Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("TECHNOLOGIE MOS COMPLEMENTAIRE")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 16528

  • Page / 662
Export

Selection :

  • and

REVERSE CMOS PROCESSINGMADDOX RL.1981; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1981; VOL. 24; NO 2; PP. 128-140; 5 P.; BIBL. 15 REF.Article

THERMAL DESIGN CONSIDERATIONS IN CMOS CIRCUITS.CERGEL L.1976; ELECTRON. ENGNG; G.B.; DA. 1976; VOL. 48; NO 578; PP. 56-57Article

C-MOS SPECIFICATIONS: DON'T TAKE THEM FOR GRANTED.WALKER R.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 1; PP. 103-107Article

BUILDING C-MOS, BIPOLAR CIRCUITS ON MONOLITHIC CHIP ENHANCES IC SPECS.SANQUINI RL.1974; ELECTRONICS; U.S.A.; DA. 1974; VOL. 47; NO 20; PP. 103-105Article

C-MOS AND COMPLEMENTARY ISOLATED BIPOLAR TRANSISTOR MONOLITHIC INTEGRATION PROCESS.DARWISH M; TOUBENEST R.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 8; PP. 1119-1122; BIBL. 9 REF.Article

NOVEL CMOS SCHMITT TRIYGERNAGARAJ K; SATYAM M.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 693-694; BIBL. 4 REF.Article

TERNARY RATE-MULTIPLIERSMOUFTAH HT; SMITH KC; VRANESIC ZG et al.1980; IEEE TRANS. COMPUT.; ISSN 0018-9340; USA; DA. 1980; VOL. 29; NO 10; PP. 929-931; BIBL. 11 REF.Article

DEVELOPMENTS IN CMOS MEMORYWATSON D.1979; MICROELECTRON. AND RELIABIL.; GBR; DA. 1979 PUBL. 1980; VOL. 19; NO 5-6; PP. 449-452Conference Paper

A TRANSIENT ANALYSIS OF LATCHUP IN BULK CMOSTROUTMAN RR; ZAPPE HP.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 170-179; BIBL. 6 REF.Article

LES CMOS VONT-ILS PROMOUVOIR LA LOGIQUE MAJORITAIRE.CHARLES F.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 214; PP. 45-49Article

SPECIAL REPORT: C-MOS ENLARGES ITS TERRITORY.ALTMAN L.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 10; PP. 77-79Article

ION IMPLANTATION FOR THRESHOLD CONTROL IN COSMOS CIRCUITS.DOUGLAS EC; DINGWALL AGF.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 6; PP. 324-331; BIBL. 15 REF.Article

MOS AND BIPOLAR ICS IN CONSUMER APPLICATIONS.PENNEY JD.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 379-386; (SEMINEX SEMIN., LONDON; 1974)Conference Paper

C-MOS, A STATUS REPORT.BISHOP A; JONES P.1974; MICROELECTRON., AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 363-372; (SEMINEX SEMIN.; LONDON; 1974)Conference Paper

DEVELOPMENT AND PRACTICAL APPLICATION OF C MOS LSI.1973; IN: REV. DEV. JAPAN AWARDED OKOCHI MEM. PRIZE 1973; TOKYO; OKOCHI MEM. FOUND.; DA. 1973; PP. 30-33Miscellaneous

BANDGAP VOLTAGE REFERENCE SOURCES IN CMOS TECHNOLOGYYE R; TSIVIDIS Y.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 24-25; BIBL. 10 REF.Article

CMOS RELIABILITY: A USEFUL CASE HISTORY TO REVISE EXTRAPOLATION EFFECTIVENESS, LENGTH AND SLOPE OF THE LEARNING CURVEBRAMBILLA P; FANTINI F; MALBERTI P et al.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 2; PP. 191-201; BIBL. 43 REF.Article

TMR CRYSTAL CONTROLLED CLOCKASRAPH ALI KS; PRATAPA REDDY VCV.1981; PROC. IEEE; ISSN 0018-9219; USA; DA. 1981; VOL. 69; NO 6; PP. 756-757; BIBL. 1 REF.Article

A DOL CMOS STATIC MEMORY CELLELMASRY MI; PETERSON LR.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 5; PP. 466-471; BIBL. 12 REF.Article

NOVEL DYNAMIC C.M.O.S. AMPLIFIER FOR SWITCHED-CAPACITOR INTEGRATORSFELSEN LB.1979; ELECTRON LETTERS; GBR; DA. 1979; VOL. 15; NO 7; PP. 532-533; BIBL. 5 REF.Article

DYNAMISCHE CMOS-TECHNIK HILFT PLATZ SPAREN. = LA TECHNIQUE CMOS DYNAMIQUE AIDE A ECONOMISER DE LA PLACEKALTHOFF M.1974; ELEKTRONIK; DTSCH.; DA. 1974; NO 7; PP. 264-265Article

LOW-SPEED ASTABLE USES CMOS1973; ELECTRON. COMPON.; G.B.; DA. 1973; VOL. 14; NO 7; PP. 294Serial Issue

CONSTRUCTION DE MICROCIRCUITS INTEGRES DE GYRATEURS A HAUTE STABILITE DES PARAMETRESGALKIN VN; SHILKOV VM.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 113-118; BIBL. 4 REF.Article

A CMOS PROCESS FOR VLSI INSTRUMENTATIONTONG QIN YI; ROBERTSON JM.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 29-32; BIBL. 5 REF.Article

DYNAMIC CMOS AMPLIFIERSHOSTICKA BJ.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 887-894; BIBL. 20 REF.Article

  • Page / 662