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Corrosion and cell adhesion behavior of TiN-coated and ion-nitrided titanium for dental applicationsHUANG, Her-Hsiung; HSU, Chu-Hui; PAN, Szu-Jung et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 252-256, issn 0169-4332, 5 p.Conference Paper

EXAFS investigation of laser nitridation and laser carburization of siliconCARPENE, E; FLANK, A. M; TRAVERSE, A et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 12, pp 1428-1432, issn 0022-3727Article

AFM and XPS studies of a homoepitaxial diamond (001) surface nitrided using 500-eV N+2 ion beamKUSUNOKI, I; IGARI, Y; ISHIDZUKA, S et al.Diamond and related materials. 2001, Vol 10, Num 9-10, pp 1676-1680, issn 0925-9635Conference Paper

The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on siliconLU, H. C; GUSEV, E; YASUDA, N et al.Applied surface science. 2000, Vol 166, pp 465-468, issn 0169-4332Conference Paper

An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogenHILL, P; LU, J; HAWORTH, L et al.Applied surface science. 1998, Vol 123-24, pp 126-130, issn 0169-4332Conference Paper

Diffusion-reaction mechanisms of nitriding species in SiO2ORELLANA, W; DA SILVA, Antonio J. R; FAZZIO, A et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 12, pp 125206.1-125206.7, issn 1098-0121Article

Nitridation of InP(100) surface studied by AES and eels spectroscopiesOULD-METIDJI, Y; BIDEUX, L; MATOLIN, V et al.Vacuum. 2001, Vol 63, Num 1-2, pp 229-232, issn 0042-207XArticle

Chemical interaction of NF3 ion beams and plasmas with Si (part I): X-ray photoelectron spectroscopy studiesLITTLE, T. W; OHUCHI, F. S.Surface science. 2000, Vol 445, Num 2-3, pp 235-242, issn 0039-6028Article

Chemical interaction of NF3 with Si (part II) : Density functional calculation studiesENDOU, A; LITTLE, T. W; YAMADA, A et al.Surface science. 2000, Vol 445, Num 2-3, pp 243-248, issn 0039-6028Article

Nitridation of InAs(1 0 0) surface in a flowing NH3 : Formation of InNas?YAMAMOTO, A; SHIN-YA, T; SUGIURA, T et al.Journal of crystal growth. 1998, Vol 189-90, pp 476-480, issn 0022-0248Conference Paper

Oxynitridation of silicon using helicon-wave excited and inductively-coupled nitrogen plasmaOKAMOTO, Y; KIMURA, S; IKOMA, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 805-812, issn 0021-4922, 1Article

Silicon oxynitridation with inductively coupled oxygen-nitrogen mixed plasmaITO, T; KITAYAMA, D; IKOMA, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 612-616, issn 0021-4922, 1Article

Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectricsLEE, K.-C; HWU, J.-G.Applied surface science. 1996, Vol 92, Num 1-4, pp 204-207, issn 0169-4332Conference Paper

Nitridation of TiSi2 thin films by rapid thermal processingPEREZ-RIGUEIRO, J; JIMENEZ, C; VAZQUEZ, L et al.Surface & coatings technology. 1996, Vol 80, Num 1-2, pp 72-75, issn 0257-8972Conference Paper

The common component effect in multicomponent, multiphase equilibrium systemsNING HE; GE WANG; RAPP, R. A et al.High temperature and materials science. 1995, Vol 34, Num 1-3, pp 117-125, issn 1080-1278Conference Paper

Dependence of nitriding degree of Ti surface by non-LTE nitrogen plasma on various plasma parametersKOBORI, H; KOIKE, S; WATANABE, S et al.Thin solid films. 2004, Vol 457, Num 1, pp 69-77, issn 0040-6090, 9 p.Conference Paper

Study on compound layer formed during plasma nitrocarburizing of AISI 5140 steelALSARAN, A; KARAKAN, M; CELIK, A et al.Journal of materials science letters. 2003, Vol 22, Num 24, pp 1759-1761, issn 0261-8028, 3 p.Article

Reactive surface processing by irradiation with excimer laser, Nd:YAG laser, free electron laser and Ti:sapphire laser in nitrogen atmosphereCARPENE, E; SCHAAF, P; HAN, M et al.Applied surface science. 2002, Vol 186, Num 1-4, pp 195-199, issn 0169-4332Conference Paper

Study of InP(100) surface nitridation by x-ray photoelectron spectroscopyBIDEUX, L; OULD-METIDJI, Y; GRUZZA, B et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 712-715, issn 0142-2421Conference Paper

Cathode sputtering as a pre-treatment for gas nitridingBARANOWSKA, J; SZCZECINSKI, K; WYSIECKI, M et al.Vacuum. 2001, Vol 63, Num 4, pp 517-522, issn 0042-207XConference Paper

Nanometer-scale solute segregation at heterophase interfaces and microstructural evolution of molybdenum nitride precipitatesISHEIM, Dieter; SIEM, Ellen J; SEIDMAN, David N et al.Ultramicroscopy. 2001, Vol 89, Num 1-3, pp 195-202, issn 0304-3991Conference Paper

Formation of vanadium nitride by rapid thermal processingGALESIC, I; KOLBESEN, B. O.Thin solid films. 1999, Vol 349, Num 1-2, pp 14-18, issn 0040-6090Article

X-ray photoelectron study in the initial stage of oxynitridation process by excited nitrogen and oxygenSAITO, Y; IGUCHI, S.Applied surface science. 1998, Vol 130-32, pp 187-191, issn 0169-4332Conference Paper

AES analysis of nitridation of Si(100) by 2-10 keV N2+ ion beamsPAN, J. S; WEE, A. T. S; HUAN, C. H. A et al.Applied surface science. 1997, Vol 115, Num 2, pp 166-173, issn 0169-4332Article

Initial stages of nitridation of Si(111) surfaces : X-ray photoelectron spectroscopy and scanning tunneling microscopy studiesTABE, M; YAMAMOTO, T.Surface science. 1997, Vol 376, Num 1-3, pp 99-112, issn 0039-6028Article

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