, Michiel S. J; RUSU, Stefan.IEEE journal of solid-state circuits. 2006, Vol 41, Num 7, issn 0018-9200, 183 p.Conference Proceedings

SPECIAL ISSUE ON THE 35TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC 2009)DEVAL, Yann; MAKINWA, Kofi A. A; RUSU, Stefan et al.IEEE journal of solid-state circuits. 2010, Vol 45, Num 7, issn 0018-9200, 152 p.Serial Issue

2005 Asian Solid-State Circuits Conference (A-SSCC'05)IEEE journal of solid-state circuits. 2006, Vol 41, Num 11, pp 2366-2423, issn 0018-9200, 57 p.Conference Paper

On the evaluation of statistical parameters of a normal distribution of filamentary resistances in a formed MIM deviceRAY, A. K; HOGARTH, C. A.Journal of materials science letters. 1985, Vol 4, Num 12, pp 1522-1523, issn 0261-8028Article

Comparative reliability study of n+-n and n+-n-n+ Gunn diodesMOJZES, I; KOVACS, B; VERESEGYHAZY, R et al.Microelectronics and reliability. 1989, Vol 29, Num 2, pp 131-132, issn 0026-2714, 2 p.Article

Sperrschichten in Halbleiterbauelementen = Couches d'appauvrissement dans les dispositifs semiconducteurs = Depletion layers in semiconductor devicesZSCHAUER, K.-H.Siemens Forschungs- und Entwicklungsberichte. 1986, Vol 15, Num 6, pp 291-295, issn 0370-9736Article

Carrier mobility determination in short-channel MOS devicesPETROVA, R. S; KAMBUROVA, R. S; NACHEV, I. S et al.Microelectronics. 1985, Vol 16, Num 6, pp 31-38, issn 0026-2692Article

GaAs/LB film MISS switching deviceTHOMAS, N. J; PETTY, M. C; ROBERT, G. G et al.Electronics Letters. 1984, Vol 20, Num 20, pp 838-839, issn 0013-5194Article

The 33rd European Solid-State Circuits Conference (ESSCIRC 2007)BASCHIROTTO, Andreas; CHARBON, Edoardo; RUSU, Stefan et al.IEEE journal of solid-state circuits. 2008, Vol 43, Num 7, issn 0018-9200, 206 p.Serial Issue

2007 Asian Solid-State Circuits Conference (A-SSCC'07)LU, Nicky; JOU, Shyh-Jye.IEEE journal of solid-state circuits. 2008, Vol 43, Num 11, pp 2351-2421, issn 0018-9200, 70 p.Conference Paper

Papers selected from the 35th European Solid-State Device Research Conference - ESSDERC'05GHIBAUDO, G; SKOTNICKI, T.Solid-state electronics. 2006, Vol 50, Num 4, issn 0038-1101, 208 p.Conference Proceedings

47th annual device research conference: abstracts, June 19-21 1989, Cambridge MAI.E.E.E. transactions on electron devices. 1989, Vol 36, Num 11, pp 2599-2631, issn 0018-9383, 33 p., part 1Conference Proceedings

A mathematical analysis for the peak of the conduction characteristic of formed MIM devicesRAY, A. K; HOGARTH, C. A.Journal of materials science letters. 1985, Vol 4, Num 5, pp 513-516, issn 0261-8028Article

Recombination in germanium: voltage-decay experiments on induced-junction devices and validity of the SRH modelHSIEH, Y. K; CARD, H. C.Solid-state electronics. 1984, Vol 27, Num 12, pp 1061-1066, issn 0038-1101Article

Quantum electrodynamic circuit soft-photon renormalization of the conductance in electronic shot-noise devicesWIDOM, A; PANCHERI, G; SRIVASTAVA, Y et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 6, pp 3412-3417, issn 0163-1829Article

Special Issue on the 2008 IEEE International Solid-State Circuits Conference (ISSCC)TSUKAMOTO, Sanroku; LIU, Shen-Iuan; HEINEN, Stefan et al.IEEE journal of solid-state circuits. 2008, Vol 43, Num 12, issn 0018-9200, 507 p.Conference Proceedings

ESSCIRC 2006KAISER, Andreas; RUSU, Stefan.IEEE journal of solid-state circuits. 2007, Vol 42, Num 7, issn 0018-9200, 175 p.Conference Proceedings

Size effect on contact resistance and device scalingCOHEN, S. S; GILDENBLAT, G; BROWN, D. M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 4, pp 978-980, issn 0013-4651Article

SPECIAL ISSUE ON THE 2010 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCEKAZUTAMI ARIMOTO; TAKEUCHI, Ken; KARNIK, Tanay et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 1, issn 0018-9200, 364 p.Conference Proceedings

Selected Papers from ISDRS 2009ILIADIS, Agis A; AKTURK, Akin.Solid-state electronics. 2010, Vol 54, Num 10, issn 0038-1101, 191 p.Conference Proceedings

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