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Electrical characterization techniques for semiconductor-silicon dioxide interface: A reviewDEEN, M. Jamal.Proceedings - Electrochemical Society. 2003, pp 3-21, issn 0161-6374, isbn 1-56677-347-4, 19 p.Conference Paper

Conduction modeling of thick double-layer nitride/oxide dielectricsEVSEEV, S.Proceedings - Electrochemical Society. 2003, pp 573-588, issn 0161-6374, isbn 1-56677-347-4, 16 p.Conference Paper

Properties of ultrathin high-κ dielectrics on SI probed by electron spin resonance-active defects: Interfaces and interlayersSTESMANS; AFANAS'EV, V. V.Proceedings - Electrochemical Society. 2003, pp 66-78, issn 0161-6374, isbn 1-56677-347-4, 13 p.Conference Paper

A review of defect generation in the SiO2 and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

Modeling and electrical characterization of MOS structures with ultra thin gate oxideCLERC, R; GHIBAUDO, G.Proceedings - Electrochemical Society. 2003, pp 551-572, issn 0161-6374, isbn 1-56677-347-4, 22 p.Conference Paper

Si-SiO2 interface trap properties and depedence with oxide thickness and with electrical stress in mosfets with oxides in the 1-2 nanometer rangeBAUZA, D; RAHMOUNE, F.Proceedings - Electrochemical Society. 2003, pp 22-38, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Electronically active defects in ultra-thin oxynitride gate dielectricsBUCHANAN, D. A.Proceedings - Electrochemical Society. 2003, pp 328-340, issn 0161-6374, isbn 1-56677-347-4, 13 p.Conference Paper

Stabilities and electronic states of incorporated nitrogen atoms at the interface of SiO2/Si(001)YAMASAKI, Takahiro; KANETA, Chioko.Proceedings - Electrochemical Society. 2003, pp 308-314, issn 0161-6374, isbn 1-56677-347-4, 7 p.Conference Paper

Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)Sah, R.E; Deen, M.J; Landheer, D et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-347-4, XII, 636 p, isbn 1-56677-347-4Conference Proceedings

Recovery and reversibility of electrical instabilities in double-layer dielectric filmsEVSEEV, S; CACCIATO, A.Proceedings - Electrochemical Society. 2003, pp 605-613, issn 0161-6374, isbn 1-56677-347-4, 9 p.Conference Paper

Novel germanium technology and devices for high performance mosfets and integrated on-chip optical clockingSARASWAT, Krishna C; CHI ON CHUI; MCINTYRE, Paul C et al.Proceedings - Electrochemical Society. 2003, pp 55-65, issn 0161-6374, isbn 1-56677-347-4, 11 p.Conference Paper

Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Analysis of short-channel mosfet behavior after gate oxide breakdown and its impact on digital circuit reliabilityGROESENEKEN, G; KACZER, B; DEGRAEVE, R et al.Proceedings - Electrochemical Society. 2003, pp 173-198, issn 0161-6374, isbn 1-56677-347-4, 26 p.Conference Paper

Properties of annealed silicon oxynitride layers for optical applicationsWÖRHOFF, K; HUSSEIN, G. M; ROELOFFZEN, C. G. H et al.Proceedings - Electrochemical Society. 2003, pp 406-417, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

Improved performance with low temperature silicon nitride spacer processREDDY, Chandra M; ANDERSON, Steven G. H.Proceedings - Electrochemical Society. 2003, pp 241-248, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Atomistic characterization of radical nitridation process on Si(100) surfacesYASUDA, Yukio; SAKAI, Akira; ZAIMA, Shigeaki et al.Proceedings - Electrochemical Society. 2003, pp 495-506, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper

A neutron reflectivity study of silicon oxide thin filmsBERTAGNA, Valérie; MENELLE, Alain; PETITDIDIER, Sébastien et al.Proceedings - Electrochemical Society. 2003, pp 525-532, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Dipoles in SiO2: Border traps or not?FLEETWOOD, D. M; RASHKEEV, S. N; LU, Z. Y et al.Proceedings - Electrochemical Society. 2003, pp 291-307, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper

Comparison of contamination effects in silicon oxide with that in hafnium oxide and zirconium oxide gate dielectricsSHADMAN, F; RAGHU, P; RANA, N et al.Proceedings - Electrochemical Society. 2003, pp 131-138, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Hydrogenated amorphous silicon nitride deposited by DC magnetron sputteringMOKEDDEM, K; SAYHI, M; AOUCHER, M et al.Proceedings - Electrochemical Society. 2003, pp 396-405, issn 0161-6374, isbn 1-56677-347-4, 10 p.Conference Paper

Characterization of mis tunnel junctions by inelastic electron tunneling spectroscopy (IETS)PETIT, C; SALACE, G; VUILLAUME, D et al.Proceedings - Electrochemical Society. 2003, pp 622-626, issn 0161-6374, isbn 1-56677-347-4, 5 p.Conference Paper

Nitrogen content and interface trap reduction in SIO2/4H-SICMCDONALD, K; WELLER, R. A; PANTELIDES, S. T et al.Proceedings - Electrochemical Society. 2003, pp 341-347, issn 0161-6374, isbn 1-56677-347-4, 7 p.Conference Paper

Optimum structure of deposited ultra thin silicon oxynitride film to minimize leakage currentMURAOKA, Kouichi; KURIHARA, Kazuaki; YASUDA, Naoki et al.Proceedings - Electrochemical Society. 2003, pp 418-432, issn 0161-6374, isbn 1-56677-347-4, 15 p.Conference Paper

Mosfet degradation with reverse biased source and drain during high-field injection through thin gate oxidePATEL, B; JARWAL, R. K; MISRA, D et al.Proceedings - Electrochemical Society. 2003, pp 541-548, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Decoupled plasma nitridation of ultra-thin gate oxides for 60-90 nm technologiesBIDAUD, M; CARRERE, J-P; BOEUF, F et al.Proceedings - Electrochemical Society. 2003, pp 517-524, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

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