Biexcitons in GaN and AlGaN epitaxial layersYAMADA, Yoichi.Proceedings - Electrochemical Society. 2004, pp 326-340, issn 0161-6374, isbn 1-56677-419-5, 15 p.Conference Paper

Pulse testing of GaN/AlGaN HEMTsBACA, A. G; KIM, Y. M; MARSH, P. F et al.Proceedings - Electrochemical Society. 2004, pp 435-440, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Sensors based on SiC-AIN MEMSDOPPALAPUDI, Dharanipal; MLCAK, Richard; CHAN, Jeffrey et al.Proceedings - Electrochemical Society. 2004, pp 287-299, issn 0161-6374, isbn 1-56677-419-5, 13 p.Conference Paper

Formation of nanoporous INP by electrochemical anodizationBUCKLEY, D. N; O'DWYER, C; LYNCH, R et al.Proceedings - Electrochemical Society. 2004, pp 103-117, issn 0161-6374, isbn 1-56677-419-5, 15 p.Conference Paper

III-V ternary bulk crystal growth technologyDUTTA, P. S.Proceedings - Electrochemical Society. 2004, pp 134-141, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Studies of electron trapping in III-nitridesCHERNYAK, Leonid; BURDETT, William; LOPATIUK, Olena et al.Proceedings - Electrochemical Society. 2004, pp 512-521, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Electrical properties of InN grown by molecular beam epitaxySCHAFF, William J; HAI LU; EASTMAN, Lester F et al.Proceedings - Electrochemical Society. 2004, pp 358-371, issn 0161-6374, isbn 1-56677-419-5, 14 p.Conference Paper

Photoelectrochemical investigation of the etching of GaN in H₃PO₄HEFFERNAN, C; BUCKLEY, D. N; O'RAIFEARTAIGH, C et al.Proceedings - Electrochemical Society. 2004, pp 552-563, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Numerical simulation of the anodic formation of nanoporous indium phosphideLYNCH, R; O'DWYER, C; CLANCY, I et al.Proceedings - Electrochemical Society. 2004, pp 85-95, issn 0161-6374, isbn 1-56677-419-5, 11 p.Conference Paper

Au/In₂ bonding of InP-based MOEMSSTRASSNER, M; DION, J; SAGNES, I et al.Proceedings - Electrochemical Society. 2004, pp 172-176, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Self oriented growth of GaN films on molten galliumHONGWEI LI; CHANDRASEKARAN, Hari; SUNKARA, Mahendra K et al.Proceedings - Electrochemical Society. 2004, pp 496-503, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Advances in characterization of III-nitrides by secondary ion mass spectrometryVAN LIERDE, Patrick; CHUNSHENG TIAN; HOCKETT, Rich A et al.Proceedings - Electrochemical Society. 2004, pp 535-539, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Growth of group III nitrides on various plane substratesAMANO, H; HONSHIO, A; AKASAKI, I et al.Proceedings - Electrochemical Society. 2004, pp 192-199, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Effective nitrogen doping of zinc oxideLEE, Se-Hee; YAN, Yanfa; YOON, Seokhyun et al.Proceedings - Electrochemical Society. 2004, pp 312-319, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

High performance GaN HEMTs for mmWave applicationsBOUTROS, K. S; REGAN, M; ROWELL, P et al.Proceedings - Electrochemical Society. 2004, pp 454-458, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Spin-polarization of excitons in GaNKURODA, Takamasa; TACKEUCHI, Atsushi; TANIGUCHI, Kazuyoshi et al.Proceedings - Electrochemical Society. 2004, pp 320-325, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Characterization of GaN Schottky barrier photodiodes with a low-temperature GaN cap layerLEE, M. L; SHEU, J. K; SU, Y. K et al.Proceedings - Electrochemical Society. 2004, pp 260-269, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Preparation of cubic silicon carbide with smooth surface on carbonized porous siliconKOMIYAMA, J; ABE, Y; SUZUKI, S et al.Proceedings - Electrochemical Society. 2004, pp 142-149, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Characterization of InGaAs self-mixing detectors for chirp, amplitude-modulated LADAR (CAML)GERHOLD, Mike; ALIBERTI, Keith; HONGEN SHEN et al.Proceedings - Electrochemical Society. 2004, pp 12-23, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

An innovative planarization technology for ultra high frequency InP/InGaAs heterojunction bipolar transistor (HBT) manufacturingZENG, X; CHANG, P. C; YAMAMOTO, J et al.Proceedings - Electrochemical Society. 2004, pp 44-50, issn 0161-6374, isbn 1-56677-419-5, 7 p.Conference Paper

4H-SiC planar MESFETs with F_max of 40 GHz without trapping effectHOON JOO NA; SANG YOUNG JUNG; JEONG HYUK YIM et al.Proceedings - Electrochemical Society. 2004, pp 441-445, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Growth, characterization, and application of high power III-nitride ultraviolet emittersHAN, J; JEON, S.-R; GHERASIMOVA, M et al.Proceedings - Electrochemical Society. 2004, pp 183-191, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Fabrication of group IIIi-nitride waveguides by inductively coupled plasma etchingLI, Ning; WAKI, Ichitaro; KUMTORNKITTIKUL, Chaiyasit et al.Proceedings - Electrochemical Society. 2004, pp 270-275, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Efeects of MESA etching processes on GaInP/GaAs triple barrier resonant tunneling diodesSUHARA, M; ASAOKA, N; FUKUMITSU, M et al.Proceedings - Electrochemical Society. 2004, pp 96-102, issn 0161-6374, isbn 1-56677-419-5, 7 p.Conference Paper

High output power GaAs-based vertical external cavity surface emitting lasers achieved by AuIn₂ solid liquid inter diffusion bondingDION, J; SAGNES, I; STRASSNER, M et al.Proceedings - Electrochemical Society. 2004, pp 177-181, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper