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Results 1 to 25 of 15553

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End electronic states in Cu chains on Cu(111) : Ab initio calculationsSTEPANYUK, V. S; KLAVSYUK, A. N; NIEBERGALL, L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153407.1-153407.4, issn 1098-0121Article

Exciton fractional dimension in semiconductor heterostructures arising from variational principleESCORCIA, R. A; SIERRA-ORTEGA, J; MIKHAILOV, I. D et al.Physica. B, Condensed matter. 2005, Vol 355, Num 1-4, pp 255-263, issn 0921-4526, 9 p.Article

MIES and UPS(HeI) studies on reduced TiO2(110)KRISCHOK, S; GÜNSTER, J; GOODMAN, D. W et al.Surface and interface analysis. 2005, Vol 37, Num 1, pp 77-82, issn 0142-2421, 6 p.Article

Reduction of amplitude and wavelength of Friedel oscillation on Na(111) surfaceSUN, Y. Y; HUAN, A. C. H; FENG, Y. P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153404.1-153404.4, issn 1098-0121Article

Effective mass enhancement in two-dimensional electron systems: the role of interaction and disorder effectsASGARI, R; DAVOUDI, B; TANATAR, B et al.Solid state communications. 2004, Vol 130, Num 1-2, pp 13-17, issn 0038-1098, 5 p.Article

Surface and interface analysis for copper phthalocyanine (CuPc) and indium-tin-oxide (ITO) using X-ray photoelectron spectroscopy (XPS)DAISHUN ZHENG; ZHAOYANG GAO; XIYUAN HE et al.Applied surface science. 2003, Vol 211, Num 1-4, pp 24-30, issn 0169-4332, 7 p.Article

Triple-, double-, and fractionally-spaced Wannier-Stark laddersONIPKO, Alexander; MALYSHEVA, Lyuba.Solid state communications. 2001, Vol 118, Num 2, pp 63-67, issn 0038-1098Article

Detection of interface states correlated with SiO2/Si(111) interface structuresWATANABE, N; TERAMOTO, Y; OMURA, A et al.Applied surface science. 2000, Vol 166, pp 460-464, issn 0169-4332Conference Paper

Landau levels in the presence of a potential barrierFERREYRA, J. M; PROETTO, C. R.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 33, pp 6623-6636, issn 0953-8984Article

Overlap effects on surface statesDAVISON, S. G; SULSTON, K. W.Progress in surface science. 2003, Vol 74, Num 1-8, pp 201-208, issn 0079-6816, 8 p.Article

Penetration of electronic states from silicon substrate into silicon oxideTAKAHASHI, K; SEMAN, M. B; HIROSE, K et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 56-59, issn 0169-4332Conference Paper

Interactions of self-organised discotic liquid crystals with ultrathin metal filmsPECCHIA, A; KELSALL, R. W; MOVAGHAR, B et al.Materials science and technology. 2002, Vol 18, Num 7, pp 729-732, issn 0267-0836Conference Paper

Excitation energy profile of the SH intensity from a glass-Au interfaceTANAKA, H; WAKIMOTO, H; MIYAZAKI, T et al.Surface science. 1999, Vol 427-28, pp 147-151, issn 0039-6028Conference Paper

A study of interface state density between a-Si:H and insulating layer in terms of plasma surface reactionUMEZU, I; TSUCHIDA, T; MAEDA, K et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1235-1239, issn 0022-3093, bConference Paper

Low-energy properties of two-dimensional fermions with long-range current-current interactionsKHVESHCHENKO, D. V; STAMP, P. C. E.Physical review letters. 1993, Vol 71, Num 13, pp 2118-2121, issn 0031-9007Article

Slab calculations and Green's function recursive methods combined to study the electronic structure of surfaces : applicationSANCHEZ-PORTAL, Daniel.Progress in surface science. 2007, Vol 82, Num 4-6, pp 313-335, issn 0079-6816, 23 p.Article

ARPES study of the surface states from Au/Ag(111): evolution with coverage and photon energyPALOMARES, F. J; SERRANO, M; RUIZ, A et al.Surface science. 2002, Vol 513, Num 2, pp 283-294, issn 0039-6028Article

Atomic and electronic structures of Si(113)1 x 1-Sb surface: core-level shifts and surface statesAN, K. S; HWANG, C. C; KIM, Y. K et al.Surface science. 2002, Vol 513, Num 1, pp 49-56, issn 0039-6028Article

La transition métal-isolant en dimension deux = Metal-insulator transition in two dimensionsImages de la physique. 2001, pp 13-19, issn 0290-0041, 7 p.Article

Microscopic characterization of defects using scanning tunneling microscopySTIEVENARD, D.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 120-127, issn 0921-5107Conference Paper

An ab initio calculation of the adsorption of H2S onto InP(110)-(1 x 1) surfaceCAKMAK, M; SRIVASTAVA, G. P.Applied surface science. 1998, Vol 123-24, pp 52-55, issn 0169-4332Conference Paper

Model effective-mass hamiltonians for abrupt degraded heterojunctionsBREZINI, A; SEBBANI, M; MAROUF, S et al.Physica status solidi. B. Basic research. 1995, Vol 189, Num 2, pp 389-399, issn 0370-1972Article

Valence electron structure analysis of crystalline orientation in plasma-sprayed TiO2 coatingsZHANG, Jian-Min; XU, Ke-Wei.Applied surface science. 2004, Vol 221, Num 1-4, pp 1-3, issn 0169-4332, 3 p.Article

Long-wavelength behavior of the dynamical spin-resolved local-field factor in a two-dimensional electron liquidZHIXIN QIAN.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235118.1-235118.3, issn 1098-0121Article

Etude des propriétés électroniques des interfaces Ag/Si(100) et Cu/Si(100) = Electronic properties of Ag/Si(100) and Cu/Si(100) interfacesGuillet, Stéphane; Lopez-Rios, Thomas.1993, 183 p.Thesis

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