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Man-made quantum structures: From superlattices to quantum dotsTSU, Raphael.Proceedings - Electrochemical Society. 2003, pp 134-140, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

State-of-the-art program on compound semiconductors XXXVIII; Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003)Stokes, E.B; Fitch, R.C; Chang, P.C et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-349-0, IX, 278 p, isbn 1-56677-349-0Conference Proceedings

Solvent-affected chemistry at GaAs/sulfide solution interfaceLEBEDEV, Mikhail V; MAYER, Thomas; JAEGERMANN, Wolfram et al.Proceedings - Electrochemical Society. 2003, pp 38-47, issn 0161-6374, isbn 1-56677-349-0, 10 p.Conference Paper

Mocvd growth of InP/InGaAlAs distributed bragg reflectorsTSAI, J. Y; LU, T. C; C.WANG, S et al.Proceedings - Electrochemical Society. 2003, pp 115-122, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Very low temperature growth of C-axis oriented ZNO thin film on SI substratesHYOUN WOO KIM; KWANG SIK KIM; LEE, Chongmu et al.Proceedings - Electrochemical Society. 2003, pp 123-129, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

Growth of anodic oxides on n-InP studied by electrochemistry and surface analysis. Correlation between oxidation methods and passivating propertiesSIMON, N; QUACH, N. C; ETCHEBERRY, A et al.Proceedings - Electrochemical Society. 2003, pp 73-82, issn 0161-6374, isbn 1-56677-349-0, 10 p.Conference Paper

Hrtem study of SiC buried layer formed by C+implantation in siliconYUMEI XING; YUEHUI YU; ZIXIN LIN et al.Proceedings - Electrochemical Society. 2003, pp 98-102, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Localized photoetching of n-InP, at open-circuit potentialDEBIEMME-CHOUVY, Catherine; QUENNOY, Anne; GERARD, Isabelle et al.Proceedings - Electrochemical Society. 2003, pp 83-90, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

Infrared photocurrent spectroscopy of epitaxial III-nitride materialsSTOKES, Edward B; LEBOEUF, Steven F.Proceedings - Electrochemical Society. 2003, pp 265-269, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Effect of post oxidation annealing on VCSEL device performanceDAS, N. C; CHANG, W.Proceedings - Electrochemical Society. 2003, pp 15-18, issn 0161-6374, isbn 1-56677-349-0, 4 p.Conference Paper

(photo-)electrochemistry at n-GaN grown on sapphire and on Si: A comparitive studyHUYGENS, I. M; STRUBBE, K.Proceedings - Electrochemical Society. 2003, pp 103-114, issn 0161-6374, isbn 1-56677-349-0, 12 p.Conference Paper

Physics of electron injection-induced effects in III-nitridesCHERNYAK, Leonid; BURDETT, William.Proceedings - Electrochemical Society. 2003, pp 208-213, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Diamond - the next generation material for high power electronics?ALEKSOV, A; SCHRECK, M; SCHMID, P et al.Proceedings - Electrochemical Society. 2003, pp 146-151, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Spectroscopic ellipsometry applied to the characterization of Gan and AlGaN/GaN hetero-structuresBOHER, P; BOURTAULT, S; PIEL, J. P et al.Proceedings - Electrochemical Society. 2003, pp 258-264, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

Interconnect copper metallization of InGaP HBTs using WNxas the diffusion barrierCHANG, Shang-Wen; YI CHANG, Edward; LEE, Cheng-Shih et al.Proceedings - Electrochemical Society. 2003, pp 33-37, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

A mechanistic study of anodic formation of porous InPO'DWYER, C; BUCKLEY, D. N; SUTTON, D et al.Proceedings - Electrochemical Society. 2003, pp 63-72, issn 0161-6374, isbn 1-56677-349-0, 10 p.Conference Paper

Deep ultraviolet light emitting diodes using AlGaN quantum well active regionASIF KHAN, M; SHATALOV, Maxim; ADIVARAHAN, Vinod et al.Proceedings - Electrochemical Society. 2003, pp 152-157, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Dc characteristics of AlGaN/GaN heterostructure field-effect transistors on free-standing GaN substratesIROKAWA, Y; LUO, B; REN, F et al.Proceedings - Electrochemical Society. 2003, pp 214-222, issn 0161-6374, isbn 1-56677-349-0, 9 p.Conference Paper

Improvement of kink characteristics of 850nm AlGaAs/GaAs implant vertical cavity emitting lasers utilizing silicon implantation induced disorderingKUO, H. C; LAI, Fang-I; HSUEH, Tao-Hung et al.Proceedings - Electrochemical Society. 2003, pp 9-14, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Observation of current GaIn collapse in large-area HBT with rectangular emitter and etched baseTSAI, M.-K; TAN, S.-W; LOUR, W.-S et al.Proceedings - Electrochemical Society. 2003, pp 24-27, issn 0161-6374, isbn 1-56677-349-0, 4 p.Conference Paper

Investigation of defect passivation in 4H-SiC using hydrogen plasma and effect of post annealingMYUNG YOON UM; IN SANG JEON; DA IL EOM et al.Proceedings - Electrochemical Society. 2003, pp 91-97, issn 0161-6374, isbn 1-56677-349-0, 7 p.Conference Paper

Effects of composition and layer thickness on the magnetic and structural characteristics of GaMnNTHALER, G. T; OVERBERG, M; THEODOROPOULOU, N et al.Proceedings - Electrochemical Society. 2003, pp 141-145, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Innovative substrate solutions for wide band gap materials: The smart cut<TM> approachLETERTRE, F; DAVAL, N; TEMPLIER, F et al.Proceedings - Electrochemical Society. 2003, pp 223-228, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Fabrication and characterization of GaN nanorodsCHANG, Ya-Hsien; KUO, H. C; YU, Chang-Chin et al.Proceedings - Electrochemical Society. 2003, pp 270-275, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Novel waveguide photodetectors on InP with integrated light amplificationPIPREK, J; PASQUARIELLO, D; LASAOSA, D et al.Proceedings - Electrochemical Society. 2003, pp 1-8, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper

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