A novel BEM―LIGBT with high current density on thin SOI layer for 600 V HVICJING ZHU; WEIFENG SUN; JIAN CHEN et al.Solid-state electronics. 2014, Vol 100, pp 33-38, issn 0038-1101, 6 p.Article

A physics-based scheme for potentials of a-Si:H TFT with symmetric dual gate considering deep Gaussian DOS distributionJIAN QIN; YAO, R. H.Solid-state electronics. 2014, Vol 95, pp 46-51, issn 0038-1101, 6 p.Article

Backgating effect in III-V MESFET's: A physical modelMANIFACIER, J. C; ARDEBILI, R.Solid-state electronics. 2014, Vol 91, pp 13-18, issn 0038-1101, 6 p.Article

Behavior of the parameters of microcrystalline silicon TFTs under mechanical strainJAM-FULL, S; SIMON, C; COULON, N et al.Solid-state electronics. 2014, Vol 93, pp 1-7, issn 0038-1101, 7 p.Article

Chromatic-stability white organic light emitting diodes based on phosphorescence doped electron transport layerPENGCHAO ZHOU; FEIFEI WANG; HONG LIN et al.Solid-state electronics. 2014, Vol 94, pp 6-10, issn 0038-1101, 5 p.Article

Compact core model for Symmetric Double-Gate Junctionless TransistorsCERDEIRA, A; AVILA, F; INIGUEZ, B et al.Solid-state electronics. 2014, Vol 94, pp 91-97, issn 0038-1101, 7 p.Article

Compact modeling of the shift between classical and quantum threshold voltages in a III―V nanowireHIBLOT, G; RAFHAY, Q; BOEUF, F et al.Solid-state electronics. 2014, Vol 100, pp 71-78, issn 0038-1101, 8 p.Article

Effects of thermal treatment on radiative properties of HVPE grown InP layersLURYI, Serge; SEMYONOV, Oleg; SUBASHIEV, Arsen et al.Solid-state electronics. 2014, Vol 95, pp 15-18, issn 0038-1101, 4 p.Article

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nmNAJMZADEH, Mohammad; BERTHOME, Matthieu; SALLESE, Jean-Michel et al.Solid-state electronics. 2014, Vol 98, pp 55-62, issn 0038-1101, 8 p.Article

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitrySHAH, V. A; MYRONOV, M; RHEAD, S. D et al.Solid-state electronics. 2014, Vol 98, pp 93-98, issn 0038-1101, 6 p.Article

High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layersWU, Yi-Chen; TSAI, Jung-Hui; CHIANG, Te-Kuang et al.Solid-state electronics. 2014, Vol 92, pp 52-56, issn 0038-1101, 5 p.Article

High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistorsCOLON, Albert; JUNXIA SHI.Solid-state electronics. 2014, Vol 99, pp 25-30, issn 0038-1101, 6 p.Article

In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperatureACHOUR, H; CRETU, B; ROUTOURE, J.-M et al.Solid-state electronics. 2014, Vol 98, pp 12-19, issn 0038-1101, 8 p.Article

Interface phonon modes of dual-gate MOSFET systemNANZHU ZHANG; DUTTA, Mitra; STROSCIO, Michael A et al.Solid-state electronics. 2014, Vol 94, pp 72-81, issn 0038-1101, 10 p.Article

Investigation of process-induced performance variability and optimization of the 10 nm technology node Si bulk FinFETsBAEK, Rock-Hyun; CHANG YONG KANG; SOHN, Chang-Woo et al.Solid-state electronics. 2014, Vol 96, pp 27-33, issn 0038-1101, 7 p.Article

Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectricsDOS SANTOS, S. D; CRETU, B; STROBEL, V et al.Solid-state electronics. 2014, Vol 97, pp 14-22, issn 0038-1101, 9 p.Article

MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD toolsLACORD, Joris; GHIBAUDO, Gérard; BOEUF, Frédéric et al.Solid-state electronics. 2014, Vol 91, pp 137-146, issn 0038-1101, 10 p.Article

Modeling the voltage nonlinearity of high-k MIM capacitorsKANNADASSAN, D; KARTHIK, R; MARYAM SHOJAEI BAGHINI et al.Solid-state electronics. 2014, Vol 91, pp 112-117, issn 0038-1101, 6 p.Article

Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gateAHN, Ho-Kyun; KIM, Zin-Sig; KWON, Yong-Hwan et al.Solid-state electronics. 2014, Vol 95, pp 42-45, issn 0038-1101, 4 p.Article

On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodesWANG, C. K; CHIOU, Y. Z; CHANG, S. J et al.Solid-state electronics. 2014, Vol 99, pp 11-15, issn 0038-1101, 5 p.Article

On the g_m/I_D-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETsRUDENKO, T; MD ARSHAD, M. K; RASKIN, J.-P et al.Solid-state electronics. 2014, Vol 97, pp 52-58, issn 0038-1101, 7 p.Article

Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approachesSATO-IWANAGA, Junko; INOUE, Akira; TSUCHIYA, Hideaki et al.Solid-state electronics. 2014, Vol 91, pp 1-8, issn 0038-1101, 8 p.Article

Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistorsMIN LIU; YUMING ZHANG; HONGLIANG LU et al.Solid-state electronics. 2014, Vol 96, pp 9-13, issn 0038-1101, 5 p.Article

Reliability of ultra-thin buried oxides for multi-V_T FDSOI technologyBESNARD, G; GARROS, X; DELPRAT, D et al.Solid-state electronics. 2014, Vol 97, pp 8-13, issn 0038-1101, 6 p.Article

Threshold voltage extraction in Tunnel FETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MUCI, Juan et al.Solid-state electronics. 2014, Vol 93, pp 49-55, issn 0038-1101, 7 p.Article