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SOME ASPECTS OF OXIDE ISOLATION TECHNOLOGYPAREKH PC.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 10; PP. 1703-1707; BIBL. 8 REF.Article

OXIDE ISOLATED ISL TECHNOLOGIESLOHSTROH J; CROMMENACKER JDPVD; LINSSEN AJ et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 30-31; BIBL. 5 REF.Article

A NEW ISOLATION TECHNIQUE FOR SOS/LSI'S-LOCAL BURIED OXIDE ISOLATION OF SOS (LOBOS).SAKAI Y; HORI R; DOTA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 551-555; BIBL. 2 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

OXIDE-ISOLATED INTEGRATED SCHOTTKY LOGICHEWLETT FW JR.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 800-802; BIBL. 5 REF.Article

A HIGH RESOLUTION ETCHING TECHNIQUE FOR DETERMINING EPITAXIAL LAYER THICKNESSPEARCE CW.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 920-921; BIBL. 12 REF.Article

OXIL, A VERSATILE BIPOLAR VLSI TECHNOLOGYAGRAZ GUEERENA J; PANOUSIS PT; MORRIS BL et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 462-466; BIBL. 11 REF.Article

FRAMED RECESSED OXIDE SCHEME FOR DISLOCATION-FREE PLANAR SI STRUCTURES.MAGDO I; BOHG A.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 932-936; BIBL. 14 REF.Article

HIGH-SPEED I2L WITH OXIDE ISOLATION.MUELLER R; GRAUL J.1976; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 6; PP. 360-363; ABS. ALLEM.; BIBL. 15 REF.Article

RELIABILITY OF SIO2 GATE DIELECTRIC WITH SEMI-RECESSED OXIDE ISOLATIONORMOND DW; GARDINER JR.1980; I.B.M. J. RES. DEVELOP.; USA; DA. 1980; VOL. 24; NO 3; PP. 353-361; BIBL. 21 REF.Article

OXIL, A VERSATILE BIPOLAR VLSI TECHNOLOGYAGRAZ GUERENA J; PANOUSIS PT; MORRIS BL et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1397-1401; BIBL. 11 REF.Article

A SUB-NANOSEC, OXIDE ISOLATED ISL TECHNOLOGYROBERTS PCT; LAMB DR; BELT R et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 28-29; BIBL. 3 REF.Article

FIRST-ORDER MODELING OF OXIDE-ISOLATED ISLLOHSTROH J; PLUTA RM.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 675-681; BIBL. 13 REF.Article

A FAST BIPOLAR 1024-BIT RAM FOR HIGH-PERFORMANCE MEMORY SYSTEMS. = MEMOIRE RAPIDE BIPOLAIRE A ACCES ALEATOIRE DE 1024 BITS POUR SYSTEMES DE MEMOIRE A HAUTES PERFORMANCESERNST H; GLOCK H; RATHBONE R et al.1977; SIEMENS FORSCH.-U.-ENTWICKL.-BER.; DTSCH.; DA. 1977; VOL. 6; NO 2; PP. 86-91; ABS. ALLEM.; BIBL. 6 REF.Article

EFFECTS OF OXIDE ISOLATION ON PROPAGATION DELAY IN INTEGRATED INJECTION LOGIC (I2L).IIZUKA T.1977; I.E.E.E. J. SOLID. STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 5; PP. 547-552; BIBL. 12 REF.Article

GET READY FOR THE NEW GENERATION OF DYNAMIC RAM'S.ABBOTT R; BARRETT C; COE J et al.1977; EVAL. ENGNG; U.S.A.; DA. 1977; VOL. 16; NO 1; PP. 32-35; BIBL. 10 REF.Article

MODERN BIPOLAR TECHNOLOGY FOR HIGH-PERFORMANCE ICS.MURRMANN H.1976; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 6; PP. 353-359; ABS. ALLEM.; BIBL. 40 REF.Article

OXIDE ISOLATION BUILDS A BETTER SCHOTTKY TTLBECHDOLT B; FERRIS D; GRIFFITH P et al.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 5; PP. 111-116Article

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