State-of-the-art program on compound semiconductors XXXVIII; Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003)Stokes, E.B; Fitch, R.C; Chang, P.C et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-349-0, IX, 278 p, isbn 1-56677-349-0Conference Proceedings

Interconnect copper metallization of InGaP HBTs using WN_xas the diffusion barrierCHANG, Shang-Wen; YI CHANG, Edward; LEE, Cheng-Shih et al.Proceedings - Electrochemical Society. 2003, pp 33-37, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

A mechanistic study of anodic formation of porous InPO'DWYER, C; BUCKLEY, D. N; SUTTON, D et al.Proceedings - Electrochemical Society. 2003, pp 63-72, issn 0161-6374, isbn 1-56677-349-0, 10 p.Conference Paper

Effect of post oxidation annealing on VCSEL device performanceDAS, N. C; CHANG, W.Proceedings - Electrochemical Society. 2003, pp 15-18, issn 0161-6374, isbn 1-56677-349-0, 4 p.Conference Paper

Microcathodoluminescence characterization of III-V nitride heterojunctions and devicesBRILLSON, L. J; JESSEN, G. H; VAN NOSTRAND, J. E et al.Proceedings - Electrochemical Society. 2003, pp 229-234, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Physics of electron injection-induced effects in III-nitridesCHERNYAK, Leonid; BURDETT, William.Proceedings - Electrochemical Society. 2003, pp 208-213, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

AlGaN power rectifiersPEARTON, S. J; KIM, J; REN, F et al.Proceedings - Electrochemical Society. 2003, pp 180-207, issn 0161-6374, isbn 1-56677-349-0, 28 p.Conference Paper

Instabilities in GaN based FET devices: Nature and alternative structuresKOHN, E; NEUBURGER, M; DAUMILLER, I et al.Proceedings - Electrochemical Society. 2003, pp 174-179, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Diamond - the next generation material for high power electronics?ALEKSOV, A; SCHRECK, M; SCHMID, P et al.Proceedings - Electrochemical Society. 2003, pp 146-151, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Effects of composition and layer thickness on the magnetic and structural characteristics of GaMnNTHALER, G. T; OVERBERG, M; THEODOROPOULOU, N et al.Proceedings - Electrochemical Society. 2003, pp 141-145, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Mocvd growth of InP/InGaAlAs distributed bragg reflectorsTSAI, J. Y; LU, T. C; C.WANG, S et al.Proceedings - Electrochemical Society. 2003, pp 115-122, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Fabrication and characterization of GaN nanorodsCHANG, Ya-Hsien; KUO, H. C; YU, Chang-Chin et al.Proceedings - Electrochemical Society. 2003, pp 270-275, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Novel waveguide photodetectors on InP with integrated light amplificationPIPREK, J; PASQUARIELLO, D; LASAOSA, D et al.Proceedings - Electrochemical Society. 2003, pp 1-8, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

New spectroscopic data of erbium ions in GaN thin filmsPELLE, F; AUZEL, F; ZAVADA, J. M et al.Proceedings - Electrochemical Society. 2003, pp 235-257, issn 0161-6374, isbn 1-56677-349-0, 23 p.Conference Paper

Localized photoetching of n-InP, at open-circuit potentialDEBIEMME-CHOUVY, Catherine; QUENNOY, Anne; GERARD, Isabelle et al.Proceedings - Electrochemical Society. 2003, pp 83-90, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Infrared photocurrent spectroscopy of epitaxial III-nitride materialsSTOKES, Edward B; LEBOEUF, Steven F.Proceedings - Electrochemical Society. 2003, pp 265-269, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Deep ultraviolet light emitting diodes using AlGaN quantum well active regionASIF KHAN, M; SHATALOV, Maxim; ADIVARAHAN, Vinod et al.Proceedings - Electrochemical Society. 2003, pp 152-157, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Very low temperature growth of C-axis oriented ZNO thin film on SI substratesHYOUN WOO KIM; KWANG SIK KIM; LEE, Chongmu et al.Proceedings - Electrochemical Society. 2003, pp 123-129, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

Anodic behavior of InP: Film growth, porous structures and current oscillationsBUCKLEY, D. N; O'DWYER, C; HARVEY, E et al.Proceedings - Electrochemical Society. 2003, pp 48-62, issn 0161-6374, isbn 1-56677-349-0, 15 p.Conference Paper

(photo-)electrochemistry at n-GaN grown on sapphire and on Si: A comparitive studyHUYGENS, I. M; STRUBBE, K.Proceedings - Electrochemical Society. 2003, pp 103-114, issn 0161-6374, isbn 1-56677-349-0, 12 p.Conference Paper

Fabrication and NO₂ surface photo voltage sensor properties of nanoporous tin-silica filmYULIARTO, Brian; HAOSHEN ZHOU; YAMADA, Takeo et al.Proceedings - Electrochemical Society. 2003, pp 130-133, issn 0161-6374, isbn 1-56677-349-0, 4 p.Conference Paper

Characteristics of sulfur- and InGaP-passivated InGaP/GaAs heterojunction bipolar transistorsTAN, S. W; CHEN, W. T; CHU, M. Y et al.Proceedings - Electrochemical Society. 2003, pp 28-32, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Spectroscopic ellipsometry applied to the characterization of Gan and AlGaN/GaN hetero-structuresBOHER, P; BOURTAULT, S; PIEL, J. P et al.Proceedings - Electrochemical Society. 2003, pp 258-264, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

Investigation of defect passivation in 4H-SiC using hydrogen plasma and effect of post annealingMYUNG YOON UM; IN SANG JEON; DA IL EOM et al.Proceedings - Electrochemical Society. 2003, pp 91-97, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

Innovative substrate solutions for wide band gap materials: The smart cut<^TM> approachLETERTRE, F; DAVAL, N; TEMPLIER, F et al.Proceedings - Electrochemical Society. 2003, pp 223-228, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper