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X-ray diffraction line profile analysis for defect study in Cu-1 wt.% Cr-0.1 wt.% Zr alloyKAPOOR, K; LAHIRI, D; BATRA, I. S et al.Materials characterization. 2005, Vol 54, Num 2, pp 131-140, issn 1044-5803, 10 p.Article

Crystallization and disappearance of defects of the annealed silicon nanowiresJUNJIE NIU; JIAN SHA; YOUWEN WANG et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 65-69, issn 0167-9317, 5 p.Conference Paper

Comment on: a/[110] stacking fault model for platelets in diamond. Authors' replyJONES, R; HEGGIE, M. I; GOSS, J. P et al.Physical review letters. 2005, Vol 95, Num 13, pp 139601.1-139602.1, issn 0031-9007Article

A new type of quantum wells: stacking faults in silicon carbideIWATA, Hisaomi; LINDEFELT, Ulf; ÖBERG, Sven et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 371-374, issn 0959-8324, 4 p.Conference Paper

Formation of stacking faults in nitrogen-doped silicon single crystalsAMMON, W. V; HÖLZL, R; WETZEL, T et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 234-246, issn 0167-9317, 13 p.Conference Paper

Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxyOHNO, Y; TAISHI, T; YONENAGA, I et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 650-653, issn 0921-4526, 4 p.Conference Paper

Thermal annealing and propagation of shockley stacking faults in 4H-SiC PiN diodesCALDWELL, Joshua D; LIU, Kendrick X; TADJER, Marko J et al.Journal of electronic materials. 2007, Vol 36, Num 4, pp 318-323, issn 0361-5235, 6 p.Article

Transmission electron microscopy study of stacking faults and their interaction with pyramidal dislocations in deformed MgLI, B; YAN, P. F; SUI, M. L et al.Acta materialia. 2010, Vol 58, Num 1, pp 173-179, issn 1359-6454, 7 p.Article

The shape of Shockley partial dislocations in the process of forming a stacking-fault tetrahedronLIU BEN-LIN; WANG HAI-DA.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 51, Num 5, pp L55-L59, issn 0141-8610Article

Characterization of planar features in Mg-Y-Zn alloysZHU, Y. M; MORTON, A. J; WEYLAND, M et al.Acta materialia. 2010, Vol 58, Num 2, pp 464-475, issn 1359-6454, 12 p.Article

Pure copper processed by extrusion preceded equal channel angular pressingZI, Aikaterini.Materials characterization. 2010, Vol 61, Num 2, pp 141-144, issn 1044-5803, 4 p.Article

Electron microscope weak-beam imaging of stacking fault tetrahedra : observations and simulationsJENKINS, M. L; ZHOU, Z; DUDAREV, S. L et al.Journal of materials science. 2006, Vol 41, Num 14, pp 4445-4453, issn 0022-2461, 9 p.Conference Paper

OXIDATION INDUCED STACKING FAULTS IN N- AND P-TYPE (100) SILICON.MURARKA SP; QUINTANA G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 46-51; BIBL. 50 REF.Article

The influence of interstitial carbon on the γ-surface in austeniteGHOLIZADEH, Hojjat; DRAXL, Claudia; PUSCHNIG, Peter et al.Acta materialia. 2013, Vol 61, Num 1, pp 341-349, issn 1359-6454, 9 p.Article

Theoretical investigation of {110} generalized stacking faults and their relation to dislocation behavior in perovskite oxidesHIREL, P; MARTON, P; MROVEC, M et al.Acta materialia. 2010, Vol 58, Num 18, pp 6072-6079, issn 1359-6454, 8 p.Article

Thickness dependent stripe structure stability of Ag films on Si(1 1 1)-(4 × 1)-In substrateLIU, D; ZHAO, M; JIANG, Q et al.Applied surface science. 2007, Vol 253, Num 7, pp 3586-3588, issn 0169-4332, 3 p.Article

EINE ERWEITERUNG DES VERFAHRENS DER ROENTGENOGRAPHISCHEN LINIENBREITEANALYSE ZUR ERMITTLUNG DER STAPELFEHLERDICHTE. = EXTENSION DU PROCEDE D'ANALYSE RADIOGRAPHIQUE DE LA LARGEUR DES RAIES POUR DETERMINER LA DENSITE DES DEFAUTS D'EMPILEMENTLOWE P.1977; WISSENSCH. Z. HOCHSCH. VERK.-WES. "FRIEDRICH LIST" DRESDEN; DTSCH.; DA. 1977; VOL. 24; NO 4; PP. 741-747; BIBL. 6 REF.Article

Stacking faults formation mechanism of in situ synthesized TiB whiskersHAIBO FENG; YU ZHOU; DECHANG JIA et al.Scripta materialia. 2006, Vol 55, Num 8, pp 667-670, issn 1359-6462, 4 p.Article

The stacking-fault tetrahedronKALONJI, G; CAHN, J. W.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1986, Vol 53, Num 4, pp 521-529, issn 0141-8610Article

Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopyHATTENDORF, S; GEORGI, A; LIEBMANN, M et al.Surface science. 2013, Vol 610, pp 53-58, issn 0039-6028, 6 p.Article

On the electron structure of Mn-, Ni- and Cr-Ni-Mn austenite with different stacking fault energyPETROV, Yu. N.Scripta materialia. 2005, Vol 53, Num 10, pp 1201-1206, issn 1359-6462, 6 p.Article

Effect of stacking fault energy on mechanical behavior of bulk nanocrystalline Cu and Cu alloysYOUSSEF, Khaled; SAKALIYSKA, Miroslava; BAHMANPOUR, Hamed et al.Acta materialia. 2011, Vol 59, Num 14, pp 5758-5764, issn 1359-6454, 7 p.Article

Effect of Co Replacement with Fe on Uniaxial Magnetocrystalline Anisotropy in Disordered hcp CoPtRh Alloy FilmsNOZAWA, Naoki; SAITO, Shin; HINATA, Shintaro et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 3596-3599, issn 0018-9464, 4 p.Conference Paper

Determination of the anisotropy field distribution in perpendicular media and its correlation with microstructure and recordingGANPING JU; BIN LU; WELLER, Dieter et al.IEEE transactions on magnetics. 2007, Vol 43, Num 2, pp 627-632, issn 0018-9464, 6 p., 2Conference Paper

Noise Mechanisms in Small Grain Size Perpendicular Thin Film MediaZHU, Jian-Gang; SOKALSKI, Vincent; YIMING WANG et al.IEEE transactions on magnetics. 2011, Vol 47, Num 1, pp 74-80, issn 0018-9464, 7 p., 1Conference Paper

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