Condensate luminescence under ultraviolet excitation: application to the study of ultrathin SOI layersTAJIMA, Michio; IBUKA, Shigeo; ARAI, Shigenori et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 10-15, issn 0921-5107Conference Paper

Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999OGAWA, Tomoya; TAJIMA, Michio.Journal of crystal growth. 2000, Vol 210, Num 1-3, issn 0022-0248, 432 p.Conference Proceedings

Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar CellsTAJIMA, Michio; IKEBE, Masatoshi; OHSHITA, Yoshio et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 747-750, issn 0361-5235, 4 p.Conference Paper

Dominant radiation-induced defects in space solar cell silicon manifested by photoluminescence spectroscopyTAJIMA, Michio; WARASHINA, Masatoshi; HISAMATSU, Tadashi et al.ESA SP (Print). 2002, pp 741-745, issn 0379-6566, isbn 92-9092-812-3, 5 p.Conference Paper

Life cycle of grown-in defects in silicon as observed by IR-LSTKISSINGER, G; VANHELLEMONT, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 7-14, issn 0022-0248Conference Paper

Imaging of hydrogen distribution on solid surfaces by desorption spectroscopyUEDA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 416-420, issn 0022-0248Conference Paper

Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuitsVAINER, B. G.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 356-360, issn 0022-0248Conference Paper

Crystal growth of micropipe free 4H-SiC on 4H-SiC{0 3 3 8} seed and high-purity semi-insulating 6H-SiCSHIOMI, Hiromu; KINOSHITA, Hiroyuki; FURUSHO, Tomoaki et al.Journal of crystal growth. 2006, Vol 292, Num 2, pp 188-191, issn 0022-0248, 4 p.Article

Analysis of grown-in defects in Czochralski SiITSUMI, M.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 1-6, issn 0022-0248Conference Paper

Investigations on the low-energy proton-induced defects on Ti/N-GaAs Schottky barrier diode parametersJAYAVEL, P; KUMAR, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 268-272, issn 0022-0248Conference Paper

Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitationTAJIMA, Michio.Journal of crystal growth. 2002, Vol 237-39, pp 324-329, issn 0022-0248, 1Conference Paper

Complex defects in electron-irradiated ZnSSHONO, Y; OKA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 278-282, issn 0022-0248Conference Paper

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscopeYAMADA, M; TAO CHU.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 102-106, issn 0022-0248Conference Paper

A quantitative approach to Makyoh (magic-mirror) topographyRIESZ, F.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 370-374, issn 0022-0248Conference Paper

Self-formation of ultra small structures on vicinal Si substrates for nano-device arrayHANAJIRI, T; SUGANO, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 85-89, issn 0022-0248Conference Paper

Concentration of point defects changed by thermal stress in growing CZ silicon crystal : effect of the growth rateTANAHASHI, K; KIKUCHI, M; HIGASHINO, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 45-48, issn 0022-0248Conference Paper

Analysis of peculiar structural defects created in GaAs by diffusion of copperFRIGERI, C; WEYHER, J. L; MÜLLER, S et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 177-181, issn 0022-0248Conference Paper

Cleavage of thin films for X-HREM study of interface quality in heterostructuresVOROB'EV, A. B; GUTAKOVSKY, A. K; PRINZ, V. Ya et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 182-186, issn 0022-0248Conference Paper

Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopiesKURAI, S; YAMADA, Y; TAGUCHI, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 216-219, issn 0022-0248Conference Paper

Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in siliconYOSHIDA, M; KAMIURA, Y; TSURUNO, R et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 128-131, issn 0022-0248Conference Paper

Classification of etch pits at silicon wafer surface using image-processing instrumentAKATSUKA, M; SUEOKA, K; YAMAMOTO, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 366-369, issn 0022-0248Conference Paper

Can physical analysis aid in device characterization?CHAN, D. S. H; CHIM, W. K; PHANG, J. C. H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 323-330, issn 0022-0248Conference Paper

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devicesZANONI, E; MENEGHESSO, G; MENOZZI, R et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 331-340, issn 0022-0248Conference Paper

Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bondingVAINER, B. G; KAMAEV, G. N; KURISHEV, G. L et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 351-355, issn 0022-0248Conference Paper

Spectroscopic discrimination of non-radiative centers in quantum wells by two wavelength excited photoluminescenceZANARDI OCAMPO, J. M; KAMATA, N; HOSHINO, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 238-241, issn 0022-0248Conference Paper