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Results 1 to 25 of 905

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The influence of light intensity on surface recombination in GaS single crystalsSZALAJKO, Maria; NOWAK, Marian.Applied surface science. 2007, Vol 253, Num 7, pp 3636-3641, issn 0169-4332, 6 p.Article

Diffusion length measurement with a quick EBIC techniqueBOUDJANI, A.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 175-179, issn 0268-1242, 5 p.Article

Surface recombination model of visible luminescence in porous siliconHAJNAL, Z; DEAK, P.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1053-1057, issn 0022-3093, bConference Paper

Low surface recombination velocity and contact resistance using p + / p carbon-doped GaAs structuresLYON, T. J; KASH, J. A; TIWARI, S et al.Applied physics letters. 1990, Vol 56, Num 24, pp 2442-2444, issn 0003-6951Article

An EBIC model to describe two close grain boundaries in semiconductorsLAHRECHE, Abderrezak; BEGGAH, Yamina; DJAMEL EDDINE MEKKI et al.International journal of nanoparticles (Print). 2013, Vol 6, Num 2-3, pp 208-214, issn 1753-2507, 7 p.Article

Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOSBRAMMERTZ, G; HEYNS, M; MEURIS, M et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2154-2157, issn 0167-9317, 4 p.Conference Paper

Internal quantum efficiency analysis of solar cell by genetic algorithmKANGLIN XIONG; SHULONG LU; TAOFEI ZHOU et al.Solar energy. 2010, Vol 84, Num 11, pp 1888-1891, issn 0038-092X, 4 p.Article

The effects of radiation-induced interface traps on base current in gated bipolar test structuresCHEN, X. J; BARNABY, H. J.Solid-state electronics. 2008, Vol 52, Num 5, pp 683-687, issn 0038-1101, 5 p.Article

Determination of front surface recombination velocity of silicon solar cells using the short-wavelength spectral responseSHARMA, A. K; AGARWAL, S. K; SINGH, S. N et al.Solar energy materials and solar cells. 2007, Vol 91, Num 15-16, pp 1515-1520, issn 0927-0248, 6 p.Conference Paper

Passivation properties of nitric/phosphoric etching on CdTe films: Influence of the etching time and nitric acid concentrationVIGIL-GALAN, O; CRUZ-OREA, A; MEJIA-GARCIA, C et al.Thin solid films. 2011, Vol 519, Num 21, pp 7164-7167, issn 0040-6090, 4 p.Conference Paper

An analysis of the factors affecting the alpha parameter used for extracting surface recombination velocity in EBIC measurementsKURNIAWAN, Oka; ONG, Vincent K. S.Solid-state electronics. 2006, Vol 50, Num 3, pp 345-354, issn 0038-1101, 10 p.Article

Drastic reduction in surface recombination velocity of crystalline silicon by surface treatment using catalytically-generated radicalsMATSUMURA, Hideki; MIYAMOTO, Motoharu; KOYAMA, Koichi et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 797-799, issn 0927-0248, 3 p.Article

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopyYANG, L. L; ZHAO, Q. X; WILLANDER, M et al.Applied surface science. 2010, Vol 256, Num 11, pp 3592-3597, issn 0169-4332, 6 p.Article

Surface-recombination-free InGaAs/InP HBTs and the base contact recombinationJIN, Z; LIU, X; PROST, W et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1088-1091, issn 0038-1101, 4 p.Article

Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)LEBEDEV, Mikhail V; IKEDA, Katsuyoshi; NOGUCHI, Hidenori et al.Applied surface science. 2013, Vol 267, pp 185-188, issn 0169-4332, 4 p.Article

On Shockley-Read-Hall model with finite relaxation time of traps for surface recombination velocity in case of illuminationFLUERARU, C.Journal de physique. III (Print). 1995, Vol 5, Num 1, pp 33-42, issn 1155-4320Article

Influence de la lumière sur la vitesse de recombinaison superficielle des particules atomiquesSUKHAREV, V. YA; MYASNIKOV, I. A.Kinetika i kataliz. 1985, Vol 26, Num 1, pp 51-55, issn 0453-8811Article

Dynamical Monte Carlo simulation of surface atomic recombinationGUERRA, V; LOUREIRO, J.Plasma sources science & technology (Print). 2004, Vol 13, Num 1, pp 85-94, issn 0963-0252, 10 p.Article

Étude des interactions entre une post-décharge d'azote en écoulement et des surfaces céramiques et métalliques. Modélisation de la recombinaison de l'azote atomique = Interactions between a nitrogen flowing post-discharge and ceramic and metallic surfaces. Modelling of nitrogen atoms recombinationLefèvre, Linda; Michel, Henri.1999, 172 p.Thesis

Reduction of space charge recombination current with a self Passivated GaAlAs/GaInP/GaAs HBT structureBOURGUIGA, R; PALMIER, J. F; DUBON-CHEVALLIER, C et al.Journal de physique. III (Print). 1997, Vol 7, Num 11, pp 2153-2157, issn 1155-4320Conference Paper

Influence d'un échauffement non homogène des porteurs de charge avec recombinaison Auger sur la photoconductivité des semiconducteursLUBASHEVSKIJ, I. A; PISHCHALKO, V. D; RYZHIJ, V. I et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1823-1826, issn 0015-3222Article

Surface recombination at semiconductor electrodes. I: Transient and steady-state photocurrentsPETER, L. M; LI, J; PEAT, R et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 165, Num 1-2, pp 29-40, issn 0022-0728Article

Modelling bulk and surface recombination in the sidewall space-charge layer of an emitter-base junctionROULSTON, D. J; ELTOUKHY, A. A.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 5, pp 205-209, issn 0143-7100Article

The concept of an effective surface recombination rate for solving problems of carrier transfer in photoconvertersAVERBUKH, T. G; MILOVANOV, A. F.Applied solar energy. 1995, Vol 31, Num 5, pp 1-4, issn 0003-701XArticle

Surface recombination in photoconductorsGOPAL, V.Acta paediatrica scandinavica. 1985, Vol 25, Num 4, pp 615-618, issn 0001-656XArticle

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