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A NEW TECHNOLOGY FOR TAPERED WINDOWS IN INSULATING FILMSONO H; TANGO H.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 3; PP. 504-505; BIBL. 4 REF.Article

SOS LSI TECHNOLOGY.TANGO H; MAEGUCHI K; SUGINO E et al.1978; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1978; NO 113; PP. 34-37; BIBL. 7 REF.Article

SOS LSI TECHNOLOGY ACHIEVES DEVICE RELIABILITY.TANGO H; MAEGUCHI K; SUGINO E et al.1978; J. ELECTRON. ENGNG; JAP.; DA. 1978; NO 137; PP. 52-55; BIBL. 7 REF.Article

A subnanosecond 8K-gate CMOS/SOS gate arrayTANAKA, S; IWAMURA, J; OHNO, J et al.IEEE journal of solid-state circuits. 1984, Vol 19, Num 5, pp 657-663, issn 0018-9200Article

Analysis of signal to noise ratio of photoconductive layered solid-state imaging deviceMATSUNAGA, Y; HATORI, F; TANGO, H et al.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 1, pp 38-42, issn 0018-9383Article

A 2400-GATE RALU ON SOS.IWAMURA J; OHHASHI M; ISOBE M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 557-560; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

AN 18 NS CMOS/SOS 4K STATIC RAMISOBE M; UCHIDA Y; MAEGUCHI K et al.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 5; PP. 460-465; BIBL. 12 REF.Article

The bias-annealing effect on a-Si:H photodiodeICHINOSE, H; ISHIZUKA, Y; NOZAKI, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 322-325, issn 0022-3093, 1Conference Paper

Analysis of photoelectric conversion characteristics under knee control operation for CCD imagersNAKAMURA, N; MATSUNAGA, Y; EGAWA, Y et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 12, pp 2291-2296, issn 0018-9383Article

Two-dimensional simulation and measurement of high-performance MOSFET's made on a very thin SOI filmYOSHIMI, M; HAZAWA, H; TAKAHASHI, M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 3, pp 493-503, issn 0018-9383, 11 p.Article

Seeding lateral epitaxy of silicon on insulator with improved seed and cap structure by pseudoline shaped electron beam annealingSUGURO, K; INOUE, T; HAMASAKI, T et al.Applied physics letters. 1985, Vol 47, Num 7, pp 696-699, issn 0003-6951Article

Self-assembled growth of InAs-quantum dots and postgrowth behavior studied by reflectance-difference spectroscopyKITA, T; TACHIKAWA, K; TANGO, H et al.Applied surface science. 2000, Vol 159-60, pp 503-507, issn 0169-4332Conference Paper

Electric field concentration at electrode edge with decreasing amorphous silicon defect densityIHARA, H; OBA, E; IIDA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 326-329, issn 0022-3093, 1Conference Paper

Multilevel construction of seeded-laterally epitaxial silicon films on insulatorHAMASAKI, T; INOUE, T; YOSHIMI, M et al.Journal of applied physics. 1987, Vol 62, Num 1, pp 126-130, issn 0021-8979Article

A high speed and low power CMOS/SOS multiplier-accumulatorIWAMURA, J; TAGUCHI, S; SUGANUMA, K et al.Microelectronics. 1983, Vol 14, Num 6, pp 49-57, issn 0026-2692Article

Characteristics of a-Si:H films prepared by a novel laminar flow photo-chemical vapor deposition methodYAMAGUCHI, T; IIDA, Y; FURUKAWA, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1017-1020, issn 0022-3093, 2Conference Paper

On the universality of inversion layer mobility in Si MOSFET's. I: Effects of substrate impurity concentrationTAKAGI, S.-I; TORIUMI, A; IWASE, M et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 12, pp 2357-2362, issn 0018-9383Article

Observation of mobility enhancement in ultrathin SOI MOSFETsYOSHIMI, M; HAZAMA, H; TAKAHASHI, M et al.Electronics Letters. 1988, Vol 24, Num 17, pp 1078-1079, issn 0013-5194Article

Highly controllable pseudoline electron-beam recrystallization of silicon on insulatorHAMASAKI, T; INOUE, T; HIGASHINAKAGAWA, I et al.Journal of applied physics. 1986, Vol 59, Num 8, pp 2971-2976, issn 0021-8979Article

Electrical properties of two-sided luminescence powder-distributed inorganic electroluminescence panelsSATOH, T; NAKATSUTA, T; TSURUYA, K et al.Journal of materials science. Materials in electronics. 2007, Vol 18, issn 0957-4522, S239-S242, SUP1Conference Paper

Standby/active mode logic for sub-1-V operating ULSI memoryTAKASHIMA, D; WATANABE, S; NAKANO, H et al.IEEE journal of solid-state circuits. 1994, Vol 29, Num 4, pp 441-447, issn 0018-9200Article

Application of E-beam recrystallization to three-layer image processor fabricationHAZAMA, H; TAKAHASHI, M; TANGO, H et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 1, pp 47-54, issn 0018-9383, 8 p.Article

Three-dimensional analysis of subthreshold swing and transconductance for fully recessed oxide (trench) isolated 1/4-μm-width MOSFET'sSHIGYO, N; FUKUDA, S; WADA, T et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 945-951, issn 0018-9383Article

Improvement of surface morphology and bulk structure of a-SiC:H filmsISHIZUKA, Y; YAMAGUCHI, T; IIDA, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1021-1025, issn 0022-3093, 2Conference Paper

A 2/3-in 2 million pixel STACK-CCD HDTV imagerYAMASHITA, H; SASAKI, M; MATSUNAGA, Y et al.IEEE journal of solid-state circuits. 1995, Vol 30, Num 8, pp 881-889, issn 0018-9200Article

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