Terahertz electromagnetic response of split ring resonatorsZIYU YAN; XUE JIANG; QINGLI ZHOU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7158, issn 0277-786X, isbn 0-8194-7402-9 978-0-8194-7402-5, 1Vol, 715811.1-715811.10Conference Paper

Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrateSAHA, Sudip; CASSIDY, Daniel T; THOMPSON, D. A et al.Journal of crystal growth. 2014, Vol 386, pp 183-189, issn 0022-0248, 7 p.Article

Active Mid-Infrared Plasmonic Beam Steering DevicesADAMS, D. C; RIBAUDO, T; THONGRATTANASIRI, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7756, issn 0277-786X, isbn 978-0-8194-8252-5, 775616.1-775616.7Conference Paper

High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrateARAI, M; FUJISAWA, T; KOBAYASHI, W et al.Electronics Letters. 2008, Vol 44, Num 23, pp 1359-1360, issn 0013-5194, 2 p.Article

Properties and applications of sn-doped single crystal thin film magneto-resistance elementsNISHIMURA, K; GOTO, H; YAMADA, S et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 3, 1102-1105Conference Paper

Extension of spectral range of Peltier cooled photodetectors to 16 μmPIOTROWSKI, A; PIOTROWSKI, J; GAWRON, W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7298, issn 0277-786X, isbn 978-0-8194-7564-0 0-8194-7564-5, 729824.1-729824.7, 2Conference Paper

GalnNAsSb/GaAs vertical cavity surface emitting lasers at 1534nmWISTEY, M. A; BANK, S. R; BAE, H. P et al.Electronics Letters. 2006, Vol 42, Num 5, pp 282-283, issn 0013-5194, 2 p.Article

Metal resistor bolometer on GaAs substrateMACHA, P; RYC, L.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 618005.1-618005.4, issn 0277-786X, isbn 0-8194-6236-5, 1VolConference Paper

A novel bi-directional step-flow growth mode : C₆₀ on Ge(100) and GaAs(110)DUNPHY, J. C; KLYACHKO, D; XU, H et al.Surface science. 1997, Vol 383, Num 2-3, pp L760-L765, issn 0039-6028Article

Sub-monolayer coverages of Be grown on GaAs(001)-c(4 × 4) and (2 × 4)-β by molecular beam epitaxy studied by reflectance anisotropy and reflection high-energy electron diffractionROSE, K. C; WOOLF, D. A; MORRIS, S. J et al.Applied surface science. 1996, Vol 103, Num 1, pp 71-78, issn 0169-4332Article

Sb-based quantum dots for creating novel light-emitting devices for optical communicationsYAMAMOTO, Naokatsu; AKAHANE, Kouichi; GOZU, Shin-Ichirou et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63930A.1-63930A.9, issn 0277-786X, isbn 0-8194-6491-0, 1VolConference Paper

Controlled anisotropic ordering of Be deposited on the GaAs(001) surfaceOIGAWA, H; WASSERMEIER, M; BEHREND, J et al.Surface science. 1998, Vol 399, Num 1, pp 39-48, issn 0039-6028Article

Improvement of InP crystal quality grown on GaAs substrates and device applicationsKIMURA, T; KIMURA, T; KIMURA, T; KIMURA, T; ISHIMURA, E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 827-831, issn 0022-0248Conference Paper

VISIBLE GAAIAS V-CHANNELED SUBSTRATE INNER STRIPE LASER WITH STABILIZED MODE USING P-GAAS SUBSTRATEYAMAMOTO S; HAYASHI H; YANO S et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 372-374; BIBL. 10 REF.Article

Interdiffusion between InAs quantum dots and GaAs matricesHAGA, T; KATAOKA, M; MATSUMURA, N et al.Japanese journal of applied physics. 1997, Vol 36, Num 8B, pp L1113-L1115, issn 0021-4922, 2Article

Structures patterning by non-contact NSOM lithographyKUBICOVA, Ivana; PUDIS, Dušan; SUSLIK, L'uboš et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7746, issn 0277-786X, isbn 978-0-8194-8236-5, 774616.1-774616.6Conference Paper

Active Control of Propagating Waves on Plasmonic SurfacesRIBAUDO, T; SHANER, E. A; HOWARD, S. S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7221, issn 0277-786X, isbn 978-0-8194-7467-4 0-8194-7467-3, 1Vol, 72210P.1-72210P.10Conference Paper

Phase transition of cadmium selenide thin films in MOCVD growth processJU, Z. G; LU, Y. M; SHAN, C. X et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 1, issn 0022-3727, 015304.1-015304.4Article

Perpendicular magnetization in Fe/Ni bilayers on GaAs(001)PRZYBYLSKI, M; CHAKRABORTY, S; KIRSCHNER, J et al.Journal of magnetism and magnetic materials. 2001, Vol 234, Num 3, pp 505-519, issn 0304-8853Article

Characterization of rapid thermal oxidation of AlAs on GaAs/AlGaAs structureNG, S. L; OOI, B. S; LAM, Y. L et al.Surface and interface analysis. 2000, Vol 29, Num 1, pp 33-37, issn 0142-2421Article

Direct Ga deposition by low-energy focused ion-beam systemCHIKYOW, T; KOGUCHI, N; SHIKANAI, A et al.Surface science. 1997, Vol 386, Num 1-3, pp 254-258, issn 0039-6028Conference Paper

MOCVD growth of Ga₂Se₃ on GaAs(100) and GaP(100) : a Raman studyVON DER EMDE, M; ZAHN, D. R. T; NG, T et al.Applied surface science. 1996, Vol 104-05, pp 575-579, issn 0169-4332Conference Paper

Continuously operated visible-light-emitting lasers using liquid-phase-epitaxial InGaPAs grown on GaAs substratesMUKAI, S; YAJIMA, H; MITSUHASHI, Y et al.Applied physics letters. 1983, Vol 43, Num 1, pp 24-26, issn 0003-6951Article

Gas source MBE grown Al_0.52In_0.48P photovoltaic detectorLI, C; ZHANG, Y. G; GU, Y et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 501-503, issn 0022-0248, 3 p.Conference Paper

Electromagnetic propagation anisotropy of A Bi-layers Metamaterial at Terahertz BandWEN, Qi-Ye; ZHANG, Huai-Wu; XIE, Yun-Song et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7277, issn 0277-786X, isbn 978-0-8194-7536-7, 72770A.1-72770A.7Conference Paper