ELECTRICAL AND OPTICAL PROPERTIES OF GASE-SNO₂ HETEROJUNCTIONS.TATSUYAMA C; ICHIMURA S.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 5; PP. 843-847; BIBL. 17 REF.Article

GROUP THEORETICAL ANALYSIS OF PHONON ASSISTED OPTICAL TRANSITION IN GASE.TATSUYAMA C; ICHIMURA S.1978; J. PHYS. SOC. JAP.; JAP.; DA. 1978; VOL. 44; NO 2; PP. 575-581; BIBL. 25 REF.Article

LIGHT AND ELECTRON MICROSCOPIC STUDIES OF THE RETROCORNEAL HYALINE NETWORK = ETUDES AU MICROSCOPE OPTIQUE ET ELECTRONIQUE DU RESEAU HYALIN RETROCORNEENTANISHIMA T; TATSUYAMA C.1974; JAP. J. OPHTHALMOL.; JAP.; DA. 1974; VOL. 18; NO 2; PP. 187-196; BIBL. 10REF.Article

RAMAN SCATTERING AND PHASE TRANSITIONS IN V₂O₃ AND (V_1-XCR_X)₂O₃TATSUYAMA C; FAN HY.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 7; PP. 2977-2983; BIBL. 9 REF.Article

XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASEIWAKURO H; TATSUYAMA C; ICHIMURA S et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. 94-99; BIBL. 16 REF.Article

OBSERVATION OF GASE-SNO₂ HETEROSTRUCTURE BY XPS AND AESTATSUYAMA C; ICHIMURA S; IWAKURO H et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. L25-L27; BIBL. 14 REF.Article

ELECTROLUMINESCENCE INF FORWARD BIASED GASE-SNO₂ HETEROJUNCTION.TATSUYAMA C; MIZUKAMI H; ICHIMURA S et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1925-1926; BIBL. 5 REF.Article

Barrier formation at Cu, Ag and Au-GaSe layered semiconductorsTAMBO, T; TATSUYAMA, C.Surface science. 1989, Vol 222, Num 2-3, pp 343-350, issn 0039-6028Article

PHOTOLUMINESCENCE IN GASE.MATSUMURA T; SUDO M; TATSUYAMA C et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 2; PP. 685-693; ABS. ALLEM.; BIBL. 28 REF.Article

XPS study on the chemical shifts of crystalline III-VI layered compoundsTAMBO, T; TATSUYAMA, C.Journal of the Physical Society of Japan. 1985, Vol 54, Num 11, pp 4382-4389, issn 0031-9015Article

Reactivity at interfaces of Cu, Ag and Au-GaSe layered compoundsTAMBO, T; TATSUYAMA, C.Surface science. 1989, Vol 222, Num 2-3, pp 332-342, issn 0039-6028, 11 p.Article

Optical properties of dye molecules adsorbed on evaporated metal surfaces = Propriétés optiques des molécules colorantes adsorbées sur des surfaces métalliques évaporéesUEBA, H; TATSUYAMA, C; MORIGUCHI, T et al.Journal of electron spectroscopy and related phenomena. 1987, Vol 45, pp 123-132, issn 0368-2048Conference Paper

XPS study on the oxidation of InSeMIYAKE, I; TANPO, T; TATSUYAMA, C et al.Japanese journal of applied physics. 1984, Vol 23, Num 2, pp 172-178, issn 0021-4922Article

Heteroepitaxy of Si films on a Ge(100)-2×1 surfaceKAWABATA, H; UEBA, H; TATSUYAMA, C et al.Journal of applied physics. 1989, Vol 66, Num 2, pp 634-639, issn 0021-8979, 6 p.Article

Low-energy electron-loss spectroscopy of GaSe and InSeARAKI, H; NISHIKAWA, S; TANBO, T et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8164-8170, issn 0163-1829, 1Article

On the electrochromism of evaporated V₂O₅ filmsFUJITA, Y; MIYAZAKI, K; TATSUYAMA, C et al.Japanese journal of applied physics. 1985, Vol 24, Num 8, pp 1082-1086, issn 0021-4922Article

Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceASAI, M; UEBA, H; TATSUYAMA, C et al.Journal of applied physics. 1985, Vol 58, Num 7, pp 2577-2583, issn 0021-8979Article

Heteroepitaxial growth and superstructure of Ge on Si(111)-7×7 and (100)-2×1 surfacesSHOJI, K; HYODO, M; UEBA, H et al.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp 1482-1488, issn 0021-4922Article

The structural deformations in the Si/SiGe system induced by thermal annealingSHUQI ZHENG; MORI, M; TAMBO, T et al.Journal of materials science. 2007, Vol 42, Num 14, pp 5312-5317, issn 0022-2461, 6 p.Article

Heteroepitaxy between layered semiconductors GaSe and InSeTATSUYAMA, C; TANBO, T; NAKAYAMA, N et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 539-543, issn 0169-4332Conference Paper

Structural properties of heteroepitaxial Ge films on a si(100)-2×1 surfaceKATAOKA, Y; UEBA, H; TATSUYAMA, C et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 749-759, issn 0021-8979Article

Study of epitaxial SrTiO₃ (STO) thin films grown on Si(0 0 1)-2 x 1 substrates by molecular beam epitaxyBHUIYAN, M. N. K; MATSUDA, A; YASUMURA, T et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 590-595, issn 0169-4332, 6 p.Conference Paper

MBE grown short-period (Si_m/Ge_n)_N superlattices (SSLs) and its effect on the growth of uniform Si_0.75Ge_0.25/(SSLs)/Si(001) systemsRAHMAN, M. M; KURUMATANI, K; MATADA, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 252-256, issn 0921-5107Conference Paper

Twinned InSb molecular layer on Si(1 1 1) substrateRAO, B. V; GRUZNEV, D; MORI, M et al.Surface science. 2001, Vol 493, Num 1-3, pp 373-380, issn 0039-6028Conference Paper

Initial stage of the growth of GaS thin films on GaAsISLAM, A. B. M. O; ASAI, K; LIM, K. K et al.Applied surface science. 1998, Vol 123-24, pp 508-512, issn 0169-4332Conference Paper