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Results 1 to 25 of 813

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Deep trench etching in macroporous siliconGEPPERT, T; SCHWEIZER, S. L; GÖSELE, U et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 84, Num 3, pp 237-242, issn 0947-8396, 6 p.Article

Galactosylated poly(N-isopropylacrylamide) hydrogel submicrometer particles for specific cellular uptake within hepatocytesSEUNG HO CHOI; JUN JIN YOON; TAE GWAN PARK et al.Journal of colloid and interface science. 2002, Vol 251, Num 1, pp 57-63, issn 0021-9797Article

Video microscope with submicrometer resolutionMECHELS, S; YOUNG, M.Applied optics. 1991, Vol 30, Num 16, pp 2202-2211, issn 0003-6935, 10 p.Article

Mounting an individual submicrometer sized single crystalNEDER, R. B; BURGHAMMER, M; GRASL, T et al.Zeitschrift für Kristallographie. 1996, Vol 211, Num 6, pp 365-367, issn 0044-2968Article

Reduction in the size of features of patterned SAMs generated by microcontact printing with mechanical compression of the stampYOUNAN XIA; WHITESIDES, G. M.Advanced materials (Weinheim). 1995, Vol 7, Num 5, issn 0935-9648, 433, 471-473 [4 p.]Article

Application of an x-ray stepper for subquarter micrometer fabricationYONG CHEN; HAGHIRI-GOSNET, A. M; DECANINI, D et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3243-3247, issn 1071-1023Conference Paper

Fabrication of submicrometer features on curved substrates by microcontact printingJACKMAN, R. J; WILBUR, J. L; WHITESIDES, G. M et al.Science (Washington, D.C.). 1995, Vol 269, Num 5224, pp 664-666, issn 0036-8075Article

Low voltage alternative for electron beam lithographyLEE, Y.-H; BROWNING, R; MALUF, N et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3094-3098, issn 1071-1023Conference Paper

Improved four-mirror optical system for deep-ultraviolet submicrometer lithographyJONG TAE KIM; HONG JIN KONG; SANG SOO LEE et al.Optical engineering (Bellingham. Print). 1993, Vol 32, Num 3, pp 536-541, issn 0091-3286Article

Successful definition of nanowire and porous Si regions of different porosity levels by regular positive photoresist using metal-assisted chemical etchingZAHEDINEJAD, Mohammad; KHAJE, Mahdi; ERFANIAN, Alireza et al.Journal of micromechanics and microengineering (Print). 2011, Vol 21, Num 6, issn 0960-1317, 065006.1-065006.8Article

Submicrometer displacement sensing using inner-product multimode fiber speckle fieldsYU, F. T. S; WEN, M; YIN, S et al.Applied optics. 1993, Vol 32, Num 25, pp 4685-4689, issn 0003-6935Article

Distant detection of submicrometre displacements and vibrations using laser diode module and fibre opticsELISEEV, P. G; TSOTSORIA, M. V.Soviet lightwave communications. 1991, Vol 1, Num 2, pp 147-154Article

Submicrosecond characteristics of lightning return-stroke currentsLETEINTURIER, C; HAMELIN, J. H; EYBERT-BERARD, A et al.IEEE transactions on electromagnetic compatibility. 1991, Vol 33, Num 4, pp 351-357, issn 0018-9375Article

Maskless, chemical etching of submicrometer gratings in single-crystalline GaAsPODLESNIK, D. V; GILGEN, H. H; OSGOOD, R. M. JR et al.Applied physics letters. 1983, Vol 43, Num 12, pp 1083-1085, issn 0003-6951Article

Fast stimulated diffusion : an optimization algorithm for multiminimum problems and its application to MOSFET model parameter extractionSAKURAI, T; BILL LIN; NEWTON, A. R et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 2, pp 228-234, issn 0278-0070Article

Quantum interference effects in semiconductors : a bibliographyGAYLORD, T. K; GLYTSIS, E. N; HENDERSON, G. N et al.Proceedings of the IEEE. 1991, Vol 79, Num 8, pp 1159-1180, issn 0018-9219Article

Strength of submicrometer diameter pillars of metallic glasses investigated with in situ transmission electron microscopyCHEN, C. Q; PEI, Y. T; DE HOSSON, J. Th. M et al.Philosophical magazine letters. 2009, Vol 89, Num 10, pp 633-640, issn 0950-0839, 8 p.Article

Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effectWOO-SUNG CHOI; FARIBORZ ASSADERAGHI; YOUNG-JUNE PARK et al.IEEE electron device letters. 1995, Vol 16, Num 7, pp 333-335, issn 0741-3106Article

Device modeling by radial basis functionsMEES, A. I; JACKSON, M. F; CHUA, L. O et al.IEEE transactions on circuits and systems. 1992, Vol 39, Num 1, pp 19-27, issn 0098-4094Article

Operation of submicrometre lateral bipolar transistors down to 10KJAYADEV, T. S; WOO, J. C. S; VERDONCKT-VANDEBROEK, S et al.Electronics Letters. 1991, Vol 27, Num 11, pp 998-1000, issn 0013-5194Article

Preparation of chitosan microfibres using electro-wet-spinning and their electroactuation propertiesCHANG KEE LEE; SEON JEONG KIM; KIM, Sun I et al.Smart materials and structures. 2006, Vol 15, Num 2, pp 607-611, issn 0964-1726, 5 p.Article

Optique submicronique : une nouvelle perspective pour l'optique intégrée = Submicronic opticDEREUX, A.Journées nationales de microélectronique et optoélectronique. 1999, 2Vol, 5 p.Conference Paper

Sub-0.1 μm NMOS transistors fabricated using laser-plasma point-source X-ray lithographyRITTENHOUSE, G. E; MANSFIELD, W. M; CIRELLI, R. A et al.IEEE electron device letters. 1995, Vol 16, Num 7, pp 322-324, issn 0741-3106Article

A laser-interference microscopy for sub-micron scalingYAMANISHI, Y; TAMURA, K; SHIMIZU, K et al.Chemical and pharmaceutical bulletin. 1994, Vol 42, Num 7, pp 1534-1535, issn 0009-2363Article

Submicron particle removal using ultrasonic cleaningKASHKOUSH, I; BUSNAINA, A.Particulate science and technology. 1993, Vol 11, Num 1-2, pp 11-24, issn 0272-6351Conference Paper

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