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Lateral encroachment of extrinsic-base dopant in submicrometer bipolar transistorsPONG-FEI LU; LI, G. P; TANG, D. D et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 496-498, issn 0741-3106Article

Design considerations of high-performance narrow-emitter bipolar transistorsTANG, D. D; TZE-CHIANG CHEN; CHING-TE CHUANG et al.IEEE electron device letters. 1987, Vol 8, Num 4, pp 174-176, issn 0741-3106Article

On the sidewall effects in submicrometer bipolar transistorsHURKX, G. A. M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 9, pp 1939-1946, issn 0018-9383Article

Deep trench etching in macroporous siliconGEPPERT, T; SCHWEIZER, S. L; GÖSELE, U et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 84, Num 3, pp 237-242, issn 0947-8396, 6 p.Article

Galactosylated poly(N-isopropylacrylamide) hydrogel submicrometer particles for specific cellular uptake within hepatocytesSEUNG HO CHOI; JUN JIN YOON; TAE GWAN PARK et al.Journal of colloid and interface science. 2002, Vol 251, Num 1, pp 57-63, issn 0021-9797Article

Studies of deep-submicrometer ultranarrow-track recording by composite simulation modelsXIAOBING LIANG; XUAN ZHANG; DAN WEI et al.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 1958-1962, issn 0018-9464, 5 p., 1Article

Video microscope with submicrometer resolutionMECHELS, S; YOUNG, M.Applied optics. 1991, Vol 30, Num 16, pp 2202-2211, issn 0003-6935, 10 p.Article

Design and experimental technology for 0.1-μm gate-length low-temperature operation FET'sSAI-HALASZ, G. A; WORDEMAN, M. R; CHANG, T. H. P et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 463-466, issn 0741-3106Article

High-accuracy physical modeling of submicrometer MOSFET'sWILSON, C. L; ROITMAN, P; BLUE, J. L et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 7, pp 1246-1258, issn 0018-9383Article

Application of an x-ray stepper for subquarter micrometer fabricationYONG CHEN; HAGHIRI-GOSNET, A. M; DECANINI, D et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3243-3247, issn 1071-1023Conference Paper

Mounting an individual submicrometer sized single crystalNEDER, R. B; BURGHAMMER, M; GRASL, T et al.Zeitschrift für Kristallographie. 1996, Vol 211, Num 6, pp 365-367, issn 0044-2968Article

Numerical modeling of hot carriers in submicrometer silico BJT'sHSIN-SHIUNG OU; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1533-1539, issn 0018-9383Article

Submicrometer Hall sensors for superparamagnetic nanoparticle detectionMIHAJLOVIC, Goran; PENG XIONG; VON MOLNAR, Stephan et al.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2400-2402, issn 0018-9464, 3 p.Conference Paper

A new LDD transistor with inverse-T gate structureTIAO-YUAN HUANG; YAO, W. W; MARTIN, R. A et al.IEEE electron device letters. 1987, Vol 8, Num 4, pp 151-153, issn 0741-3106Article

Low voltage alternative for electron beam lithographyLEE, Y.-H; BROWNING, R; MALUF, N et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3094-3098, issn 1071-1023Conference Paper

Designing fast on-chip interconnects for deep submicrometer technologiesHOSSAIN, Razak; VIGLIONE, Fabrizio; CAVALLI, Marco et al.IEEE transactions on very large scale integration (VLSI) systems. 2003, Vol 11, Num 2, pp 276-280, issn 1063-8210, 5 p.Article

Cross-type submicron Josephson junctions using SNS technology for Josephson voltage standard applicationsMAY, T; SCHUBERT, M; WENDE, G et al.IEEE transactions on applied superconductivity. 2003, Vol 13, Num 2, pp 142-145, issn 1051-8223, 4 p., 1Conference Paper

Successful definition of nanowire and porous Si regions of different porosity levels by regular positive photoresist using metal-assisted chemical etchingZAHEDINEJAD, Mohammad; KHAJE, Mahdi; ERFANIAN, Alireza et al.Journal of micromechanics and microengineering (Print). 2011, Vol 21, Num 6, issn 0960-1317, 065006.1-065006.8Article

Submicrometer displacement sensing using inner-product multimode fiber speckle fieldsYU, F. T. S; WEN, M; YIN, S et al.Applied optics. 1993, Vol 32, Num 25, pp 4685-4689, issn 0003-6935Article

Distant detection of submicrometre displacements and vibrations using laser diode module and fibre opticsELISEEV, P. G; TSOTSORIA, M. V.Soviet lightwave communications. 1991, Vol 1, Num 2, pp 147-154Article

Submicrosecond characteristics of lightning return-stroke currentsLETEINTURIER, C; HAMELIN, J. H; EYBERT-BERARD, A et al.IEEE transactions on electromagnetic compatibility. 1991, Vol 33, Num 4, pp 351-357, issn 0018-9375Article

0.1-μm gate-length pseudomorphic HEMT'sCHAO, P. C; TIBERIO, R. C; DUH, K.-H. G et al.IEEE electron device letters. 1987, Vol 8, Num 10, pp 489-491, issn 0741-3106Article

Hot-carrier drifts in submicrometer p-channel MOSFET'sWEBER, W; LAU, F.IEEE electron device letters. 1987, Vol 8, Num 5, pp 208-210, issn 0741-3106Article

Strength of submicrometer diameter pillars of metallic glasses investigated with in situ transmission electron microscopyCHEN, C. Q; PEI, Y. T; DE HOSSON, J. Th. M et al.Philosophical magazine letters. 2009, Vol 89, Num 10, pp 633-640, issn 0950-0839, 8 p.Article

Operation of submicrometre lateral bipolar transistors down to 10KJAYADEV, T. S; WOO, J. C. S; VERDONCKT-VANDEBROEK, S et al.Electronics Letters. 1991, Vol 27, Num 11, pp 998-1000, issn 0013-5194Article

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