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Polarization switching and dielectric properties of ferroelectric thin filmsMALETO, M; PEVTSOV, E; SIGOV, A et al.Ferroelectrics (Print). 2003, Vol 286, pp 301-309, issn 0015-0193, 9 p.Conference Paper

Equivalent circuit model simulation of ferroelectric liquid crystals showing analogous switchingSAISHU, Tatsuo; YAMAGUCHI, Hajime; HASEGAWA, Ray et al.Ferroelectrics (Print). 2002, Vol 278, pp 203-218, issn 0015-0193, 16 p.Conference Paper

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V-Shaped switching in a ferroelectric liquid crystalwith the phase sequence of N*-SmC^*WANG, Jong-Min; KIM, Yu-Jin; CHANG JU KIM et al.Ferroelectrics (Print). 2002, Vol 277, pp 185-195, issn 0015-0193, 11 p.Conference Paper

A phenomenological constitutive law for ferroelastic switching and a resulting asymptotic crack tip solutionLANDIS, C. M; MCMEEKING, R. M.Journal of intelligent material systems and structures. 1999, Vol 10, Num 2, pp 155-163, issn 1045-389XArticle

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Electric fatigue properties of Pb-based ferroelectric and antiferroelectric thin filmsJAE HYUK JANG; PARK, Jihoon; KI HYUN YOON et al.Ferroelectrics (Print). 2001, Vol 258, Num 1-4, pp 309-314, issn 0015-0193Article

Effect of defect induced nucleation and growth on switching behavior in ferroelectricsAHLUWALIA, Rajeev; WENWU CAO.Ferroelectrics (Print). 2001, Vol 251, Num 1-4, pp 191-198, issn 0015-0193Conference Paper

Micromechanics of ferroelectric domain switching behavior. Part I: Coupled electromechanical field of domain inclusionsLU, W; FANG, D. N; HWANG, K. C et al.Theoretical and applied fracture mechanics. 2001, Vol 37, Num 1-3, pp 29-38, issn 0167-8442Article

Switching in ferroelectric thin film : Simulation with heterogeneous nucleationCHUNHUA LI; XIAOBING CHEN; JINSONG ZHU et al.Ferroelectrics (Print). 2001, Vol 252, Num 1-4, pp 105-112, issn 0015-0193Conference Paper

Temperature dependence of the domain switching of (CH₃NH₃)₅Bi₂Br₁₁ crystalsMATYJASEK, K; JAKUBAS, R.Ferroelectrics (Print). 1999, Vol 227, Num 1-4, pp 77-85, issn 0015-0193Article

A Monte-Carlo approach of domain switching in ferroelectric Potts lattice under external electric fieldLIU, J.-M; LIU, Z. G.Materials letters (General ed.). 1998, Vol 36, Num 1-4, pp 17-23, issn 0167-577XArticle

Kinetics of polarization reversal in normal and relaxor ferroelectrics : Relaxation effectsSHUR, V. Y.Phase transitions (Print). 1998, Vol 65, Num 1-4, pp 49-72, issn 0141-1594, SEC.BArticle

Full and partial polarization switching characteristics of sol-gel derived Pb(Zr_xTi_1-x)O₃ thin filmsJOON HAN KIM; CHANG YUB PARK.Ferroelectrics (Print). 1997, Vol 193, Num 1-4, pp 95-107, issn 0015-0193Article

Electrical properties of Pb(Zr_0.52Ti_0.48)O₃ thin films prepared by sol-gel processingPAIK, D.-S; SHIN, H.-Y; CHOI, H.-W et al.Ferroelectrics (Print). 1997, Vol 200, Num 1-4, pp 185-195, issn 0015-0193Article

Simulation of switching properties of ferroelectrics on the basis of dipole lattice modelTURA, V; RICINSCHI, D; MITOSERIU, L et al.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp 2183-2191, issn 0021-4922, 1Article

Microcracking and electric fatigue of polycrystalline ferroelectric ceramicsKIM, S.-J; JIANG, Q.Smart materials and structures. 1996, Vol 5, Num 3, pp 321-326, issn 0964-1726Article

Computer simulation of fatigue in ferroelectric thin films by a modified diffusion limited aggregation model with driftXINGLIAO LI; JIANSHE LIU; DEXIN LU et al.Japanese journal of applied physics. 1995, Vol 34, Num 1A, pp L51-L53, issn 0021-4922, 2Article

Photo-assisted switching and trapping in BaTiO₃ and Pb(Zr,Ti)O₃ ferroelectricsWARREN, W. L; DIMOS, D.Journal of non-crystalline solids. 1995, Vol 187, pp 448-452, issn 0022-3093Conference Paper