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Diode laser arrays with high power in the 4 to 5 μm infrared regionLINDEN, K. J; REEDER, R. E.Optical engineering (Bellingham. Print). 1984, Vol 23, Num 5, pp 685-686, issn 0091-3286Article
Equilibres de phases dans les systèmes Na2S(Se)-GeS2(Se2)MIKAJLO, I. L; LAZAREV, V. B; PERESH, E. YU et al.Žurnal neorganičeskoj himii. 1989, Vol 34, Num 9, pp 2319-2323, issn 0044-457XArticle
Optical nonlinearities of glasses doped with semiconductor microcrystallitesOLBRIGHT, G. R; PEYGHAMBARIAN, N; KOCH, S. W et al.Optics letters. 1987, Vol 12, Num 6, pp 413-415, issn 0146-9592Article
Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysisKUNDU, Sambhu; OLSEN, Larry C.Thin solid films. 2005, Vol 471, Num 1-2, pp 298-303, issn 0040-6090, 6 p.Article
Thermal relaxation of the structural and optical properties of amorphous As40S60-xSex filmsGONZALEZ-LEAL, J. M; VLCEK, Mir; PRIETO-ALCON, R et al.Journal of non-crystalline solids. 2003, Vol 326-27, Num 1, pp 146-153, issn 0022-3093, 8 p.Conference Paper
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurementsQASRAWI, A. F; GASANLY, N. M.Physica status solidi. A. Applied research. 2002, Vol 194, Num 1, pp 81-88, issn 0031-8965, 8 p.Article
Real-time studies of phase transformations in Cu-In-Se-S thin films- 3: Selenization of Cu-In precursorsDJORDIEVIC, J; RUDIGIER, E; SCHEER, R et al.Journal of crystal growth. 2006, Vol 294, Num 2, pp 218-230, issn 0022-0248, 13 p.Article
Cavity length dependence of photopumped lasing properties of MOCVD-grown ZnSe/ZnMgSSe double-heterostructureTODA, A; IMANISHI, D; KAWASUMI, T et al.Electronics Letters. 1995, Vol 31, Num 2, pp 101-102, issn 0013-5194Article
Optically pumped blue-green vertical cavity surface emitting lasersJEON, H; KOZLOV, V; KELKAR, P et al.Electronics Letters. 1995, Vol 31, Num 2, pp 106-108, issn 0013-5194Article
Structural and electrical characterization of SxSe10-x thin filmsEL-NAHASS, M. M; SEYAM, M. A. M; EL-SAYED, H. E. A et al.Applied surface science. 2006, Vol 252, Num 18, pp 6218-6227, issn 0169-4332, 10 p.Article
Steps toward industrialization of Cu-III-VI2 thin-film solar cells: a novel full in-line conceptSHAO, L. X; CHANG, K. H; CHUNG, T. H et al.The Journal of physics and chemistry of solids. 2003, Vol 64, Num 9-10, pp 1505-1509, issn 0022-3697, 5 p.Conference Paper
Appearance of ferroelectricity in thin SxSe1-x crystalline filmsKITYK, I. V.Ferroelectrics (Print). 2001, Vol 265, pp 233-240, issn 0015-0193Article
Remarkable improvement in emission efficiency of ZnCdSe/Zn(S)Se LEDs by thermal annealing : Short wavelength optical sources based on wide bandgap II-VI heterostructuresICHIMURA, Y; KISHINO, K; KURAMOTO, M et al.Journal of electronic materials. 1995, Vol 24, Num 3, pp 171-176, issn 0361-5235Article
Theoretical design of 460 nm ZnCdSSe laser diodesIMAJUKU, W; TAKAHASHI, M; KOBAYASHI, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 4A, pp 1861-1866, issn 0021-4922, 1Article
Absorption bistability and nonlinearity in evaporated thin filmsEICHLER, H. J; HAASE, A; JANIAK, K et al.Optics communications. 1992, Vol 88, Num 4-6, pp 298-304, issn 0030-4018Article
Room-temperature photodumped blue lasing in ZnSe-ZnS0.06Se0.94 double heterostructuresGANG SUN; SHAHZAD, K; GAINES, J. M et al.Applied physics letters. 1991, Vol 59, Num 3, pp 310-311, issn 0003-6951Article
Dispersion of the third-order optical non-linearity in semiconductor-doped glassesHORAN, P; BLAU, W.Semiconductor science and technology. 1987, Vol 2, Num 6, pp 382-384, issn 0268-1242Article
MULTISPECTRAL PBSXSE1-X AND PBYSN1-Y SE PHOTOVOLTAIE INFRARED DETECTORSSCHOOLAR RB; JENSEN JD; BLACK GM et al.1980; INFRARED PHYS.; GBR; DA. 1980; VOL. 20; NO 4; PP. 271-275; BIBL. 9 REF.Article
P-N FUNCTION OBSERVATIONS ON PB-SALT DIODE LASERS USING AN EBIC-MODE SEMLINDEN KJ.1982; J. ELECTRON. MATER; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 3; PP. 575-596; BIBL. 17 REF.Article
PBS1-XSEX(0 <OU= X <OU= 1) PHOTOVOLTAIC DETECTORS: CARRIER LIFETIMES AND RESISTANCE-AREA PRODUCTROGALSKI A; KASZUBA W.1983; INFRARED PHYSICS; ISSN 0020-0891; GBR; DA. 1983; VOL. 23; NO 1; PP. 23-32; BIBL. 32 REF.Article