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Results 1 to 19 of 19

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A HIGH VOLTAGE DIELECTRIC ISOLATED THYRISTOR CROSSPOINT ARRAYKUSAKA T; ISHII T; NEGORO T et al.1980; N.E.C. RES. DEVELOP.; JPN; DA. 1980; NO 57; PP. 39-45; BIBL. 12 REF.Article

A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICONIMAI K.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 159-164; BIBL. 11 REF.Article

METHODE ET APPAREILLAGE POUR LA DETERMINATION DES PARAMETRES GEOMETRIQUES DES STRUCTURES DU SILICIUM AVEC ISOLATION DIELECTRIQUEOKSANICH AP; KONTSEVOJ YU A.1978; ZAVODSK. LAB.; SUN; DA. 1978; VOL. 44; NO 12; PP. 1494-1496; BIBL. 8 REF.Article

DIELECTRIC ISOLATION TECHNIQUES FOR INTEGRATED CIRCUITS.BOSNELL JR.1976; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1976; VOL. 15; NO 2; PP. 113-122; BIBL. 58 REF.Article

AN INVESTIGATION OF THE APPLICATION OF POROUS SILICON LAYERS TO THE DIELECTRIC ISOLATION OF INTEGRATED CIRCUITSTENG TC.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 5; PP. 870-874; BIBL. 4 REF.Article

RADIATION-STIMULATED FAILURE MECHANISM IN A DIELECTRICALLY ISOLATED INTEGRATED CIRCUIT.AZAREWICZ JL; WROBEL TF.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 3; PP. 159-164; BIBL. 3 REF.; (ELECTRON. COMPONENTS CONF.; WASHINGTON; 1974)Conference Paper

LA TECHNOLOGIE POLY-PLANAR ET SON APPLICATION A UNE PROM DE 2048 BITSLILEN H.1973; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1973; NO 167; PP. 32-33Serial Issue

A MONOLITHIC SERIES-ARRAYSOLAR-CELL SYSTEM.WARNER RM JR; MURRAY EM; SMITH WK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 838-839; BIBL. 3 REF.Article

UN PROGRES SPECTACULAIRE EN CIRCUITS INTEGRES A MOS COMPLEMENTAIRES: LA FAMILLE LOC MOS.BARRE C.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 216; PP. 27-29Article

A DUAL-GATE DEEP-DEPLETION TECHNIQUE FOR GENERATION LIFETIME MEASUREMENTBARTH PW; ANGELL JB.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2252-2255; BIBL. 6 REF.Article

ETUDE DE L'ISOLEMENT DIELECTRIQUE EN VUE D'OBTENIR UN FILM MINCE DE SILICIUM BIEN ISOLE.VERHOEVEN JL.1975; DGRST-7470415; FR.; DA. 1975; PP. (29P.); (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

SELECTIVE OXIDATION OF SILICON IN LOW-TEMPERATURE HIGH-PRESSURE STEAM = OXYDATION SELECTIVE DU SILICIUM DANS UNE VAPEUR HAUTE PRESSION A BASSE TEMPERATUREPOWELL RJ; LIGENZA JR; SCHNEIDER MS et al.1974; I.E.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 10; PP. 636-640; BIBL. 12 REF.Article

VERS LES VITESSES DE LA TTL: LES C/MOS A ISOLEMENT DIELECTRIQUELILEN H.1972; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1972; NO 165; PP. 69-71Serial Issue

THE METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT TECHNOLOGYGRANNEMANN WW; SOUTHWARD HD; ERTEZA A et al.1972; J. SCI. INDUSTR. RES.; INDIA; DA. 1972; VOL. 31; NO 6; PP. 299-311; BIBL. 24 REF.Serial Issue

CMOS-SCHALTER UND -MULTIPLEXER OHNE LATCH UP-EFFEKT. I. = COMMUTATEURS ET MULTIPLEXEURS CMOS SANS EFFET "LATCH-UP". IFRENZEL D.1978; ELEKTRONIK; DTSCH.; DA. 1978; VOL. 27; NO 1; PP. 57-60Article

CHEMICALLY VAPOR DEPOSITED POLYCRYSTALLINE-SILICON FILMS.KAMINS TI.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 221-229; BIBL. 1 P.Article

LIC TECHNOLOGY.DOYLE N.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 315-324; H.T. 3; (SEMINEX SEMIN.; LONDON; 1974)Conference Paper

EFFECTS OF OXIDE ISOLATION ON PROPAGATION DELAY IN INTEGRATED INJECTION LOGIC (I2L).IIZUKA T.1977; I.E.E.E. J. SOLID. STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 5; PP. 547-552; BIBL. 12 REF.Article

FINE PATTERN TECHNOLOGY.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 11-24; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

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