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Surface atomic structure of alloyed Mn5Ge3(0001) by scanning tunneling microscopyKIM, Howon; JUNG, Goo-Eun; JONG KEON YOON et al.Surface science. 2008, Vol 602, Num 2, pp 481-486, issn 0039-6028, 6 p.Article

Interaction of cobalt with the Si(100)2 × 1 surface studied by photoelectron spectroscopyGOMOYUNOVA, M. V; PRONIN, I. I; GALL, N. R et al.Surface science. 2005, Vol 578, Num 1-3, pp 174-182, issn 0039-6028, 9 p.Article

Photoemission study of cobalt interaction with the oxidized Si(100)2 × 1 surfaceGOMOYUNOVA, M. V; PRONIN, I. I; MALYGIN, D. E et al.Surface science. 2006, Vol 600, Num 12, pp 2449-2456, issn 0039-6028, 8 p.Article

Hydrogen in amorphous Si and Ge during solid phase epitaxyJOHNSON, B. C; CARADONNA, P; PYKE, D. J et al.Thin solid films. 2010, Vol 518, Num 9, pp 2317-2322, issn 0040-6090, 6 p.Conference Paper

Growth of magnetic materials and structures on Si(O 0 1) substrates using Co2Si as a template layerOLIVE MENDEZ, S; LE THANH, V; RANGUIS, A et al.Applied surface science. 2008, Vol 254, Num 19, pp 6040-6047, issn 0169-4332, 8 p.Conference Paper

Variety of iron silicides grown on Si(001) surfaces by solid phase epitaxy : Schematic phase diagramNAKANO, H; MAETANI, K; HATTORI, K et al.Surface science. 2007, Vol 601, Num 22, pp 5088-5092, issn 0039-6028, 5 p.Conference Paper

Crystal structural premises to epitaxial contacts for a series of mercury-containing compoundsATUCHIN, V. V; BORISOV, S. V; MAGARILL, S. A et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 1125-1128, issn 0022-0248, 4 p.Conference Paper

Surface morphology of MnSi thin films grown on Si(111)SUZUKI, T; LUTZ, T; GEISLER, B et al.Surface science. 2013, Vol 617, pp 106-112, issn 0039-6028, 7 p.Article

Initial stages of iron silicide formation on the Si(100)2 × 1 surfaceGOMOYUNOVA, M. V; MALYGIN, D. E; PRONIN, I. I et al.Surface science. 2007, Vol 601, Num 21, pp 5069-5076, issn 0039-6028, 8 p.Article

Growth research of Sn nanoparticles deposited on Si(0 01 ) substrate by solid phase epitaxyXILEI ZHAO; WANG, Ke-Fan; WEIFENG ZHANG et al.Applied surface science. 2010, Vol 256, Num 21, pp 6427-6432, issn 0169-4332, 6 p.Article

Homogeneous Si films on CaF2/Si(111) due to boron enhanced solid phase epitaxyWOLLSCHLÄGER, J; DEITER, C; BIERKANDT, M et al.Surface science. 2006, Vol 600, Num 18, pp 3637-3641, issn 0039-6028, 5 p.Conference Paper

Scanning tunneling microscopy observations of Ge solid-phase epitaxy on Si(111)HIBINO, H; OGINO, T.Applied surface science. 1994, Vol 82-83, Num 1-4, pp 374-379, issn 0169-4332Conference Paper

Atomic mechanism of stimulated solid-phase epitaxial growth of amorphous layersGERASIMOV, A. B; BIBILASHVILI, A. P; BOKHOCHADZE, Z. G et al.Fizika i himiâ obrabotki materialov. 2001, Num 6, pp 62-68, issn 0015-3214Article

Effect of surfactant on Ge crystallization on Si in solid phase epitaxyAIZAWA, N; HOMMA, Y; TOMITA, M et al.Surface science. 1997, Vol 376, Num 1-3, pp L419-L423, issn 0039-6028Article

Growth and electronic structure of holmium silicides by STM and STSPERKINS, E. W; SCOTT, I. M; TEAR, S. P et al.Surface science. 2005, Vol 578, Num 1-3, pp 80-87, issn 0039-6028, 8 p.Article

Thickness dependent structure of β-FeSi2 grown on silicon by solid phase epitaxyVOUROUTZIS, N; ZORBA, T. T; DIMITRADIS, C. A et al.Journal of alloys and compounds. 2005, Vol 393, pp 167-170, issn 0925-8388, 4 p.Article

New approach to remove crystal originated pits in Czochralski-grown silicon: combination of germanium ion implantation with solid-phase epitaxyQINGHUA XIAO; HAILING TU.Journal of crystal growth. 2004, Vol 271, Num 3-4, pp 368-375, issn 0022-0248, 8 p.Article

Growth of epitaxial TmFeCuO4 thin films by pulsed laser depositionSEKI, Munetoshi; MIKAMI, Masateru; IWAMOTO, Fujiyuki et al.Journal of crystal growth. 2010, Vol 312, Num 15, pp 2273-2278, issn 0022-0248, 6 p.Article

Surfactant enhanced growth of thin Si films on CaF2/Si(111)WANG, C. R; MÜLLER, B. H; BUGIEL, E et al.Applied surface science. 2003, Vol 211, Num 1-4, pp 203-208, issn 0169-4332, 6 p.Article

Influences of oxygen contamination on evaporated poly-Si thin-film solar cells by solid-phase epitaxySONG HE; WONG, Johnson; INN, Daniel et al.Thin solid films. 2010, Vol 518, Num 15, pp 4351-4355, issn 0040-6090, 5 p.Article

Nanostructuring of Fe films by oblique incidence deposition on a FeSi2 template onto Si(111) : Growth, morphology, structure and facetingBUBENDORFF, J. L; GARREAU, G; ZABROCKI, S et al.Surface science. 2009, Vol 603, Num 2, pp 373-379, issn 0039-6028, 7 p.Article

Enhanced n-type dopant solubility in tensile-strained SiBENNETT, N. S; RADAMSON, H. H; BEER, C. S et al.Thin solid films. 2008, Vol 517, Num 1, pp 331-333, issn 0040-6090, 3 p.Conference Paper

The growth of an epitaxial Mg-Al spinel layer on sapphire by solid-state reactionsLIU, Che-Ming; CHEN, Jyh-Chen; CHEN, Chun-Jen et al.Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 275-283, issn 0022-0248, 9 p.Article

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxyFISSEL, A; DARGIS, R; BUGIEL, E et al.Thin solid films. 2010, Vol 518, Num 9, pp 2546-2550, issn 0040-6090, 5 p.Conference Paper

Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thicknessOKADA, Atsushi; TOKO, Kaoru; HARA, Kosuke O et al.Journal of crystal growth. 2012, Vol 356, pp 65-69, issn 0022-0248, 5 p.Article

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