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TIN DOPING OF ACTIVE REGION IN GAASP/INP LASERSTAMARI N.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 108-110; BIBL. 22 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF CADMIUM-DOPED INGAASP/INP DOUBLE HETEROSTRUCTURE LASERSTAMARI N.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 792-794; BIBL. 20 REF.Article

GROWTH AND CHARACTERIZATION OF CD-DOPED INGAASP/INP DOUBLE HETEROSTRUCTURE LASERSTAMARI N.1982; J. ELECTRON. MATER; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 611-629; BIBL. 22 REF.Article

HIGH-T0 LOW-THRESHOLD CRESCENT INGAASP MESA-SUBSTRATE BURIED-HETEROJUNCTION LASERSTAMARI N; SHTRIKMAN H.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 177-178; BIBL. 7 REF.Article

LPE GROWTH OF PB1-XSNXTE LAYERS ON METALETCHED SUBSTRATESTAMARI N; SHTRIKMAN H.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 48; NO 3; PP. 383-386; BIBL. 17 REF.Article

CATALYTIC EFFECTS OF VARIOUS METALS AND REFRACTORY OXIDES ON THE GROWTH OF TIC WHISKERS BY CHEMICAL VAPOR DEPOSITIONTAMARI N; KATO A.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 2; PP. 221-237; BIBL. 23 REF.Article

EXPERIMENTALLY DETERMINED SOLID-LIQUID THE LINES OF PB1-XSNXTE.TAMARI N; BHTRIKMAN H.1978; J CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 5; PP. 653-654; BIBL. 2 REF.Article

CROISSANCE CRISTALLINE DE CARBURE DE ZIRCONIUM PAR DEPOT CHIMIQUE EN PHASE VAPEURTAMARI N; KATO A.1977; NIPPON KAGAKU KAISHI; JAP.; DA. 1977; NO 5; PP. 650-655; ABS. ANGL.; BIBL. 23 REF.Article

FORMATION OF MOLYBDENUM CARBIDE POWDERS BY CVD METHOD.TAMARI N; KATO A.1976; J. CERAM. SOC. JAP.; JAP.; DA. 1976; VOL. 84; NO 972; PP. 409-411; BIBL. 11 REF.Article

CRYSTAL GROWTH OF TITANIUM NITRIDE BY CHEMICAL VAPOR DEPOSITION.KATO A; TAMARI N.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 55-60; BIBL. 15 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

GROWTH STUDY OF LARGE NON-SEEDED PB1-XSNXTE SINGLE CRYSTALSTAMARI N; SHTRIKMAN H.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 269-288; BIBL. 18 REF.Article

IMPROVED NUCLEATION AND A PLANAR INTERFACE IN LPE GROWN PB1-XSNXTE HETEROSTRUCTURESTAMARI N; SHTRIKMAN H.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 3; PP. 463-466; BIBL. 19 REF.Article

SOME COMMON ASPECTS OF THE GROWTH OF TIN, ZRN, TIC AND ZRC WHISKERS IN CHEMICAL VAPOR DEPOSITIONKATO A; TAMARI N.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 49; NO 1; PP. 199-203; BIBL. 21 REF.Article

CATALYTIC EFFECT OF NICKEL ON THE GROWTH OF ZIRCONIUM CARBIDE WHISKERS BY CHEMICAL VAPOR DEPOSITION.TAMARI N; KATO A.1978; J. LESS-COMMON METALS; NETHERL.; DA. 1978; VOL. 58; NO 2; PP. 147-160; BIBL. 15 REF.Article

NON-SEEDED GROWTH OF LARGE SINGLE PB1-XSNXTE CRYSTALS ON A QUARTZ SURFACE.TAMARI N; SHTRIKMAN H.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 3; PP. 378-380; BIBL. 6 REF.Article

HIGH POWER SINGLE MODE INGAASP LASERS FABRICATED BY SINGLE STEP LIQUID PHASE EPITAXYORON M; TAMARI N.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 139-141; BIBL. 15 REF.Article

DISLOCATION ETCH PITS IN LPE-GROWN PB1-XSNXTE (LTT) HETEROSTRUCTURESTAMARI N; SHTRIKMAN H.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5736-5742; BIBL. 23 REF.Article

CROISSANCE EN PHASE VAPEUR DE TRICHITES DE NITRURE DE ZIRCONIUM SUR DIFFERENTS SUPPORTSMIYOSHI; TAMARI N; KATO A et al.1979; NIPPON KAGAKU KAISHI; JPN; DA. 1979; NO 12; PP. 1771-1773; ABS. ENG; BIBL. 5 REF.Article

CROISSANCE DE TRICHITES DE CARBURE DE SILICIUMOGURA T; TAMARI N; TOIBANA Y et al.1980; OSAKA KAGYO GIJUTSU SHIKENSHO KIHO; ISSN 0472-142X; JPN; DA. 1980; VOL. 31; NO 3; PP. 199-201; ABS. ENG; BIBL. 6 REF.Article

CALCULATION OF THE PHASE DIAGRAM OF THE PB-SN-TE SYSTEM IN THE (PN+SN)-RICH REGIONSZAPIRO S; TAMARI N; SHTRIKMAN H et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 3; PP. 501-516; BIBL. 37 REF.Article

EFFETS CATALYTIQUES DE DIFFERENTS MATERIAUX SUR LA CROISSANCE DE TRICHITES DE NITRURE DE TITANE PAR DEPOT CHIMIQUE EN PHASE VAPEURHAGIMURA A; TAMARI N; KATO A et al.1979; NIPPON KAGAKU KAISHI; JPN; DA. 1979; NO 1; PP. 49-56; ABS. ENG; BIBL. 15 REF.Article

GROWTH RATE OF TITANIUM CARBIDE WHISKERS IN CHEMICAL VAPOR DEPOSITION.KATO A; YASUNAGA M; TAMARI N et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 3; PP. 293-300; BIBL. 25 REF.Article

LASING PROPERTIES OF INGAASP BURIED HETEROJUNCTION LASERS GROWN ON A MESA SUBSTRATEORON M; TAMARI N; SHTRIKMAN H et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 609-611; BIBL. 12 REF.Article

CARRIER CONCENTRATION AND MOBILITY OF PBTE AND PB1-XSNXTE LPE THIN LAYERSZEMEL A; TAMARI N; EGER D et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5549-5551; BIBL. 14 REF.Article

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