XPS study on the chemical shifts of crystalline III-VI layered compoundsTAMBO, T; TATSUYAMA, C.Journal of the Physical Society of Japan. 1985, Vol 54, Num 11, pp 4382-4389, issn 0031-9015Article

Barrier formation at Cu, Ag and Au-GaSe layered semiconductorsTAMBO, T; TATSUYAMA, C.Surface science. 1989, Vol 222, Num 2-3, pp 343-350, issn 0039-6028Article

Reactivity at interfaces of Cu, Ag and Au-GaSe layered compoundsTAMBO, T; TATSUYAMA, C.Surface science. 1989, Vol 222, Num 2-3, pp 332-342, issn 0039-6028, 11 p.Article

Change in myofibrillar protein of cured horse mackerel meat induced by dehydrationTAMBO, T; YAMADA, N; KITADA, N et al.Nippon Suisan Gakkaishi. 1992, Vol 58, Num 4, pp 685-691, issn 0021-5392Article

The structural deformations in the Si/SiGe system induced by thermal annealingSHUQI ZHENG; MORI, M; TAMBO, T et al.Journal of materials science. 2007, Vol 42, Num 14, pp 5312-5317, issn 0022-2461, 6 p.Article

Change in myofibrillar protein of fish muscle caused by soaking in NaCl solutionTAMBO, T; YAMADA, N; KITADA, N et al.Nippon Suisan Gakkaishi. 1992, Vol 58, Num 4, pp 677-683, issn 0021-5392Article

Study of epitaxial SrTiO₃ (STO) thin films grown on Si(0 0 1)-2 x 1 substrates by molecular beam epitaxyBHUIYAN, M. N. K; MATSUDA, A; YASUMURA, T et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 590-595, issn 0169-4332, 6 p.Conference Paper

MBE grown short-period (Si_m/Ge_n)_N superlattices (SSLs) and its effect on the growth of uniform Si_0.75Ge_0.25/(SSLs)/Si(001) systemsRAHMAN, M. M; KURUMATANI, K; MATADA, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 252-256, issn 0921-5107Conference Paper

Twinned InSb molecular layer on Si(1 1 1) substrateRAO, B. V; GRUZNEV, D; MORI, M et al.Surface science. 2001, Vol 493, Num 1-3, pp 373-380, issn 0039-6028Conference Paper

Initial stage of the growth of GaS thin films on GaAsISLAM, A. B. M. O; ASAI, K; LIM, K. K et al.Applied surface science. 1998, Vol 123-24, pp 508-512, issn 0169-4332Conference Paper

Heteroepitaxial growth of rotated InSb films on a Si(1 1 1) substrate via 2 × 2-In surface reconstructionMORI, M; SAITO, M; YAMASHITA, Y et al.Journal of crystal growth. 2007, Vol 301-302, pp 207-211, issn 0022-0248, 5 p.Conference Paper

Two-step growth of SrTiO₃ films on Sr-modulated Si(001) substratesBHUIYAN, M. N. K; KIMURA, H; TAMBO, T et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 4, pp 225-228, issn 0957-4522, 4 p.Article

Sb adsorption onto In nanocluster array structure formed on a Si(111)-(7×7)SAITO, M; TAKEUCHI, C; MORI, M et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 137-140, issn 0169-4332, 4 p.Conference Paper

Atomic structure and formation process of the Si(1 1 1)-Sb(√7 × √7) surface phaseGRUZNEV, D; RAO, B. V; FURUKAWA, Y et al.Applied surface science. 2003, Vol 212-13, pp 135-139, issn 0169-4332, 5 p.Conference Paper

Passivation of GaAs surface by GaSISLAM, A. B. M. O; TAMBO, T; TATSUYAMA, C et al.Vacuum. 2000, Vol 59, Num 4, pp 894-899, issn 0042-207XArticle

High-speed GaAs SCFL dividerTAMURA, A; SAKASHITA, T; UENOYAMA, T et al.Electronics Letters. 1985, Vol 21, Num 14, pp 605-606, issn 0013-5194Article

Heteroepitaxial growth of high quality InSb films on Si(111) substrates using a two-step growth methodRAO, B. V; GRUZNEV, D; TAMBO, T et al.Semiconductor science and technology. 2001, Vol 16, Num 4, pp 216-221, issn 0268-1242Article

Low-temperature growth of InSb(1 1 1) on Si(1 1 1) substrateMURATA, K; AHMAD, N. B; TAMURA, Y et al.Journal of crystal growth. 2007, Vol 301-302, pp 203-206, issn 0022-0248, 4 p.Conference Paper

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layerMORI, M; FUJIMOTO, N; AKAE, N et al.Journal of crystal growth. 2006, Vol 286, Num 2, pp 218-222, issn 0022-0248, 5 p.Article

Atomic H-mediated (Si₁₄/Ge₁)₂₀ superlattice buffers for the growth of Si_0.75Ge_0.25 alloy layers with low residual strainRAHMAN, M. M; TAMBO, T; TATSUYAMA, C et al.Thin solid films. 2004, Vol 464-65, pp 85-89, issn 0040-6090, 5 p.Conference Paper

Surface structure evolution during Sb adsorption on Si(1 1 1)-In(4 x 1) reconstructionGRUZNEV, D. V; RAO, B. V; TAMBO, T et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 134-138, issn 0169-4332Conference Paper

Growth of high-quality InSb films on Si(111) substrates without buffer layersRAO, B. V; GRUZNEV, D; TAMBO, T et al.Journal of crystal growth. 2001, Vol 224, Num 3-4, pp 316-322, issn 0022-0248Article

Sb adsorption on Si(1 1 1)-In(4 x 1) surface phaseRAO, B. V; GRUZNEV, D; TAMBO, T et al.Applied surface science. 2001, Vol 175-76, pp 187-194, issn 0169-4332Conference Paper

Residual strain and surface roughness of Si_1-xGe_x alloy layers grown by molecular beam epitaxy on Si(001) substrateTATSUYAMA, C; ASANO, T; NAKAO, T et al.Thin solid films. 2000, Vol 369, Num 1-2, pp 161-166, issn 0040-6090Conference Paper

Interface formation between layered-compound GaS and GaAs(111)A surfaceISLAM, A. B. M. O; ASAI, K; LIM, K. K et al.Surface science. 1998, Vol 416, Num 1-2, pp 295-304, issn 0039-6028Article