kw.\*:("Substrat semiconducteur")
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Heterojunction phototransistors on n-channelled semi-insulating InP substratesKOREN, U; PENNA, T. C; TIEN, P. K et al.Electronics Letters. 1985, Vol 21, Num 8, pp 346-347, issn 0013-5194Article
The influence of He addition on Cl-etching procedure for Si-nanoscale structure fabrication using reactive ion etching systemJUNG, M. Y; CHOI, S. S; KIM, J. W et al.Surface science. 2001, Vol 482-85, pp 1119-1124, issn 0039-6028, 2Conference Paper
Coplanar Schottky variable phase shifter constructed on GaAs substrate for millimeter-wave applicationFUKUOKA, Y; ITOH, T.International journal of infrared and millimeter waves. 1984, Vol 5, Num 6, pp 793-801, issn 0195-9271Article
ZnO films on {001}-cut <110>-propagation GaAs substrates for surface acoustic wave device applications : Thin films for acoustoelectronicsKIM, Y; HUNG, W. D; HICKERNELL, F. S et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 1995, Vol 42, Num 3, pp 351-361, issn 0885-3010Article
A semiconducting Langmuir-Blodgett film of non-amphiphilic bis-tetrathiafulvalene derivativePARG, R. P; KILBURN, J. D; PETTY, M. C et al.Journal of material chemistry. 1995, Vol 5, Num 10, pp 1609-1615, issn 0959-9428Article
GaAs light-emitting diodes fabricated on Ge-coated Si substratesFLETCHER, R. M; WAGNER, D. K; BALLANTYNE, J. M et al.Applied physics letters. 1984, Vol 44, Num 10, pp 967-969, issn 0003-6951Article
The electric-field problem of an interdigital transducer in a multilayered structureVAN DEN BERG, P. M; GHIJSEN, W. J; VENEMA, A et al.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 2, pp 121-129, issn 0018-9480Article
Integrated optical spectrum analyser using planar technology on oxidised silicon substrateVALETTE, S; LIZET, J; MOTTIER, P et al.Electronics Letters. 1983, Vol 19, Num 21, pp 883-885, issn 0013-5194Article
Integrated optoelectronic devicesMATSUEDA, H; TANAKA, T. P.Hitachi review. 1984, Vol 33, Num 4, pp 209-214, issn 0018-277XArticle
TiSi2 integration in a submicron CMOS process. II: Integration issuesKALNITSKY, A; BRUN, N; BRUN, A et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp 1992-1996, issn 0013-4651Article
Electron acoustic signal of metallic layers over a semiconductor substrateBRESSE, J. F.Journal of applied physics. 1992, Vol 71, Num 10, pp 4678-4683, issn 0021-8979Article
Growth mode transitions in Si molecular beam epitaxy on (100) and (111) substrate surfacesISHIZAKA, A.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 64, Num 2, pp 219-232, issn 0958-6644Article
Principles of strip-coupled SAW memory correlatorsWAGERS, R. S.IEEE transactions on sonics and ultrasonics. 1985, Vol 32, Num 5, pp 716-727, issn 0018-9537Article
ORIENTATION DES ELEMENTS DES MICROCIRCUITS A SUPPORTS D'ARSENIURE DE GALLIUMBULATOV OS; POPKOVA LI; CHEREPOVSKAYA AV et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 366-367; BIBL. 3 REF.Serial Issue
THE RETENTION OF FLUORINE BY SILICON SURFACES: INTERACTION WITH GOLD-REFRACTORY TRANSISTOR METALLIZATIONS.DAY H; CHRISTOU A; BRESSAN DJ et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 790-792; BIBL. 10 REF.Article
METHODOLOGY OF ELLIPSOMETRIC MEASUREMENTS OF THE SI-SIO2 DOUBLE LAYER SYSTEM ON SILICON.KRUSZEWSKI J; GUTKOWSKI M.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 2; PP. 131-134; ABS. RUSSE; BIBL. 5 REF.Article
FABRICATION AND CHARACTERISTICS OF MOS-FET'S INCORPORATING ANODIC ALUMINUM OXIDE IN THE GATE STRUCTURE.RAYMOND RK; DAS MB.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 181-189; H.T. 1; BIBL. 18 REF.Article
SUR L'APPLICATION DES CONTACTS METAL-SEMICONDUCTEUR POUR L'ETUDE DES DEFAUTS DES COUCHES DIELECTRIQUES SUR LES SEMICONDUCTEURSBUZANEVA EV; DENISYUK VA; STRIKHA VI et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 3; PP. 239-243; BIBL. 4 REF.Serial Issue
ENTWICKLUNGSRICHTUNGEN BEI GERAETEN ZUR MIKROSTRUKTURERZEUGUNG = TENDANCES DE L'EVOLUTION DES APPAREILS POUR LA FABRICATION DES MICROSTRUCTURESGOMMEL KW.1979; FEINGERAETETECHNIK; ISSN 0014-9683; DDR; DA. 1979; VOL. 28; NO 10; PP. 446-450Article
THE ANALYSIS OF ANODIC OXIDE FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE TRACER TECHNIQUES.VERPLANKE JC; TIJBURG RP.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 802-804; BIBL. 9 REF.Article
Comment on: Nm-sized metal particles on a semiconductor surface, Schottky model, etc. Author's replyIOANNIDES, Theophilos; ZHDANOV, Vladimir P.Surface science. 2003, Vol 530, Num 3, pp 216-220, issn 0039-6028, 5 p.Article
Nanopatterning of alkynes on hydrogen-terminated silicon surfaces by scanning probe-induced cathodic electrograftingHURLEY, Patrick T; RIBBE, Alexander E; BURIAK, Jillian M et al.Journal of the American Chemical Society. 2003, Vol 125, Num 37, pp 11334-11339, issn 0002-7863, 6 p.Article
DC and periodic reverse electroplating of semiconductor surfaces having adjacent p-type and n-type areasKARMALKAR, S; VENKATASUBRAMANIAN, N; OAK, Stimit et al.Journal of the Electrochemical Society. 2002, Vol 149, Num 8, pp C429-C431, issn 0013-4651Article
HCl, H2, and Cl2 radical-beam ion-beam etching of AlxGa1-xAs substrates with varying Al mole fractionSKIDMORE, J. A; LISHAN, D. G; YOUNG, D. B et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2720-2724, issn 1071-1023Conference Paper
Low-loss antiresonant reflecting optical waveguide on Si substrate in visible-wavelength regionKOKUBUN, Y; BABA, T; SAKAKI, T et al.Electronics Letters. 1986, Vol 22, Num 17, pp 892-893, issn 0013-5194Article