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JOSEPHSON-JUNCTION MIXER ANALYSIS USING FREQUENCY-CONVERSION AND NOISE-CORRELATION MATRICESTAUR Y.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 10; PP. 1921-1928; BIBL. 18 REF.Article

LOW-NOISE JOSEPHSON MIXERS AT 115 GHZ USING RECYCLABLE POINT CONTACTS.TAUR Y; KERR AR.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 775-777; BIBL. 16 REF.Article

RELAXATION OSCILLATIONS IN POINT-CONTACT JOSEPHSON JUNCTIONS.TAUR Y; RICHARDS PL.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1793-1797; BIBL. 11 REF.Article

PARAMETRIC AMPLIFICATION AND OSCILLATION AT 36 GHZ USING A POINT-CONTACT JOSEPHSON JUNCTION.TAUR Y; RICHARDS PL.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 3; PP. 1321-1326; BIBL. 23 REF.Article

JOSEPHSON JUNCTIONS AS HETERODYNE DETECTORS.TAUR Y; CLAASSEN JH; RICHARDS PL et al.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12, PART. 1; PP. 1005-1009; BIBL. 11 REF.Article

NOISE IN JOSEPHSON POINT CONTACTS WITH AND WITHOUT RF BIAS.CLAASSEN JH; TAUR Y; RICHARDS PL et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 12; PP. 759-761; BIBL. 13 REF.Article

MILLIMETER-WAVE GENERATION AT 110 GHZ BY LASER MODULATION OF A HGCDTC PHOTODIODETAUR Y; CHEUNG DT; HUFFMAN EH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 819-821; BIBL. 9 REF.Article

Simulation study of the noise figure of nanometer-gate nMOS transistors near the scaling limitCAI, M; LIU, M; TAUR, Y et al.Solid-state electronics. 2007, Vol 51, Num 5, pp 667-673, issn 0038-1101, 7 p.Article

CHARGE-COUPLED DEVICES IN EPITAXIAL HGCDTE/CDTE HETEROSTRUCTUREKIM ME; TAUR Y; SHIN SH et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 4; PP. 336-338; BIBL. 10 REF.Article

Limited utility of serum galactomannan assay after auto-SCTJATHAVEDAM, A; DURE, D. C; TAUR, Y et al.Bone marrow transplantation (Basingstoke). 2009, Vol 44, Num 1, pp 59-61, issn 0268-3369, 3 p.Article

Voltage dependence of the MOSFET gate-to-source/drain overlapOH, C. S; CHANG, W. H; DAVARI, B et al.Solid-state electronics. 1990, Vol 33, Num 12, pp 1650-1652, issn 0038-1101, 3 p.Article

Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxidesLO, S.-H; BUCHANAN, D. A; TAUR, Y et al.IBM journal of research and development. 1999, Vol 43, Num 3, pp 327-337, issn 0018-8646Article

Effect and extraction of series resistance in Al2O3-InGaAs MOS with bulk-oxide trapYU, B; YUAN, Y; CHEN, H.-P et al.Electronics letters. 2013, Vol 49, Num 7, pp 492-493, issn 0013-5194, 2 p.Article

Study of contact and shallow junction characteristics in submicron CMOS with self-aligned titanium silicideTAUR, Y; DAVARI, B; MOY, D et al.IBM journal of research and development. 1987, Vol 31, Num 6, pp 627-633, issn 0018-8646Article

Saturation transconductance of deep-submicron-channel MOSFETsTAUR, Y; HSU, C. H; WU, B et al.Solid-state electronics. 1993, Vol 36, Num 8, pp 1085-1087, issn 0038-1101Article

Discrete random dopant distribution effects in nanometer-scale MOSFETsWONG, H.-S. P; TAUR, Y; FRANK, D. J et al.Microelectronics and reliability. 1998, Vol 38, Num 9, pp 1447-1456, issn 0026-2714Article

Sidewall oxidation of polycrystalline-silicon gateWONG, C. Y; PICCIRILLO, J; ARUP BHATTACHARYYA et al.IEEE electron device letters. 1989, Vol 10, Num 9, pp 420-422, issn 0741-3106Article

A comprehensive study of hot-carrier instability in P- and N-type poly-SI gated MOSFET'sHSU, C. C.-H; DUEN-SHUN WEN; WORDEMAN, M. R et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 5, pp 675-680, issn 0018-9383Article

Source-drain contact resistance in CMOS with self-aligned TiSi2TAUR, Y; YUAN-CHEN SUN, J; MOY, D et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 3, pp 575-580, issn 0018-9383Article

A self-aligned 1-μm-channel CMOS technology with retrograde n-well and thin epitaxyTAUR, Y; HU, G. J; DENNARD, R. H et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 203-209, issn 0018-9383Article

BiCMOS technology with 60-GHz n-p-n bipolar and 0.25-μm CMOSWARNOCK, J; SHAHIDI, G. G; DAVARI, B et al.IEEE electron device letters. 1992, Vol 13, Num 11, pp 578-580, issn 0741-3106Article

A 4-mb low-temperature DRAMHENKELS, W. H; DUEN-SHUN WEN; DENNARD, R. H et al.IEEE journal of solid-state circuits. 1991, Vol 26, Num 11, pp 1519-1529, issn 0018-9200Article

A new shift and ratio method for MOSFET channel-length extractionTAUR, Y; ZICHERMAN, D. S; LONBARDI, D. R et al.IEEE electron device letters. 1992, Vol 13, Num 5, pp 267-269, issn 0741-3106Article

Experimental high performance sub-0.1 μm channel nMOSFET'sMII, Y; RISHTON, S; SEWELL, F et al.IEEE electron device letters. 1994, Vol 15, Num 1, pp 28-30, issn 0741-3106Article

Experimental 0.1-μm p-channel MOSFET with p+-polysilicon gate on 35-Å gate oxideTAUR, Y; COHEN, S; REEVES, C et al.IEEE electron device letters. 1993, Vol 14, Num 6, pp 304-306, issn 0741-3106Article

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