BASIC TECHNOLOGY FOR VLSI. IITARUI Y.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1321-1331; BIBL. 26 REF.Article

Lithography systems for VLSITARUI, Y.Bulletin of the Japan Society of Precision Engineering. 1984, Vol 18, Num 2, pp 126-131, issn 0582-4206Article

DSA MOS TRANSITOR AND ITS INTEGRATED CIRCUIT.HAYASHI Y; SEKIGAWA T; TARUI Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 163-166; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

TRANSISTOR A AVALANCHE A GRILLE ISOLEEHAYASHI Y; SEKIGAWA T; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 323-327; ABS. ANGL.; BIBL. 2 REF.Article

MEMOIRE A SEMICONDUCTEUR NON VOLATILETARUI Y; NAGAI K; HAYASHI Y et al.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 10; PP. 990-1002; ABS. ANGL.; BIBL. 49 REF.Article

ELECTRICALLY REPROGRAMMABLE NONVOLATILE SEMICONDUCTOR MEMORY = MEMOIRE A SEMICONDUCTEUR PERMANENTE REPROGRAMMABLE ELECTRIQUEMENTTARUI Y; HAYASHI Y; NAGAI K et al.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 5; PP. 369-375; BIBL. 9 REF.Serial Issue

MEMOIRE SEMI-CONDUCTEUR NON VOLATILE EFFACABLE ELECTRIQUEMENTHAYASHI Y; NAGAI K; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 256-262; ABS. ANGL.; BIBL. 6 REF.Article

INJECTION, TRAPPING AND RELEASE FROM SIO₂ OF PHOTO-GENERATED HOLE CHARGE FOR AN ERASABLE NON-VOLATILE OPTICAL MEMORY.NAGAI K; HAYASHI Y; TARUI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 1; PP. 159-160; BIBL. 2 REF.Article

DATA PROCESSING SYSTEM OF ELECTRON-BEAM LITHOGRAPHY FOR VLSI MICROFABRICATIONSUGIYAMA N; KAWAJI A; TARUI Y et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 675-685; BIBL. 6 REF.Article

ANALYSE NUMERIQUE SUR ORDINATEUR ET FORMULES D'APPROXIMATION POUR LE RENDEMENT DE DISPOSITIFS COUPLES PAR LA CHARGEKOYANAGI T; KOMIYA Y; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 365-371; ABS. ANGL.; BIBL. 5 REF.Article

FABRICATION DE TRANSISTORS A EFFET DE CHAMP AU GAAS A GRILLE SCHOTTKYYAMAGUCHI T; KOMIYA Y; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 465-471; ABS. ANGL.; BIBL. 3 REF.Article

METHODE DE CALCUL DES CARACTERISTIQUES OPTIQUES DE MULTICOUCHEKOYANAGI T; KOMIYA Y; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 450-457; ABS. ANGL.; BIBL. 3 REF.Article

CARRIER INJECTION INTO SIO₂ FROM SI SURFACE DRIVEN TO AVALANCHE BREAKDOWN BY A LINEAR RAMP PULSE, AND TRAPPING, DISTRIBUTION AND THERMAL ANNEALING OF INJECTED HOLES IN SIO₂.NAGAI K; HAYASHI Y; TARUI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1539-1545; BIBL. 11 REF.Article

MESURE DES VARIATIONS DES CARACTERISTIQUES PHYSIQUES D'UNE COUCHE MINCE EN AL₂O₃ DANS UNE STRUCTURE MAS DANS LA DIRECTION PERPENDICULAIRE A LA COUCHE MINCEKOMIYA Y; TARUI Y; FUJISHIRO T et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 298-301; ABS. ANGL.; BIBL. 6 REF.Article

TRANSISTOR A EFFET DE CHAMP A GRILLE A BARRIERE SCHOTTKY OU GAAS AUTOALIGNEE QUI UTILISE UNE GRAVURE PREFERENTIELLETARUI Y; KOMIYA Y; YAMAGUCHI T et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 338-346; ABS. ANGL.; BIBL. 15 REF.Article

Poly(A) polymerase from Vigna unguiculata seedlings: a bifunctional enzyme responsible for both poly(A)-polymerizing and poly(A)-hydrolyzing activitiesTARUI, Y; MINAMIKAWA, T.European journal of biochemistry (Print). 1989, Vol 186, Num 3, pp 591-596, issn 0014-2956Article

QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA₂O₅ HIGH-DENSITY VLSI DYNAMIC MEMORYOHTA K; YAMADA K; SHIMIZU K et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 368-376; BIBL. 45 REF.Article

A NEW FABRICATION METHOD OF SMALL-DIMENSION DEVICES-MULTIPLE-WALL SELF-ALIGNED DEVICESSHIBATA H; IWASAKI K; OKU T et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 604-610; BIBL. 13 REF.Article

COMPUTER ANALYSIS OF THE EFFICIENCY OF SILICON SOLAR CELLSKOYANAGI T; SUZUKI E; KOMIYA Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 355-364; ABS. ANGL.; BIBL. 5 REF.Article

CARACTERISTIQUES D'UN TRANSISTOR MOS A GRILLE TRANSPARENTE ET PHOTOREPONSE D'UNE COUCHE D'INVERSIONKOMIYA Y; KOYANAGI T; SAKAMOTO T et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 302-312; ABS. ANGL.; BIBL. 6 REF.Article

METHODE DE MESURE DES POTENTIELS DE SURFACE D'UN CIRCUIT INTEGRE A L'AIDE D'UN FAISCEAU ELECTRONIQUENAKAHARA K; TARUI Y; KAWASHIRO S et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 380-386; ABS. ANGL.; BIBL. 13 REF.Article

Purification and properties of poly(A) polymerase from Vigna unguiculataTARUI, Y; MINAMIKAWA, T.Plant and cell physiology. 1988, Vol 29, Num 5, pp 835-842, issn 0032-0781, 8 p.Article

Photo-CVD of tantalum oxide film from pentamethoxy tantalum for VLSI dynamic memoriesYAMAGISHI, K; TARUI, Y.Japanese journal of applied physics. 1986, Vol 25, Num 4, pp L306-L308, issn 0021-4922, 2Article

LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF STANNIC OXIDE FILMS.HAYASHI F; TESHIMA H; YAMANAKA M et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 387-391; BIBL. 4 REF.Article

CROISSANCE EPITAXIQUE EN PHASE LIQUIDE DE GAASIIDA H; UCHIDA N; KOMIYA Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 458-464; ABS. ANGL.; BIBL. 5 REF.Article