LEED analysis of a nickel cylindrical single crystalMOM, Rik V; HAHN, Christine; JACOBSE, Leon et al.Surface science. 2013, Vol 613, pp 15-20, issn 0039-6028, 6 p.Article

Instability of vicinal crystal surfaces with transparent steps: Transient kinetics and non-local electromigrationRANGUELOV, B; STOYANOV, S.Surface science. 2009, Vol 603, Num 18, pp 2915-2919, issn 0039-6028, 5 p.Article

Growth Law of Bunch Size in Step Bunching Induced by Flow in SolutionSATO, Masahide.Journal of the Physical Society of Japan. 2011, Vol 80, Num 2, issn 0031-9015, 024604.1-024604.4Article

Drift-induced step instabilities on Si(111) vicinal face near 1x1 ↔ 7x7 transition temperatureIKAWA, Kenta; SATO, Masahide; UWAHA, Makio et al.Journal of the Physical Society of Japan. 2007, Vol 76, Num 6, issn 0031-9015, 064602.1-064602.7Article

Thermal etching of SiCDER BERG, N. G. Van; MALHERBE, Johan B; BOTHA, A. J et al.Applied surface science. 2012, Vol 258, Num 15, pp 5561-5566, issn 0169-4332, 6 p.Article

The adsorption-induced thermal step-bunching on the hexagonal lattice systemAKUTSU, Noriko; KAKII, Yoshinari.Applied surface science. 2008, Vol 254, Num 23, pp 7535-7538, issn 0169-4332, 4 p.Conference Paper

Effect of two-dimensionality on step bunching on a Si(001) vicinal faceSATO, Masahide; UWAHA, Makio; HIROSE, Yukio et al.Journal of the Physical Society of Japan. 2006, Vol 75, Num 4, issn 0031-9015, 043601.1-043601.4Article

Step flow growth of vicinal (111)si surface at high temperatures: step kinetics or surface diffusion controlMETOIS, J. J; HEYRAUD, J. C; STOYANOV, S et al.Surface science. 2001, Vol 486, Num 1-2, pp 95-102, issn 0039-6028Article

Step Instabilities on Si(111) Vicinal Face near 1 x 1 ↔ 7 x 7 Transition Temperature during SublimationIKAWA, Kenta; SATO, Masahide.Journal of the Physical Society of Japan. 2009, Vol 78, Num 12, issn 0031-9015, 124602.1-124602.6Article

Kinetic step bunching instability during surface growthFRISCH, Thomas; VERGA, Alberto.Physical review letters. 2005, Vol 94, Num 22, pp 226102.1-226102.4, issn 0031-9007Article

Step bunching with alternation of structural parametersSATO, Masahide; UWAHA, Makio; MORI, Tomonori et al.Journal of the Physical Society of Japan. 2003, Vol 72, Num 11, pp 2850-2855, issn 0031-9015, 6 p.Article

Two-Dimensional Motion of Unstable Steps Induced by Flow in SolutionSATO, Masahide.Journal of the Physical Society of Japan. 2011, Vol 80, Num 7, issn 0031-9015, 074604.1-074604.6Article

Formation and morphology of step bunches during B-segregation on vicinal Si(111)BRUNS, Daniel; GEVERS, Sebastian; WOLLSCHLÄGER, Joachim et al.Surface science. 2011, Vol 605, Num 9-10, pp 861-867, issn 0039-6028, 7 p.Article

Effect of step permeability on step instabilities due to alternation of kinetic coefficients on a growing vicinal faceSATO, M.The European physical journal. B, Condensed matter physics. 2007, Vol 59, Num 3, pp 311-318, issn 1434-6028, 8 p.Article

Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure calculations : Surface reconstruction, steps, and bendingHOSHI, Takeo; IGUCHI, Yusuke; FUJIWARA, Takeo et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075323.1-075323.10, issn 1098-0121Article

Step wandering due to the structural difference of the upper and the lower terracesKATO, R; UWAHA, M; SAITO, Y et al.Surface science. 2004, Vol 550, Num 1-3, pp 149-165, issn 0039-6028, 17 p.Article

Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfacesNEUMANN, R; ZHU, J; BRUNNER, K et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 124-126, issn 0040-6090Conference Paper

Growth of step bunches formed by the drift of adatomsSATO, M; UWAHA, M.Surface science. 1999, Vol 442, Num 2, pp 318-328, issn 0039-6028Article

Behavior of the (0001) surface of sapphire upon high-temperature annealingPRIMOZ REBERNIK RIBIC; BRATINA, Gvido.Surface science. 2007, Vol 601, Num 1, pp 44-49, issn 0039-6028, 6 p.Article

Step mediated surface alloy formation of Pt/Cu(111)DASTOOR, P. C; O'CONNOR, D. J; MACLAREN, D. A et al.Surface science. 2005, Vol 588, Num 1-3, pp 101-107, issn 0039-6028, 7 p.Article

Atomistic modeling of step formation and step bunching at the Ge(105) surfaceCEREDA, S; MONTALENTI, F; MIGLIO, Leo et al.Surface science. 2005, Vol 591, Num 1-3, pp 23-31, issn 0039-6028, 9 p.Article

Anisotropy of mass transport on Si(001) surfaces heated with direct currentNIELSEN, J.-F; PETTERSEN, M. S; PELZ, J. P et al.Surface science. 2001, Vol 480, Num 1-2, pp 84-96, issn 0039-6028Article

Scaling properties of step bunches formed on vicinal crystal surfaces during MBE growthSTOYANOV, S.Surface science. 2000, Vol 464, Num 1, pp L715-L718, issn 0039-6028Article

Step formation on hydrogen-etched 6H-SiC{0001} surfacesNIE, S; LEE, C. D; FEENSTRA, R. M et al.Surface science. 2008, Vol 602, Num 17, pp 2936-2942, issn 0039-6028, 7 p.Article

What causes step bunching: negative Ehrlich-Schwoebel barrier versus positive incorporation barrierXIE, M. H; LEUNG, S. Y; TONG, S. Y et al.Surface science. 2002, Vol 515, Num 1, pp L459-L463, issn 0039-6028Article