Semiconductor laser linewidthHENNING, I. D; ADAMS, M. J.British Telecom technology journal. 1985, Vol 3, Num 3, pp 19-24, issn 0265-0193Article

The influence of many-body effects on the gain and linewidth of semiconductor lasersBARDYSZEWSKI, W; YEVICK, D.Journal of applied physics. 1989, Vol 66, Num 2, pp 988-991, issn 0021-8979, 4 p.Article

Direct observation of visibility curve of semiconductor lasersEICKHOFF, W; BRINKMEYER, E; BARFUSS, H et al.Electronics Letters. 1983, Vol 19, Num 18, pp 739-740, issn 0013-5194Article

Extraction of accurate autoionisation widths from the emission spectrum of doubly-excited HeCEDERQUIST, H; KISIELINSKI, M; MANNERVIK, S et al.Journal of physics. B. Atomic and molecular physics. 1983, Vol 16, Num 16, pp L479-L484, issn 0022-3700Article

Spectral linewidth of external cavity semiconductor lasers with strong, frequency-selective feedbackWYATT, R.Electronics Letters. 1985, Vol 21, Num 15, pp 658-659, issn 0013-5194Article

Dispersion of the linewidth enhancement factor in semiconductor injection lasersOGASAWARA, N; ITO, R; TONE, K et al.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L518-L520, issn 0021-4922Article

Linewidth stabilization of semiconductor lasers in an external cavityNIELSEN, C. J; OSMUNDSEN, J. H.Journal of optical communications. 1984, Vol 5, Num 2, pp 42-45, issn 0173-4911Article

Reduction of dynamic linewidth in single-frequency semiconductor lasersOLSHANSKY, R; FYE, D.Electronics Letters. 1984, Vol 20, Num 22, pp 928-929, issn 0013-5194Article

Spatial variation of the linewidth of Kr atomic lines as observed on optogalvanic signals in cathode fall region of hollow cathode dischargeKAWAKITA, K; NAKAJIMA, T; ADACHI, Y et al.Optics communications. 1983, Vol 48, Num 2, pp 121-124, issn 0030-4018Article

Semiconductor laser linewidth in optical feedback configurationsPATZAK, E; SUGIMURA, A; SAITO, S et al.Electronics Letters. 1983, Vol 19, Num 24, pp 1026-1027, issn 0013-5194Article

A tool to calculate the linewidth of complicated semiconductor lasersBJORK, G; NILSSON, O.IEEE journal of quantum electronics. 1987, Vol 23, Num 8, pp 1303-1313, issn 0018-9197Article

Mesure des valeurs locales de la largeur uniforme d'une raie spectrale dans un plasmaAKHMEDZHANOV, R. A; POLUSHKIN, I. N; KHANIN, YU. I et al.Fizika plazmy (Moskva, 1975). 1984, Vol 10, Num 4, pp 865-869, issn 0134-5052Article

Natural linewidth of semiconductor lasersARNAUD, J.Electronics Letters. 1986, Vol 22, Num 10, pp 538-540, issn 0013-5194Article

An inexpensive optical spectrum analyser for measuring laser linewidthsMCINTYRE, I. A; DUNN, M. H.Journal of physics. E. Scientific instruments. 1984, Vol 17, Num 4, pp 274-277, issn 0022-3735Article

Phase noise in a laser with output couplingUJIHARA, K.IEEE journal of quantum electronics. 1984, Vol 20, Num 7, pp 814-818, issn 0018-9197Article

SIMPLE LINEWIDTH-REDUCING MODIFICATION FOR A HANSCH DYE LASERGALLAGHER TF; KACHRU R; GOUNAND F et al.1982; APPL. OPT.; ISSN 0003-6935; USA; DA. 1982; VOL. 21; NO 3; PP. 363-364; BIBL. 1 REF.Article

ON THE BALDWIN EFFECT IN OPTICALLY-SELECTED QUASARSKIANG T; CHENG FH; ZHOU YY et al.1983; MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY; ISSN 0035-8711; GBR; DA. 1983; VOL. 203; NO 2; PP. 25P-29P; BIBL. 11 REF.Article

MEASUREMENTS OF THE VELOCITY AND WIDTH OF THE H₂2.1 MICRON EMISSION LINE FROM THE ORION NEBULAOGDEN PM; ROESLER FL; REYNOLDS RJ et al.1978; ASTROPHYS. J.; USA; DA. 1978; VOL. 226; NO 2 PART. 2; PP. L91-L94; BIBL. 19 REF.Article

Zum Einfluss einer Temperaturabhängigkeit des Frequenzfaktors auf die Form und Breite von Glow-Peaks = Influence de la variation thermique du facteur de fréquence sur la forme et la longueur du pic de luminescence = Effect of frequency factor thermal variation on shape and width of glow-peaksBALARIN, M.Physica status solidi. A. Applied research. 1983, Vol 77, Num 1, pp 181-194, issn 0031-8965Article

Calcul de la valeur de la fonction de Voigt au centre de raieKUDRYA, V. P.Optika i spektroskopiâ. 1983, Vol 55, Num 6, pp 1113-1114, issn 0030-4034Article

New approach towards frequency stabilisation of linewidth-narrowed semiconductor lasersNIELSEN, C. J; OSMUNDSEN, J. H.Electronics Letters. 1983, Vol 19, Num 16, pp 644-646, issn 0013-5194Article

Power dependence of the linewidth enhancement term in semiconductor lasersELSÄSSER, W.Applied physics letters. 1984, Vol 44, Num 12, pp 1126-1128, issn 0003-6951Article

35-CL NQR spectroscopy of polychloralBRAME, E. G; RAEVSKY, A. M; SEMIN, G. K et al.Polymer bulletin (Berlin. Print). 1983, Vol 10, Num 11-12, pp 521-525, issn 0170-0839Article

Theory of a homogeneously broadened laser with arbitrary mirror outcoupling : intrinsic linewidth and phase diffusionPRASAD, S.Physical review. A. 1992, Vol 46, Num 3, pp 1540-1559, issn 1050-2947Article

Relationship between linewidth and chirp reductions in gain-detuned composite-cavity semiconductor lasersGALLION, P; DEBARGE, G.Electronics Letters. 1987, Vol 23, Num 25, pp 1375-1376, issn 0013-5194Article