State-of-the-art program on compound semiconductors XXXIX; Nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV (Orlando FL, 12-17 October 2003)Kopf, R.F; Baca, A.G; Pearton, S.J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-391-1, X, 408 p, isbn 1-56677-391-1Conference Proceedings

Growth and characterization of high-Ge content SiGe virtual substratesERDTMANN, M; CARROLL, M; VINEIS, C. J et al.Proceedings - Electrochemical Society. 2003, pp 106-117, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

Effect of the intermetallic compounds on the joint strength of the optical moduleKIM, N. K; KIM, K. S; KIM, N. H et al.Proceedings - Electrochemical Society. 2003, pp 80-86, issn 0161-6374, isbn 1-56677-391-1, 7 p.Conference Paper

Electronic structure of GaNP: Insights from optical studiesBUYANOVA, I. A; CHEN, W. M; TU, C. W et al.Proceedings - Electrochemical Society. 2003, pp 390-399, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

High efficiency nitride leds for use in solid state lighting applicationsFISCHER, A. J; KOLESKE, D. D; ALLERMAN, A. A et al.Proceedings - Electrochemical Society. 2003, pp 182-187, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Growth and characterization of InGaN quantum dots in InGaN/GaN superlatticesLIU, Chuan-Pu; CHEN, Regime; LAI, Yan-Lin et al.Proceedings - Electrochemical Society. 2003, pp 16-20, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Growth of HgSe by electrochemical atomic layer epitaxy (EC-ALE)MATHE, M. K; COX, S. M; HAPPEK, U et al.Proceedings - Electrochemical Society. 2003, pp 73-79, issn 0161-6374, isbn 1-56677-391-1, 7 p.Conference Paper

Development of InGaAsN-based 1310 nm VCSELsCHANG, Y.-L; TAKEUCHI, T; SONG, Y.-K et al.Proceedings - Electrochemical Society. 2003, pp 33-44, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

Surface state characterization methods for SiO₂ on 4H-SiCLAROCHE, J. R; KIM, J; JOHNSON, J. W et al.Proceedings - Electrochemical Society. 2003, pp 282-291, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

Synthesis and characterization of ferromagnetic AlN and AlGaN layersFRAZIER, R. M; THALER, G. T; ZAVADA, J. M et al.Proceedings - Electrochemical Society. 2003, pp 384-389, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

High performance AlGaN/GaN HEMTs with recessed gateSANO, Yoshiaki; KAIFU, Katsuaki; MITA, Juro et al.Proceedings - Electrochemical Society. 2003, pp 298-305, issn 0161-6374, isbn 1-56677-391-1, 8 p.Conference Paper

Growth of MgCaO on GaNONSTINE, A. H; GILA, B. P; KIM, J et al.Proceedings - Electrochemical Society. 2003, pp 344-349, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

High energy and spatial resolution EELS from GaNARSLAN, I; OGUT, S; BROWNING, N. D et al.Proceedings - Electrochemical Society. 2003, pp 238-243, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Pitting and porous layer formation on n-InP anodesO'DWYER, C; BUCKLEY, D. N; SERANTONI, M et al.Proceedings - Electrochemical Society. 2003, pp 136-151, issn 0161-6374, isbn 1-56677-391-1, 16 p.Conference Paper

Cathodoluminescence studies of electron injection-induced effects in III-nitridesBURDETT, William; CHERNYAK, Leonid; OSINSKY, Andrei et al.Proceedings - Electrochemical Society. 2003, pp 196-200, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Fabrication, characterization and applications of AlInGaN light-emitting diodesCAO, X. A; ARTHUR, S. D; EBONG, A et al.Proceedings - Electrochemical Society. 2003, pp 224-237, issn 0161-6374, isbn 1-56677-391-1, 14 p.Conference Paper

Chemical sensing with GaN based devicesEICKHOFF, M; STEINHOFF, G; WEIDEMANN, O et al.Proceedings - Electrochemical Society. 2003, pp 321-326, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Optimization of GaMnN growth conditions for novel spintronic applicationsTHALER, G. T; FRAZIER, R. M; ABERNATHY, C. R et al.Proceedings - Electrochemical Society. 2003, pp 338-343, issn 0161-6374, isbn 1-56677-391-1, 6 p.Conference Paper

Growth and charactarization of high quality GaN on silicon(111)CHOU, Li-Jen; CHUEH, Y. L; CHIOU, S. Y et al.Proceedings - Electrochemical Society. 2003, pp 12-15, issn 0161-6374, isbn 1-56677-391-1, 4 p.Conference Paper

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structuresLAI, Yen-Lin; CHEN, Regime; LIU, Chuan-Pu et al.Proceedings - Electrochemical Society. 2003, pp 174-178, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Localized quantum state luminescence from wide bandgap ZnS and GaN thin filmsSHEPHERD, Nigel; KALE, Ajay; GLASS, William et al.Proceedings - Electrochemical Society. 2003, pp 244-269, issn 0161-6374, isbn 1-56677-391-1, 26 p.Conference Paper

Fabrication of n-TiO₂ thin films by SPD and electrooxidation methods for efficient photosplitting of waterSMITH, Shayna L; KHAN, Shahed U. M.Proceedings - Electrochemical Society. 2003, pp 87-96, issn 0161-6374, isbn 1-56677-391-1, 10 p.Conference Paper

In-situ chemical surface treatments for the removal of AlN/SiC interfacial contaminationSTODILKA, D. O; GILA, B. P; ABERNATHY, C. R et al.Proceedings - Electrochemical Society. 2003, pp 350-354, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Electric field modulation of ZnO film conductance in ZnO-based FET structuresKWON, Y; LI, Y; HEO, Y. W et al.Proceedings - Electrochemical Society. 2003, pp 68-72, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Polarity-selective chemical etching of GaN: From nanotip pyramids to photonic crystalsNG, Hock M; CHOWDHURY, Aref; PARZ, Wolfgang et al.Proceedings - Electrochemical Society. 2003, pp 3-11, issn 0161-6374, isbn 1-56677-391-1, 9 p.Conference Paper