Diffusion et gettering du chrome dans le silicium dopé au boreZhu, Jin; Barbier, Daniel.1989, 121 p.Thesis

System effects in double-channel gated-integrator-based deep-level transient spectroscopyBALASUBRAMANYAM, N; VIKRAM KUMAR.Journal of applied physics. 1988, Vol 64, Num 11, pp 6311-6314, issn 0021-8979Article

Capacitance switching method of eliminating false transients on the Boonton 72B capacitance meter in deep-level transient spectroscopy applicationsCHRISTOFOROU, N; LESLIE, J. D.Measurement science & technology (Print). 1991, Vol 2, Num 2, pp 127-130, issn 0957-0233Article

Problem of increasing the resolution of deep level transient spectroscopyCHIKHRAI, E. V; ABDULLIN, K. A; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 453-454, issn 0038-5700Article

Current DLTS with a bipolar rectangular weighteing function for MOS structuresTOKUDA, Y; USAMI, A.Japanese journal of applied physics. 1983, Vol 22, Num 10, issn 0021-4922, 1629Article

An efficient technique for analyzing deep level transient spectroscopy dataDEVRIES, P. D; AZIM KHAN, A.Journal of electronic materials. 1989, Vol 18, Num 4, pp 543-547, issn 0361-5235, 5 p.Article

On the determination of deep level concentration profiles by DLTS measurementsMAASS, K; IRMSCHER, K; KLOSE, H et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp 667-675, issn 0031-8965Article

Optimization and preservation of deep-level transient spectroscopy signal responseTHOMAS, H.Journal of applied physics. 1985, Vol 57, Num 10, pp 4619-4622, issn 0021-8979Article

Side data analysis of deep level transient spectroscopy spectra for a multipoint correlation method with binomial weighting coefficientsDMOWSKI, K.Solid-state electronics. 1995, Vol 38, Num 5, pp 1051-1057, issn 0038-1101Article

Current DLTS with a bipolar rectangular weighting function for a neutron-irradiated P-type SiTOKUDA, Y; USAMI, A.Japanese journal of applied physics. 1983, Vol 22, Num 2, issn 0021-4922, 371Article

Dotierungseigenschaften von Kobalt in Silizium = Donor properties of cobalt into siliconLEMKE, H.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp 649-659, issn 0031-8965Article

Some peculiar features of small-signal charge DLTS response of GaAs MOS capacitorsTHURZO, I; PINCIK, E.Physica status solidi. A. Applied research. 1984, Vol 86, Num 2, pp 795-804, issn 0031-8965Article

Deep electron traps in undoped GaAs grown by MOCVDHASHIZUME, T; IKEDA, E; AKATSU, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L296-L298, issn 0021-4922, 2Article

Photoionization cross section of electron irradiation induced levels in siliconBROTHERTON, S. D; PARKER, G. J; GILL, A et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5112-5116, issn 0021-8979Article

The mobility of a nickel-related centre in reverse biased germanium n+p diodesPEARTON, S. J; TAVENDALE, A. J.Solid-state electronics. 1983, Vol 26, Num 10, pp 1019-1021, issn 0038-1101Article

A new correlation method for improvement in selectivity of bulk trap measurements from capacitance and voltage transientsDMOWSKI, K.Review of scientific instruments. 1990, Vol 61, Num 4, pp 1319-1325, issn 0034-6748Article

Fourier analysis for the isothermal capacitance transient spectroscopy signalISHIKAWA, T; YOUNG KYU KWON; KUWANO, H et al.Applied physics letters. 1985, Vol 47, Num 10, pp 1097-1099, issn 0003-6951Article

Current DLTS spectra of MIS structures due to dielectric polarization of the insulatorHROBAR, M; GRENDEL, M; THURZO, I et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 519-525, issn 0031-8965Article

Personal computer-based automatic measurement system applicable to deep-level transient spectroscopyCHANG, C. Y; HSU, W. C; UANG, C. M et al.Review of scientific instruments. 1984, Vol 55, Num 4, pp 637-639, issn 0034-6748Article

Application of the divisor method to multiple peak DLTS spectraDEVRIES, P. D; AZIM KHAN, A.Journal of electronic materials. 1989, Vol 18, Num 6, pp 763-766, issn 0361-5235Article

Optische DLTS ― eine wertvalle Ergänzung der konventionellen DLTS = Optical DLTS ― a valuable completion of the conventional DLTSBREHME, S.Experimentelle Technik der Physik. 1985, Vol 33, Num 3, pp 263-275, issn 0014-4924Article

Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InPSIBILLE, A; SUSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5551-5553, issn 0163-1829Article

Suppression of thermal donor formation in heavily doped n-type siliconWADA, K; INOUE, N.Journal of applied physics. 1985, Vol 57, Num 12, pp 5145-5147, issn 0021-8979Article

On the origin of transient charging of the insulator of Al-SiO₂-Si structures in deep-level transient current spectroscopy experimentsTHURZO, I; OZVOLD, M; BARTOS, J et al.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 4, pp 827-838, issn 0022-3727Article

Process-induced defect states in GaAsP light emitting diodesHENNING, I. D; THOMAS, H.Physica status solidi. A. Applied research. 1983, Vol 79, Num 2, pp 567-574, issn 0031-8965Article