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MOS AND BIPOLAR ICS IN CONSUMER APPLICATIONS.PENNEY JD.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 379-386; (SEMINEX SEMIN., LONDON; 1974)Conference Paper

REVERSE CMOS PROCESSINGMADDOX RL.1981; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1981; VOL. 24; NO 2; PP. 128-140; 5 P.; BIBL. 15 REF.Article

NEW CMOS TECHNOLOGIESHOEFFLINGER B; ZIMMER G.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 85-139; BIBL. 2 P.Conference Paper

USING COSMOS DIGITAL IC'S.MARSTON RM.1974; RADIO ELECTRON.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 52-54Article

A DIGITAL RATEMETER FOR COMPUTER APPLICATIONS. = DEBITMETRE NUMERIQUE POUR ORDINATEURSBYRD JS.1974; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1974; VOL. 121; NO 2; PP. 397-403; BIBL. 6 REF.Article

LIMITATIONS ON THE MAXIMUM OPERATING VOLTAGE OF CMOS INTEGRATED CIRCUITS.DISHMAN JM.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 551-554; BIBL. 6 REF.Conference Paper

LADUNGSGEKOPPELTE SCHALTUNGEN IN ESFI MOS-TECHNOLOGIE.KNAUER K; POMPER M; TIHANYI J et al.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 10; PP. 356-357; ABS. ANGL.; BIBL. 7 REF.Article

USING COSMOS DIGITAL 1C'S.MARSTON RM.1974; RADIO ELECTRON.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 51-53Article

COMPLEMENTARY DMOS PROCESS FOR LSI.MASUHARA T; MULLER RS.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 453-458; BIBL. 3 REF.Article

MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSIYOUSSEF EL MANSY.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 567-573; BIBL. 26 REF.Article

MIKROCOMPUTER-FAMILIE TMS-1000 = LA FAMILLE DE MICRO-ORDINATEURS TMS-1000GOESSLER R.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 20; PP. 103-104Article

PROPERTIES OF ESFI MOS TRANSISTORS DUE TO THE FLOATING SUBSTRATE AND THE FINITE VOLUME. = LES TRANSISTORS MOS AVEC DES COUCHES DE SILICIUM EPITAXIAL SUR L'ISOLANT: PROPRIETES DUES AU SUBSTRAT FLOTTANT ET AU VOLUME FINITIHANYI J; SCHLOTTERER H.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1017-1023; BIBL. 11 REF.Article

RECENT DEVELOPMENTS IN CMOS/SOS.KAISER HW; GEHWEILER WF; STOTZ WJ et al.1973; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1973; VOL. 13; NO 9; PP. 38-46 (6P.)Article

A 6K-GATE CMOS GATE ARRAYTAGO H; KOBAYASHI T; KOBAYASHI M et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 907-912; BIBL. 7 REF.Article

LOCMOS LENDS ITSELF TO FULL SCALE INTEGRATION.BEER A.1977; NEW ELECTRON; G.B.; DA. 1977; VOL. 10; NO 3; PP. 28-32 (3P.)Article

DIE PRUEFUNG VON CMOS-BAUELEMENTEN UND- SCHALTUNGEN.HERRMAN G.1975; ELEKTRONIK; DTSCH.; DA. 1975; VOL. 24; NO 9; PP. 103-106; BIBL. 1 REF.Article

DES CIRCUITS INTEGRES A DMOS SONT PROPOSES POUR LA COMMUTATION TELEPHONIQUE.LILEN H.1975; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1975; NO 203; PP. 57-60Article

GATE-ARRAY-TECHNOLOGIE FUER HOECHSTINTEGRATION = LA TECHNOLOGIE DES RESEAUX DE PORTES POUR L'INTEGRATION A TRES GRANDE ECHELLEROHDE W.1981; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1981; NO 12; PP. 762-763; BIBL. 1 REF.Article

SCHNELLE STATISCHE RAM-BAUSTEINE = COMPOSANTS RAM STATIQUES RAPIDESCAPECE RP.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 20; PP. 39-50; BIBL. 3 REF.Article

C2L: A NEW HIGH-SPEED HIGH-DENSITY BULK CMOS TECHNOLOGY.DINGWALL AGF; STRICKER RE.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 344-349; BIBL. 8 REF.Article

QUADRUPLY SELF-ALIGNED MOS (QSA MOS). A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSIOHTA K; YAMADA K; SAITOH M et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1352-1358; BIBL. 22 REF.Article

MEMORY ARRAYS WITH C.M.O.S. R.A.M.SWILLIAMS N.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 6; PP. 36-42; (4 P.)Article

EVALUATION DE L'IMPLANTATION IONIQUE POUR LA REALISATION D'UN CAISSON DE TYPE P DANS DU SILICIUM N (C. MOS).GILLES J; GARCIA M.1975; DGRST-7470416; FR.; DA. 1975; PP. 1-30; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

CIRCUITS MONOLITHIQUES INTEGRES MOSLEUENBERGER F.1973; P.T.T. BULL. TECH.; SUISSE; DA. 1973; VOL. 51; NO 2; PP. 61-67; ABS. ALLEM. ITAL.; BIBL. 14 REF.Serial Issue

HIGH-DENSITY ONE-DEVICE DYNAMIC MOS MEMORY CELLSITOH K; SUNAMI H.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 3; PP. 127-135; BIBL. 27 REF.Article

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