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Zum Potentialverlauf in Metall-Halbleiter-Metall-Sandwichstrukturen = Répartition du potentiel dans une structure en sandwich métal-semiconducteur-métal = Potentiel repartition in a MSM structureZIEGLER, L; JANTOSS, W; HERMS, W et al.Wissenschaftliche Zeitschrift der Technischen Hochschule Otto von Guericke Magdeburg. 1984, Num 1, pp 136-141, issn 0541-8933Article

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New solution to the problem of bipolar injection in insulator and semiconductor devicesSWISTACZ, B.Archiv für Elektrotechnik (Berlin). 1995, Vol 78, Num 3, pp 189-194, issn 0003-9039Article

Properties of amorphous germanium tunnel barriersGIBSON, G. A; MESERVEY, R.Journal of applied physics. 1985, Vol 58, Num 4, pp 1584-1596, issn 0021-8979Article

Particularités de la cinétique de croissance du photocourant dans la structure métal-germanate de bismuth-métalKATSAVETS, N. I; LEONOV, E. I; SHADRIN, E. B et al.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 3, pp 589-594, issn 0044-4642Article

New method for grafting a thin film metal-semiconductor-metal photodetector with a transimpedance amplifier and applications to multichip module packagingMORRISON, C. B; ZHENG ZHU; STEINBERG, J et al.SPIE proceedings series. 1998, pp 16-22, isbn 0-8194-2727-6Conference Paper

Hybrid integrated optoelectronics : Thin film devices bonded to host substratesJOKERST, N. M.International journal of high speed electronics and systems. 1997, Vol 8, Num 2, pp 325-356Article